Radiation resistance of Fe-Si compounds and its application

Fe-Si化合物的耐辐射性能及其应用

• 批准号: 15560731
• 负责人: YAMAGUCHI Kenji
• 金额: $ 1.98万
• 依托单位: Japan Atomic Energy Research Institute
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560731/
• 关键词: silicide; beta iron disilicide; radiation resistance; semiconductor; X-ray diffraction; radiation effect; optical properties; ion beam sputter deposition; X線回析法; 電気特性

Ion beam sputter deposition (IBSD) method was employed to modify the surface of Si surface by forming a semiconducting β-FeSi_2 layer. It was revealed that, by carefully choosing the sputter etching and thermal annealing conditions, a highly-oriented thin β-FeSi_2 film of 100 nm in thickness, with the epitaxial relationship of β-FeSi_2 100) // Si (100) can be fabricated at 973 K. Further investigation demonstrated that a highly-oriented film can be also formed at much lower temperature, i.e. at 873 K, or can be made thicker by optimizing the substrate temperature, deposited thickness of sputtered atoms and the target compositions.Cross-sectional transmission electron microscope (TEM) images showed that the interface of β-FeSi_2 / Si is atomically flat and continuous, which suggests that this silicide can be used to form heterojunction with Si substrate for device applications. In addition, the surface of silicide was found to be highly resistant to oxidation. Preliminary investigation on the irradiation effects on the silicide film using high-energy (> 100 MeV) heavy ion (Xe ion) revealed that the film became amorphous as the ion fluence was increased, and that no phase transformations could be observed. Photoluminescence measurement proved to be useful to further elucidate irradiation effects on the film and substrate, not to say the optical properties of semiconducting silicide layer.

采用离子束溅射沉积（IBSD）方法对Si表面进行表面改性，形成半导体β-FeSi_2层。结果表明，通过仔细选择溅射刻蚀和热退火条件，可以形成高度取向的薄β-FeSi_2层。厚度为100 nm的薄膜，其外延关系为β-FeSi_2 100) // Si (100)，可以在973 K下制备。进一步的研究表明，高度取向的薄膜也可以在更低的温度下形成，即 873 K，或者可以通过优化基底温度、溅射原子的沉积厚度和靶材成分来使其更厚。横截面透射电子显微镜 (TEM) 图像显示β-FeSi_2/Si的界面是原子平坦且连续的，这表明该硅化物可用于与Si衬底形成异质结用于器件应用。此外，还发现了硅化物的表面。对高能（> 100 MeV）重离子（Xe离子）照射硅化物薄膜的初步研究表明，随着离子注量的增加，薄膜变成非晶态，并且没有相变。光致发光测量被证明有助于进一步阐明辐照对薄膜和基底的影响，更不用说半导体硅化物的光学特性了。层。

项目成果

部家彰, 他: "IBSD法による次世代半導体材料(β-FeSi_2膜)の開発"石川県工業試験場研究報告. 52. 9-12 (2003)

Akira Beke等人：“利用IBSD法开发下一代半导体材料（β-FeSi_2薄膜）”石川县工业研究所研究报告52. 9-12（2003年）。

Sputter etching of Si substrate to synthesize highly oriented β-FeSi_2 films

Si衬底溅射刻蚀合成高取向β-FeSi_2薄膜

• 发表时间: 2003
• 期刊: Transactions of Materials Research Society of Japan 28(4)
• 作者: Y.Inui;N.Ito;T.Nakajima;A.Urata;S.Igarashi et al.
• 通讯作者: S.Igarashi et al.

Effect of target compositions on the crystallinity of β-FeSi_2 prepared by ion beam sputter deposition method

靶材成分对离子束溅射沉积法制备β-FeSi_2结晶度的影响

• 发表时间: 2004
• 期刊: Thin Solid Films 461
• 作者: Tsuyoshi Misawa;Hironobu Unesaki;K.Yamaguchi et al.;K.Yamaguchi et al.
• 通讯作者: K.Yamaguchi et al.

Effect of surface treatment of Si substrate on the crystal structure of FeSi_2 thin film formed by ion beam sputter deposition method

Si衬底表面处理对离子束溅射沉积法形成FeSi_2薄膜晶体结构的影响

• 发表时间: 2004
• 期刊: Vacuum 74
• 作者: 乾 義尚;松前友広;西浦 健;S.Igarashi et al.
• 通讯作者: S.Igarashi et al.

Nanoscopic observation of structural and compositional changes for β-FeSi_2 thin film formation processes

β-FeSi_2薄膜形成过程结构和成分变化的纳米观察

• 发表时间: 2004
• 期刊: Thin Solid Films 461
• 作者: Tsuyoshi Misawa;Hironobu Unesaki;K.Yamaguchi et al.;K.Yamaguchi et al.;K.Shimura et al.;H.Yamamoto et al.
• 通讯作者: H.Yamamoto et al.