Surface Modification of Silicon at the Nanometer Scale

纳米级硅表面改性

基本信息

项目摘要

In order to improve the efficiency and applicability of laser micro- and nano-strucutring of silicon, the interaction of silicon with single- and multi-pulsed radiation is comprehensively investigated by time-resolved metrology and theoretical simulations. We develop a hybrid atomistic-continuum multiscale model that combines several numerical techniques in a single mesoscopic computational approach. The model includes at least five physical phenomena: First, the MD part for describing the laser-induced transient states of matter at the atomic level. Second, the effect of laser-generated free carriers (the electron-hole pairs) accounted in continuum. Third, non-thermal phase transitions due to newly developed interatomic potential. Fourth, the effect of SPP excitation on the laser-energy deposition. And finally, the CGMD method for modeling of large volumes of matter under low excitation and smooth laser-induced phase transitions under local equilibrium conditions. Moreover, the obtained laser-induced structures constituting the final periodic patterns can be separately studied in ab-initio calculations subjects to their new optical properties. The theoretical simulations are supported by spectroscopic imaging pump-probe ellipsometry measurements, which enable the comprehensive determination of the complex refractive index upon irradiation. Therefore, the investigation of the Si surface restructuring processes and its transient optical properties can be seen as a successful implementation and interconnection of the following theoretical and experimental objectives: Theoretical objectives:1) Development of the theoretical description of the ultrashort laser-pulse interaction with semiconductors on the example with Si.2) Verification of the model predictions with the experimental measurements.3) Investigation of the role of non-thermal processes involved into the laser-induced phase transitions in Si.4) Development of the methodology of designing the experiment for functionalization of Si surface with demanded optical properties in IT-technologies.Experimental objectives:1) extend spectral range of pump probe setup into the UV.2) comprehensive investigation of transient complex refractive index n ̃(t,H,λ).3) develop optical gradient index model by complementary consideration of experiment and simulation.4) determine transient complex refractive index n ̃(t,H,λ) for multipulse irradiation for LIPSS formation.The project studies the transient state of Si as a representative of a large group of semiconductors. A number of results obtained in this project, therefore, can be extended to In, As, Ge, and other materials, highly demanded in microelectronics and nanotechnologies. The deep understanding of the laser-induced processes can result in ability of manipulation with the transient optical properties of Si and development of new generation of electronic devices at the nanoscale.
为了提高硅SED辐射的激光微观和纳米治疗的有效性,是通过时间固定的计量学和理论模拟的。在原子水平上描述物质的激光诱导的横向的MD部分。第四,spp激发对激光 - 能源沉积的影响,最后是模拟大量物质的低激发和平滑激光的cgmd方法。光谱成像泵探针椭圆测量,复杂折射的离子,可以将SI表面重组的研究和ITSical特性视为成功实施和互连以下理论目标:1) - 与SI.2)在SI.4)中涉及激光诱导的相变中的非热过程的作用的示例中的与半导体的相互作用。4)开发针对叔叔表面设计的方法学具有必需的光学特性 - 技术目标:1)将泵探针设置的特殊范围扩展到UV.2)跨性折射率的瞬态全面确定瞬态复合物折射率N ̃(t,h,λ)用于多辐射,将Si的跨性状状态与大的TOR一样大。 GE和其他材料,在微电子和纳米技术方面高度要求使用SI的瞬态光蛋白和新一代电子设备的瞬时光蛋白。

项目成果

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Professor Dr. Martin Ezequiel Garcia其他文献

Professor Dr. Martin Ezequiel Garcia的其他文献

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{{ truncateString('Professor Dr. Martin Ezequiel Garcia', 18)}}的其他基金

Ab initio description of laser-induced ultrafast phenomena in the presence of surfaces and interfaces
存在表面和界面时激光诱导超快现象的从头开始描述
  • 批准号:
    328175242
  • 财政年份:
    2016
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Unified ab initio description of the ultrafast reversible and irreversible laser-induced structural changes occurring in antimony: from coherent phonons up to nonthermal melting
锑中发生的超快可逆和不可逆激光诱导结构变化的统一从头描述:从相干声子到非热熔化
  • 批准号:
    262778930
  • 财政年份:
    2014
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Generation of deterministic nanostructures with ultrashort UV pulses under predefined interface boundary conditions: theory and experiment
在预定义的界面边界条件下使用超短紫外脉冲生成确定性纳米结构:理论和实验
  • 批准号:
    198771508
  • 财政年份:
    2012
  • 资助金额:
    --
  • 项目类别:
    Research Grants
Theoretical study of energy and charge transfer in single clusters and cluster arrays at surfaces
表面单簇和簇阵列能量和电荷转移的理论研究
  • 批准号:
    5406153
  • 财政年份:
    2003
  • 资助金额:
    --
  • 项目类别:
    Priority Programmes
Time-dependent diffraction and EXAFS during laser induced ultrashort structural changes: theory and simulations
激光诱导超短结构变化期间的时间相关衍射和 EXAFS:理论和模拟
  • 批准号:
    5373036
  • 财政年份:
    2002
  • 资助金额:
    --
  • 项目类别:
    Priority Programmes
Optically Active Silicon-Based Nanostructured III-V Compound Semiconductors (OASIS)
光学活性硅基纳米结构 III-V 化合物半导体 (OASIS)
  • 批准号:
    522061391
  • 财政年份:
  • 资助金额:
    --
  • 项目类别:
    Research Grants

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Nanoparticle Coated Microelectrode Arrays for Electrochemically Controlled Gene Editing at the Electrode Site
用于电极位点电化学控制基因编辑的纳米颗粒涂层微电极阵列
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Intracellular RNA Nanoparticle Therapeutics to Treat Retinal Neovascularization
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Novel coated nanostructured implant surfaces to increase osseointegration and decrease peri-implantitis in a physiologic rat model
新型涂层纳米结构种植体表面可增加生理大鼠模型中的骨整合并减少种植体周围炎
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