Radiation resistance of Fe-Si compounds and its application

Fe-Si化合物的耐辐射性能及其应用

基本信息

批准号：
15560731
负责人：
YAMAGUCHI Kenji
金额：
$ 1.98万
依托单位：
Japan Atomic Energy Research Institute
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560731/
关键词：
silicide beta iron disilicide radiation resistance semiconductor X-ray diffraction radiation effect optical properties ion beam sputter deposition X線回析法電気特性

项目摘要

Ion beam sputter deposition (IBSD) method was employed to modify the surface of Si surface by forming a semiconducting β-FeSi_2 layer. It was revealed that, by carefully choosing the sputter etching and thermal annealing conditions, a highly-oriented thin β-FeSi_2 film of 100 nm in thickness, with the epitaxial relationship of β-FeSi_2 100) // Si (100) can be fabricated at 973 K. Further investigation demonstrated that a highly-oriented film can be also formed at much lower temperature, i.e. at 873 K, or can be made thicker by optimizing the substrate temperature, deposited thickness of sputtered atoms and the target compositions.Cross-sectional transmission electron microscope (TEM) images showed that the interface of β-FeSi_2 / Si is atomically flat and continuous, which suggests that this silicide can be used to form heterojunction with Si substrate for device applications. In addition, the surface of silicide was found to be highly resistant to oxidation. Preliminary investigation on the irradiation effects on the silicide film using high-energy (> 100 MeV) heavy ion (Xe ion) revealed that the film became amorphous as the ion fluence was increased, and that no phase transformations could be observed. Photoluminescence measurement proved to be useful to further elucidate irradiation effects on the film and substrate, not to say the optical properties of semiconducting silicide layer.

通过形成半导体的β-FESI_2层，进行了离子束溅射（IBSD）方法以修饰Si表面的表面。据透露，通过仔细选择厚度为100 nm的高度取向的薄薄β-FESI_2膜，厚度为100 nm，β-FESI_2 100）// Si（100）的外在关系可以在973 k中制造。通过优化底物温度，溅射原子的沉积厚度和目标组成厚度。口气透射电子显微镜（TEM）图像表明，β-fesi_2 / si的界面在原子上是平坦且连续的，这表明该硅酸盐可用于与SI si si sisstrate用于设备应用的杂音。另外，发现硅酸盐表面对氧化具有高度抗性。对使用高能量（> 100 MEV）重离子（XE离子）对辐射膜的辐照作用的初步研究表明，随着离子的增加，该膜变得无定形，并且无法观察到相变的相变。事实证明，光致发光的测量对于进一步阐明对膜和底物的辐照作用很有用，而不是说半导体有机硅层的光学特性。