X-RAY STRUCTURES OF HETEROEPITAXIAL GROWTHS

异质外延生长的 X 射线结构

基本信息

批准号：
03402052
负责人：
HASHIZUME Hiroo
金额：
$ 9.92万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03402052/
关键词：
CaSrF2 EPITAXIAL CRYSTAL SUPERCONDUCTING ULTRATHIN YBCO-ANALOG CRYSTAL As-DEPOSITED SILICON SURFACE MICROROUGHNESS X-RAY DIFFRACTION TECHNIQUE SYNCHROTRON RADIATION SURFACE INTERFACE STRUCTURE GaAs(111)表面 CaSrFzエピ結晶 S処理 SrTiO3(100)表面

项目摘要

1. The structure of epitaxial CaSrF2 crystals grown on GaAs(111) substrates, as well as of their interfaces, have been fully characterized. The results have been published in Surface Science.2. The structure of growth interface of untrathin EuBaCuo and GdBaCuO epitaxial crystals on SrTiO3(001) surface have been investigated using the X-ray standing-wave technique. The experimental data show that for both EuBaCuO and GdBaCuO neither the CuO layr nor CuO2 layr can be the first grown layr on the TiO2 surface of SrTiO3 Similary, neither the BaO layr nor the rare-earth layr can be the first layr on the SrO surface. The results have been published in Physical Review.3. Grazing-angle X-ray standing experiments were performed for the first time on Asdeposited Si(111) surface under ultrahigh vacuum conditions. It has been confirmed that arsenic atoms form a bulklike surface replacing the top-layr Si atoms at the threefold positions. Evidences indicating that the As atoms occupy the high-symmetry sites with little disorder was obtained. The research has been published in Physical Review.4. Preliminary experiments were executed on Si(100) : As surface using the grazing-angle X-ray standing-wave technique.5. Microroughness of mechanochemically polished silicon surfaces has been evaluated by grazing-angle X-ray reflectivity measurements. It has been demonstrated that the technique can quantitatively determine roughnesses of 2-5 A rms without damaging the sample. An original paper was printed in J.Jpn.Appl.Phys.out of the work.

1。在GAAS（111）底物及其界面上生长的外延CASRF2晶体的结构已充分表征。结果已发表在《表面科学》中2。已经使用X射线驻波技术研究了SRTIO3（001）表面上UNTRATHIN EUBACUO和GDBACUO外延晶体的生长界面的结构。实验数据表明，对于eubacuo和gdbacuo，cuo layr和cuo2 layr都不能是SRTIO3相似的TiO2表面上的第一个生长的Layr，bao layr和稀有地面都不能是SRO表面上的第一个Layr。。结果已发表在物理评论中3。在超高真空条件下，首次在Asdeposed Si（111）表面上进行了放牧角X射线常规实验。已经证实，砷原子形成一个散装的表面，在三倍位置取代了顶层Si原子。证据表明ASAMS占据了几乎没有混乱的高对称位点。该研究已发表在物理评论中4。在SI（100）上执行初步实验：使用放牧角X射线站立技术作为表面。5。通过放牧角X射线反射率测量，已经评估了机械化学抛光的硅表面的微型度。已经证明，该技术可以定量确定2-5 A RMS的粗糙度，而不会损害样品。 J.JPN.Appl.phys.Out印刷了一张原始论文。