Optically Active Silicon-Based Nanostructured III-V Compound Semiconductors (OASIS)

光学活性硅基纳米结构 III-V 化合物半导体 (OASIS)

• 批准号: 522061391
• 负责人: Professor Dr. Martin Ezequiel Garcia
• 金额: --
• 依托单位: Theoretische Physik II: Festkörper und Ultrakurzzeitphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/522061391?language=en
• 关键词: Optically; Active; Silicon; Based; Nanostructured

A novel silicon-based hybrid material system will be developed and investigated, which may have in future a huge impact for the integration of electrooptically active devices on a silicon platform. In some preliminary experiments it could be proven that a full inclusion of III-V nanoclusters in a defect-free Si single crystal matrix is possible to realize. In this project this novel class of material will be further developed by molecular beam epitaxy and investigated by morphological (XRD, AFM, FIB-SEM, TEM) and optoelectronic studies (low-T PL, reflection and excitation spectroscopy, photocurrent and CV measurements). The work will be strongly supported by theory, which includes the simulation of growth processes far away from thermal equilibrium and the calculation of bandstructures and band offsets. For the first time, by comparing theory with optical and electrical measurements, a fundamental understanding of the optical, electrical and morphological properties will be developed.

将开发和研究一种新型的基于硅的混合物质系统，这可能在将来对硅平台上电动活动设备的整合产生巨大影响。在某些初步实验中，可以证明可以在无缺陷的Si单晶基质中完全包含III-V纳米簇。在这个项目中，这种新型的材料将通过分子束外延进一步开发，并通过形态学（XRD，AFM，FIB-SEM，TEM）和光电研究（Low-T PL，反射和激发光谱，光电流和CV测量值）进行了研究。 。理论将为这项工作提供强有力的支持，其中包括模拟远离热平衡的生长过程以及频段结构和带路的计算。通过将理论与光学和电气测量进行比较，将开发对光学，电和形态学特性的基本理解。