MBE-Sputtering-system for antiferromagnetic spintronic materials

用于反铁磁自旋电子材料的 MBE 溅射系统

• 批准号: 504979810
• 金额: --
• 依托单位: Universität Regensburg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2022
• 资助国家: 德国
• 起止时间: 2021-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/504979810?language=en
• 关键词: MBE; Sputtering; system; antiferromagnetic; spintronic

Many spintronic effects, such as gaint and tunnel magnetoresistance (GMR, TMR) used in novel magnetic devices such as magnetic random access memories (RAMs) or magnetic hard disks, have been discovered in thin film systems precisely designed to have well-defined sharp interfaces and high crystalline quality using advanced film deposition techniques. The realization of such epitaxial thin films from complex material systems has often led to breathtaking discoveries of spintronic effects that allow very fast operation with only low power consumption. As a result, preparation techniques involving state-of-the-art deposition of thin films from a variety of material systems, including (semi)metals, oxide compounds, semiconductors, and superconductors, have become the focus of the spintronics research. In recent years, there has been a breakthrough in spintronics research that has revealed the possibility of using antiferromagnets (AFs) instead of ferromagnets to enable far more powerful spintronic functions. In previous magnetic devices, AFs were used only as auxiliary components because the intrinsic properties of AFs, such as negligible magnetic magnetization, do not allow manipulation of the antiferromagnetic order with moderate magnetic fields. However, it has been shown that the intrinsic symmetry properties of AFs allow extremely fast manipulation of the magnetic order and can lead to novel spintronic effects. In particular, the combined symmetries of crystal and magnetic lattices play an essential role in enabling phenomena such as spin-polarized bands in AFs without net-magnetization, the anomalous and spin Hall effects, and also G(T)MR effects. Recently, ultrafast electrical switching of antiferromagnetic order and detection of apparently identical inverted antiferromagnetic states have been demonstrated in epitaxial thin films with specific crystal and magnetic lattice symmetries. The realization of epitaxial thin films is therefore an essential element in the research of novel spin phenomena in AFs. To realize epitaxial thin films of AFs, we apply for a cluster consisting of multitarget sputtering and molecular beam epitaxy (MBE) systems. In order to cover a wide range of material systems, we aim to realize a growth facility comprising a UHV sputtering system with 8 targets, a chamber for oxides and an MBE system equipped with multiple effusion cells and an e-beam evaporator connected by a common transfer tube that allows seamless sample exchange between the different chambers within ultra-high vacuum conditions.

许多自旋电子效应，例如磁性随机存取存储器 (RAM) 或磁性硬盘等新型磁性器件中使用的增益和隧道磁阻 (GMR、TMR)，已在精确设计为具有明确清晰界面的薄膜系统中被发现使用先进的薄膜沉积技术实现高结晶质量。从复杂的材料系统中实现这种外延薄膜常常会带来令人惊叹的自旋电子效应的发现，这种效应可以在低功耗的情况下实现非常快的运行。因此，涉及从各种材料系统（包括（半）金属、氧化物、半导体和超导体）沉积薄膜的最先进的制备技术已成为自旋电子学研究的焦点。近年来，自旋电子学研究取得了突破，揭示了使用反铁磁体（AF）代替铁磁体来实现更强大的自旋电子功能的可能性。在以前的磁性器件中，AF仅用作辅助组件，因为AF的固有特性（例如可忽略的磁化强度）不允许用中等磁场操纵反铁磁序。然而，研究表明，AF 的固有对称特性允许极快地操纵磁序，并可以产生新颖的自旋电子效应。特别是，晶体和磁晶格的组合对称性在实现诸如无净磁化的 AF 中的自旋极化带、反常和自旋霍尔效应以及 G(T)MR 效应等现象方面发挥着重要作用。最近，在具有特定晶体和磁晶格对称性的外延薄膜中证明了反铁磁序的超快电切换和明显相同的反铁磁态的检测。因此，外延薄膜的实现是自动对焦中新型自旋现象研究的重要组成部分。为了实现AF的外延薄膜，我们申请了由多靶溅射和分子束外延（MBE）系统组成的集群。为了覆盖广泛的材料系统，我们的目标是实现一个生长设施，包括一个带有 8 个靶材的 UHV 溅射系统、一个氧化物室和一个配备多个喷射单元的 MBE 系统以及一个通过公共连接器连接的电子束蒸发器。传输管允许在超高真空条件下不同室之间进行无缝样品交换。