Doping by single Ion Implantation and its application to solid state materials and devices.

单离子注入掺杂及其在固态材料和器件中的应用。

基本信息

批准号：
05101003
负责人：
OHDOMARI Iwao
金额：
$ 143.36万
依托单位：
Waeda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Specially Promoted Research
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05101003/
关键词：
Single Ion Single Ion Implantation FIB point defect material control positron annihilation ultrafine structure surface structural phase transition 物性制御

项目摘要

Development of the single ion implantation (SII) was conducted for the purpose of implanting accurate number of dopant ions one by one into ultra fine semiconductor structures. By evaluating the number of implanted ions and detection efficiency of the single ion incidence, the SII has been proven to be effective in suppressing the fluctuation in dopant number 50% less than the conventional ion implantation.Immunity of VLSIs against transient malfunction induced by single ion irradiation was investigated using single ion microprobe technique, and sensitive site in the VLSIs and mechanism of the malfunction have been identified.Damages introduction with ion irradiation and subsequent anisotropic etching have yielded Si nano-wires successfully.The enhanced gold plating was observed at the nano-modified silicon surface using SII.The temperature dependence of Schottky barrier I-V characteristics revealed that near surface damages in Si introduced by ion irradiation reduced the Schottky barrier height due to fermi level position at the metal-semiconductor interface.Ion implantation induced defects were investigated by positron annihilation technique and the relationship between their depth profile and ion species was clearly established.For the next stage intense positron beam, high efficiency positron moderators were developed together with the use of ^<60>C source. At present, the result that guarantees the thousand times high efficiency moderation was obtained.Processes of oxidation, H_2 desorption and adsorption of alkaline metals on Si surfaces have been clarified using molecular orbital calculations. Energy changes along the 7x7 formation steps and the effect of oxygen atoms was calculated.Dynamic growth steps of the DAS domains were precisely observed in-situ using high temperature STM.Isolated DAS domains nucleated or annihilated with a single stacking fault triangle as a building unit and the critical nucleus size for growth was revealed.

为了将准确数量的掺杂剂离子一一植入超细的半导体结构中，进行了单离子植入（SII）的发展。通过评估单个离子发病率的植入离子的数量和检测效率，SII已被证明可有效抑制掺杂剂数量的波动比常规离子植入小50％。使用单个离子微探针技术研究了辐射，并且已经鉴定出了vLSIS和机制中的敏感位点。通过离子辐照和随后的各向异性蚀刻引入了damages，成功地产生了Si nano-wires。 - 使用SII进行了修饰的硅表面。Schottky屏障I-V特征的温度依赖性表明，离子辐射引入的SI的近表面损害降低了由于金属 - 肺导体植入的FERMI水平位置引起的Schottky屏障高度。离子植入诱导的缺陷，由ION诱导的缺陷。正电子歼灭技术及其深度谱与离子物种之间的关系清楚地建立了。对于下一阶段的正电子束，与 ^<60> C源的使用一起开发了高效率的正电子主持人。目前，通过分子轨道计算，已经阐明了氧化，H_2解吸和碱金属上碱金属上碱金属上的氧化处理和吸附的结果。沿7x7地层步骤的能量变化和氧原子的效果被计算出来。使用高温sTm的高温DAS结构量精确地观察到DAS结构域的色素生长步骤，并用单个堆叠断层作为建筑物的单位进行了成核或消灭。并且揭示了生长的临界核大小。