Surface Modification of Silicon at the Nanometer Scale

纳米级硅表面改性

• 批准号: 505225793
• 负责人: Professor Dr. Martin Ezequiel Garcia
• 金额: --
• 依托单位: Laserinstitut
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/505225793?language=en
• 关键词: Surface; Modification; Silicon; Nanometer; Scale

In order to improve the efficiency and applicability of laser micro- and nano-strucutring of silicon, the interaction of silicon with single- and multi-pulsed radiation is comprehensively investigated by time-resolved metrology and theoretical simulations. We develop a hybrid atomistic-continuum multiscale model that combines several numerical techniques in a single mesoscopic computational approach. The model includes at least five physical phenomena: First, the MD part for describing the laser-induced transient states of matter at the atomic level. Second, the effect of laser-generated free carriers (the electron-hole pairs) accounted in continuum. Third, non-thermal phase transitions due to newly developed interatomic potential. Fourth, the effect of SPP excitation on the laser-energy deposition. And finally, the CGMD method for modeling of large volumes of matter under low excitation and smooth laser-induced phase transitions under local equilibrium conditions. Moreover, the obtained laser-induced structures constituting the final periodic patterns can be separately studied in ab-initio calculations subjects to their new optical properties. The theoretical simulations are supported by spectroscopic imaging pump-probe ellipsometry measurements, which enable the comprehensive determination of the complex refractive index upon irradiation. Therefore, the investigation of the Si surface restructuring processes and its transient optical properties can be seen as a successful implementation and interconnection of the following theoretical and experimental objectives: Theoretical objectives:1) Development of the theoretical description of the ultrashort laser-pulse interaction with semiconductors on the example with Si.2) Verification of the model predictions with the experimental measurements.3) Investigation of the role of non-thermal processes involved into the laser-induced phase transitions in Si.4) Development of the methodology of designing the experiment for functionalization of Si surface with demanded optical properties in IT-technologies.Experimental objectives:1) extend spectral range of pump probe setup into the UV.2) comprehensive investigation of transient complex refractive index n ̃(t,H,λ).3) develop optical gradient index model by complementary consideration of experiment and simulation.4) determine transient complex refractive index n ̃(t,H,λ) for multipulse irradiation for LIPSS formation.The project studies the transient state of Si as a representative of a large group of semiconductors. A number of results obtained in this project, therefore, can be extended to In, As, Ge, and other materials, highly demanded in microelectronics and nanotechnologies. The deep understanding of the laser-induced processes can result in ability of manipulation with the transient optical properties of Si and development of new generation of electronic devices at the nanoscale.

为了提高硅的激光微型和纳米结构的效率和适用性，通过时间分辨的计量学和理论模拟，全面研究了硅与单脉冲辐射的相互作用。我们开发了一种混合原子 - 跨性多尺度模型，该模型将几种数值技术结合在单个中镜计算方法中。该模型至少包括五个物理现象：首先，是描述原子水平激光诱导的物质过渡状态的MD部分。其次，在继续解释的激光生成的自由载体（电子孔对）的影响。第三，由于新开发的原子间潜力而引起的非热相变。第四，SPP兴奋对激光 - 能量沉积的影响。最后，在局部平衡条件下，在低兴奋和平滑激光诱导的平滑激光诱导的相变的CGMD方法。此外，可以在Ab-Initio计算中分别研究构成最终周期模式的激光诱导的结构。理论模拟由光谱成像泵探针椭圆法测量支持，这可以在照射后全面确定复杂的折射率。因此，对SI表面恢复过程及其瞬时光学特性的研究可以看作是以下理论和实验目标的成功实现和互连：理论目标：1）对超平强脉冲相互作用的理论描述的发展与示例的示例相互作用。 SI.4）在IT技术中使用必要的光学特性设计实验实验实验的方法的过程中涉及激光诱导的相变的过程。经验物体：1）将泵探针设置的光谱范围扩展到UV.2中，将UV的光谱范围扩展到UV.2）通过跨度复杂的复杂折射式汇总互动式互动互动nigractient n ractex n ractex n ractex n ractect n n n n feventient n ractient n ractient n ractient n ractiratient。 4）确定瞬时复合物折射率n ̃（t，h，λ）用于嘴唇形成的辐射。因此，在该项目中获得的许多结果可以扩展到GE和其他材料，在微电子和纳米技术中高度要求。对激光诱导的过程的深入了解可能会导致操纵能力具有SI的瞬态光学特性以及在纳米级电子设备的新一代电子设备的发展。