Physical Properties of Endohedral Metallo fullerenes at solid, thin film and nano-scale.

固体、薄膜和纳米尺度内嵌金属富勒烯的物理性质。

• 批准号: 15350089
• 负责人: KUBOZONO Yoshihiro
• 金额: $ 8.45万
• 依托单位: OKAYAMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15350089/
• 关键词: Endohedral Metallofullerenes; Solid State Physics; Thin-film Devices; Nanostructure; Scanning Tunneling Microscope; Single Molecule Manipulation; 結晶構造; 電界効果トランジスター; ナノスケール; STM; ナノデバイス

The structures and electronic properties of endohedral metallofullerenes and higher fullerenes have been studied at solid, thin-film and nanometer scale. The crystal structures of M@C_<82>(Dy,Ce and Pr) and C_<82> have been determined to be simple cubic (Pa3) by Rietveld refinements for X-ray diffraction patterns with synchrotron radiation. The first-order structural phase transition was observed for the crystals of M@C_<82> around 150 K. Furthermore, Rb_<8.8(7)>C_<84> was prepared by doping Rb metal into the crystals of C_<84>, and the X-ray diffraction pattern showed the simple cubic structure of Pa3. The temperature-dependent ESR spectra suggested a metallic behavior for Rb_<8.8(7)>C_<84>.The resistivity and optical absorption spectra for M@C_<82>,C_<82> and C_<84> showed that these compound are not metals but normal semiconductors with small gap. The gap estimated from resistivity was 1/2 of the optical gap. Therefore the gap estimated from resistivity was concluded to be mobility … More gap. The thin-film field-effect transistors (FETs) have been fabricated with M@C_<82>,C_<82>,C_<84> and C_<88>. These FETs showed n-channel normally-on FET properties. The field-effect mobility of C_<88> FET reached to 〜10^<-2> cm^2 V^<-1> s^<-1>, whose value was the second highest value among the fullerene FETs. The normally-on properties for endohedral metallofullerens and higher fullerenes originate from high bulk current which flow in all region of thin films.The scanning tunneling microscope(STM) showed clear images of local structures of M@C_<82> inclusive of internal structures. The growth of M@C_<82> on well-defined Si(111)-(7 x 7) surfaces has been fully studied by the STM, and the Stranski-Krastanov type growth was found for M@C_<82>. The M@C_<82> molecules in the first layer are strongly bound on the Si surface through the chemical bond between C atoms and dangling bonds of Si adatoms. The M@C_<82> molecules above the first layer aggregate by van der Waals force between molecules. The close-packed structures of M@C_<82> have been formed by annealing the Si substrates covered with multilayer of M@C_<82> at 200℃.The removals and movements of C_<60> molecules in the close-packed layer of C_<60> have been achieved at single molecular precision by field evaporation with the STM tip. The pin-point shooting from the STM tip enables ones to draw nano-scale characters, pictures and patterns consisting of molecular size voids. Because of technical simplicity, the free controllability, and 1 nm size of voids, this technique is widely applicable to nanoscale manufacture. Thus much information of the structures and physical properties of endohedral metallofullerens and higher fullerenes has been obtained, and the applications towards thin-film FET devices and molecular electronics have been tried based on the obtained information. Less

内he骨和较高富勒烯的结构和电子特性已在实心，薄膜和纳米尺度上进行了研究。 M@C_ <82>（DY，CE和PR）和C_ <82>的晶体结构已通过Rietveld改进确定为简单的立方体（PA3），用于具有同步辐射的X射线衍射模式。对于M@C_ <82>的晶体观察到了一阶结构相变。此外，通过将RB金属掺入C_ <84>的晶体中，RB_ <8.8（7）> c_ <84>制备了X射线衍射模式。与温度有关的ESR光谱提出了RB_ <8.8（7）> C_ <84>的金属行为。M@C_ <82>，C_ <82>和C_ <84>的抗性和光学滥用光谱表明，这些化合物不是金属，但没有小差距。从抗性估计的间隙为光学间隙的1/2。因此，从抗性中估计的差距得出的差距是流动性……更多的差距。薄膜场效应晶体管（FET）已用M@C_ <82>，C_ <82>，C_ <84>和C_ <88>制造。这些FET显示出正常的N通道特性。 C_ <88> FET的现场效应迁移率达到〜10^<-2> cm^2 v^<-1> s^<-1>，其值是富勒烯FET中的第二高值。内he骨金属菌和较高富勒烯的正常特性源自薄膜所有区域中流动的高体积电流。扫描隧道显微镜（STM）显示了M@C_ <82>内部结构的局部结构的清晰图像。 M@C_ <82>在定义良好的SI（111） - （7 x 7）表面上的生长已经通过STM进行了完全研究，并且发现了M@C_ <82>的Stranski-Krastanov型增长。第一层中的M@C_ <82>分子通过汽车和Si Adatoms的悬挂键之间的化学键在Si表面上强烈结合。 M@C_ <82>分子在分子之间通过范德华力汇总的分子。 M@C_ <82>的紧密包装结构是通过将M@C_ <82>的多层覆盖的SI底物归化而成。从STM尖端拍摄的针点射击使人们能够绘制由分子大小空隙组成的纳米级角色，图片和图案。由于技术简单，自由可控性和1 nm的空隙尺寸，该技术广泛适用于纳米级制造。已经获得了内he骨金属的结构和物理性质的大量信息，并且已经获得了较高的富勒烯，并且根据获得的信息，已经尝试了对薄膜FET设备和分子电子设备的应用。较少的

项目成果

Electronic properties for the C_<2V>, and C_S isomers of Pr@C_<82> studied by Raman, resistivity, and scanning tunnering microscopy/spectroscopy

通过拉曼、电阻率和扫描调谐显微镜/光谱研究 Pr@C_<82> 的 C_<2V> 和 C_S 异构体的电子特性

• 发表时间: 2004
• 期刊: Chem.Phys.Lett. 395
• 作者: T.Hosokawa;S.Fujiki;E.Kuwahara;Y.Kubozono;H.Kitagawa;A.Fujiwara;T.Takenobu;Y.Iwasa
• 通讯作者: Y.Iwasa

Y.Kubozono et al.: "Structure and transport properties of isomer-separated C_<82>"Physical Review B. (in press). (2004)

Y.Kubozono 等人：“异构体分离的 C_<82> 的结构和传输特性”Physical Review B.（出版中）。

Structural and electronic Haracterizations of two isomers of Ce@C_<82>

Ce@C_<82> 两种异构体的结构和电子表征

• 发表时间: 2004
• 期刊: J.Phys.Chem.B 108
• 作者: Y.Rikiishi;Y.Kubozono;T.Hosokawa;K.Shibata;Y.Haruyama;Y.Takabayashi;A.Fujiwara;S.Kobayashi;S.Mori;Y.Iwasa
• 通讯作者: Y.Iwasa

S.Fujiki, Y.Kubozono et al.: "Scanning tunneling microscopy of Dy@C_<82> and Dy@C_<60> adsorbed on Si(111)-(7x7) surfaces"Physical Review B. 69. 045415-1-045415-5 (2004)

S.Fujiki、Y.Kubozono 等人：“吸附在 Si(111)-(7x7) 表面上的 Dy@C_<82> 和 Dy@C_<60> 的扫描隧道显微镜”Physical Review B. 69. 045415-1

Structures and transport properties of isomer-separated C_<82>

异构体分离的C_<82>的结构和传输性质

• 发表时间: 2004
• 期刊: Physical Review B 69
• 作者: T.Furuta;H.Takeuchi;M.Isozaki;Y.Takahashi;M.Sugimoto;M.Kanehara;T.Watanabe;K.Noguchi;T.M.Dore;M.Iwamura;R.Y.Tsien;Y.Kubozono(他5名)
• 通讯作者: Y.Kubozono(他5名)