Gallium Nitride Single Crystal Growth by Flux Method

助熔剂法生长氮化镓单晶

基本信息

批准号：
12555175
负责人：
SHIMADA Masahiko
金额：
$ 8.45万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

Colorless transparent platelet single crystals with a maximum area of 10.0 X 5.0mm^2 by 0.03-0.1 mm thick was obtained at 750℃, 5Mpa of N2 for 360h and 0.60 of Na/(Ga+Ns)mole ratio (γ_<Na>). At 800℃, 3MPa of N_2 for 250h and γ_<Na>=0.60, colorless transparent prismatic crystals having a size of 1.0x0.5x0.5 mm^3 were obtained. Prismatic single crystals with 1.0xO.5x0.5 mm3 size were also obtained at 750℃, 5MPa of N_2 for 450h and γ_<Na>=0.54. The morphology of GaN single crystals tended to change from platelet to prismatic with increasing growth temperature, decreasing N_2 pressure and decreasing γ_<Na>.The fill width at half-maximum (FWHM) of the rocking curve measured for O004 X-ray diffraction peak was 25 arcsec, for 1 mm size platelet crystals and 32 arcsec, for 3 mm size platelet crystals. Hall measurements were carried out by the van der Pauw technique for the platelet crystals having a size of 1x1x0.2 mm^3. The concentration of free electrons in the crystal was 1-2x10^<18>cm-^3 and the mobility was 100 cm^2V-^1S-^1 at room temperature. The electrical conductivity was about 25 Ω-1cm-1 and almost independent of temperature between 120 and 350 K. The near band-edge emission of GaN was observed at 365 nm (3.4eV) by CL spectroscopy. No bands or peaks except the peak from the near band emission were observed. These results indicate the high quality of the GaN single crystals synthesized in this study.

最大面积为10.0 x 5.0mm^2 x 0.03-0.1 mm厚的无色透明血小板单晶体，在750℃，5MPa的N2为360h，Na/（ga+ns）摩尔比（γ__<na>）的0.03-0.1 mm厚。在800℃，N_2的3MPA为250H和γ_<Na> = 0.60，获得了1.0x0.5x0.5 mm^3的无色透明棱镜晶体。还在750℃，N_2的5MPa为450h和γ_<a> = 0.54处获得了1.0xo.5x0.5 mm3的棱柱单晶。 The morphology of GaN single crystals tended to change from platelet to prismatic with increasing growth temperature, decreasing N_2 pressure and decreasing γ_<Na>.The fill width at half-maximum (FWHM) of the rocking curve measured for O004 X-ray diffraction peak was 25 arcsec, for 1 mm size platelet crystals and 32 arcsec, for 3 mm size platelet crystals.通过Van der Pauw技术对具有1x1x0.2 mm^3的血小板晶体进行了测量。晶体中游离电子的浓度为1-2x10^<18> cm-^3，在室温下，迁移率为100 cm^2v-^1s-^1。电导率约为25Ω-1cm-1，几乎与120至350 K之间的温度无关。通过CL光谱观察到在365 nm（3.4EV）处观察到GAN的近带边缘发射。除了近近带发射的峰外，没有带或峰。这些结果表明本研究中合成的GAN单晶的高质量。