Studies on crystallization of functionality thin films through reaction control of metal-organic molecules

通过金属有机分子的反应控制功能薄膜的结晶研究

基本信息

批准号：
05403018
负责人：
HIRANO Shin-ichi
金额：
$ 28.67万
依托单位：
NAGOYA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1995
项目状态：
已结题

项目摘要

The current research project focuses on the crystallization of functionality thin films through reaction control of metal-organic molecules. Metal-organic precursors for thin film formation were synthesized by reaction control of various metallorganics. The structure of the precursor in solution were analyzed by various spectroscopic methods, such as IR and NMR.The crystallization behavior of precursor films were investigated. The calcination conditions were found to be an important key for promotion of the crystallization of perovskite K (Ta, Nb) O_3 film even on Pt/Si substrates. Epitaxial K (Ta, Nb) O_3 films were successfully crystallized on MgO and Pt/MgO using H_2O/O_2 vapor calcination followed by crystallization. The epitaxy of K (Ta, Nb) O_3 film on MgO and Pt/MgO substrates was confirmed by X-ray pole figure measurement. The Curie temperatures of epitaxial K (Ta, Nb) O_3 films varied with the Ta/Nb ratios, and were affected by the stress from the substrates. Epitaxial (Sr, Ba) Nb_2O_6 and (Pb, Ba) Nb_2O_6 thin films were found to crystallize on MgO substrates using the reaction control of metal-organic compounds. The relation between epitaxial (Sr, Ba) Nb_2O_6 film and MgO substrates were also explained. Highly oriented beta-BaB_2O_4 thin films were synthesized on transparent substrates. beta-BaB_2O_4 thin films were found to generate second harmonic (SH) wave on irradiation with 1064 nm light. The power relation between the fundamental and the SH wave satisfied the theory of SHG.The present project demonstrated the importance of the reaction control of metal-organic compounds for the synthesis of epitaxial functionality films, and clarified the relation between the processing conditions and the properties of the films. The new properties of the films, such as ferroelectricity and SHG,were established for the highly oriented films through reaction control of metal-organic compounds.

目前的研究项目重点是通过金属有机分子的反应控制来实现功能性薄膜的结晶。通过各种金属有机物的反应控制合成了用于薄膜形成的金属有机前体。通过红外、核磁共振等多种光谱方法分析了溶液中前驱体的结构。研究了前驱体薄膜的结晶行为。研究发现，即使在 Pt/Si 衬底上，煅烧条件也是促进钙钛矿 K (Ta, Nb) O_3 薄膜结晶的重要关键。采用H_2O/O_2气相煅烧和晶化方法,在MgO和Pt/MgO上成功外延K(Ta,Nb)O_3薄膜。通过X射线极图测量证实了K(Ta,Nb)O_3薄膜在MgO和Pt/MgO衬底上的外延生长。外延K(Ta,Nb)O_3薄膜的居里温度随Ta/Nb比的变化而变化,并受到衬底应力的影响。通过金属有机化合物的反应控制，发现外延(Sr，Ba)Nb_2O_6和(Pb，Ba)Nb_2O_6薄膜在MgO基底上结晶。还解释了外延(Sr,Ba)Nb_2O_6薄膜与MgO衬底之间的关系。在透明基底上合成了高度取向的β-BaB_2O_4薄膜。研究发现 beta-BaB_2O_4 薄膜在 1064 nm 光照射下会产生二次谐波 (SH) 波。基波与SH波之间的功率关系满足SHG理论。本项目论证了金属有机化合物的反应控制对于合成外延功能薄膜的重要性，并阐明了工艺条件与性能之间的关系的电影。通过金属有机化合物的反应控制，建立了高取向薄膜的铁电性和倍频效应等薄膜新特性。