MBE-Sputtering-system for antiferromagnetic spintronic materials

用于反铁磁自旋电子材料的 MBE 溅射系统

• 批准号: 504979810
• 金额: --
• 依托单位: Universität Regensburg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2022
• 资助国家: 德国
• 起止时间: 2021-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/504979810?language=en
• 关键词: MBE; Sputtering; system; antiferromagnetic; spintronic

Many spintronic effects, such as gaint and tunnel magnetoresistance (GMR, TMR) used in novel magnetic devices such as magnetic random access memories (RAMs) or magnetic hard disks, have been discovered in thin film systems precisely designed to have well-defined sharp interfaces and high crystalline quality using advanced film deposition techniques. The realization of such epitaxial thin films from complex material systems has often led to breathtaking discoveries of spintronic effects that allow very fast operation with only low power consumption. As a result, preparation techniques involving state-of-the-art deposition of thin films from a variety of material systems, including (semi)metals, oxide compounds, semiconductors, and superconductors, have become the focus of the spintronics research. In recent years, there has been a breakthrough in spintronics research that has revealed the possibility of using antiferromagnets (AFs) instead of ferromagnets to enable far more powerful spintronic functions. In previous magnetic devices, AFs were used only as auxiliary components because the intrinsic properties of AFs, such as negligible magnetic magnetization, do not allow manipulation of the antiferromagnetic order with moderate magnetic fields. However, it has been shown that the intrinsic symmetry properties of AFs allow extremely fast manipulation of the magnetic order and can lead to novel spintronic effects. In particular, the combined symmetries of crystal and magnetic lattices play an essential role in enabling phenomena such as spin-polarized bands in AFs without net-magnetization, the anomalous and spin Hall effects, and also G(T)MR effects. Recently, ultrafast electrical switching of antiferromagnetic order and detection of apparently identical inverted antiferromagnetic states have been demonstrated in epitaxial thin films with specific crystal and magnetic lattice symmetries. The realization of epitaxial thin films is therefore an essential element in the research of novel spin phenomena in AFs. To realize epitaxial thin films of AFs, we apply for a cluster consisting of multitarget sputtering and molecular beam epitaxy (MBE) systems. In order to cover a wide range of material systems, we aim to realize a growth facility comprising a UHV sputtering system with 8 targets, a chamber for oxides and an MBE system equipped with multiple effusion cells and an e-beam evaporator connected by a common transfer tube that allows seamless sample exchange between the different chambers within ultra-high vacuum conditions.

在新型磁性设备中使用的许多自旋效应，例如Gaint和Tunnel Magnetesistansians（GMR，TMR），例如磁随机访问记忆（RAM）或磁性硬盘，在精确设计的薄膜系统中发现了具有良好定义的锋利接口和使用高级膜的高素质质量的精确设计。从复杂的材料系统中实现这种外延薄膜通常会导致对旋转效应的惊人发现，这些效应只能在低功耗而进行非常快速的操作。结果，涉及各种材料系统的薄膜最新沉积的制备技术，包括（半）金属，氧化物化合物，半导体和超导体，已成为Spintronics研究的重点。近年来，Spintronics研究取得了突破，它揭示了使用抗铁磁铁（AFS）而不是铁磁体来实现更强大的Spintronic功能的可能性。在先前的磁性设备中，AFS仅用作辅助组件，因为AFS的固有特性（例如可忽略不计的磁磁化）不允许操纵具有中等磁场的抗磁磁性。然而，已经表明，AFS的固有对称性可以极快地操纵磁性，并可能导致新型的自旋效应。特别是，晶体和磁晶格的组合对称性在启用现象（例如AFS中的自旋偏振带，无净磁性，异常和自旋霍尔效应以及g（t）MR效应）中起着至关重要的作用。最近，在具有特定的晶体和磁性晶格对称性的外延薄膜中，已经证明了抗磁磁性的超快电交换以及明显相同倒立的抗铁磁状态的检测。因此，实现外延薄膜是AFS新型自旋现象的研究中的重要元素。为了实现AFS的外延薄膜，我们申请了一个由多白素溅射和分子束外延（MBE）系统组成的集群。为了覆盖广泛的物质系统，我们旨在实现包括具有8个目标的UHV溅射系统的增长设施，氧化物的腔室和配备了多个积液电池的MBE系统以及通过通用转移管连接的电子束蒸发器，该蒸发器允许在超高的真空状态下不同腔室之间的无接缝样品交换。