FABRICATION OF MULTI-WAVELENGTH LIGHT SOURCES

多波长光源的制造

• 批准号: 12450028
• 负责人: KOYAMA Fumio
• 金额: $ 9.92万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450028/
• 关键词: SEMICONDUCTOR LASER; SURFACE EMITTING LASER; OPTICAL DATA STORAGE; OPTICAL NEAR FIELD; 光メモリ

An ultra-high density optical memory using optical near field is attracting much interest for future Tera byte optical data storage. Various optical near field sources have been reported. A common important issue of near field optical sources is to realize high output power density for recording data. Goto proposed a Tera byte optical memory system using a vertical cavity surface emitting laser (VCSEL) array. This optical memory system is based on an optical head consisting of a two-dimensional VCSEL array with low total power consumption.We have proposed a micro-aperture vertical cavity surface emitting laser (VCSEL) for use in near field optical data storage. We carried out the near-field analysis of micro-aperture VCSEL using 2-dimensional finite element method. We calculated the distribution of optical near field generated near a micro-aperture, and showed that the spot size is potentially smaller than 100 nm, which is less than wavelength by a factor of 8. We fabricated a VCSEL loaded by a Au film on the top surface for blocking the emitting light and formed a sub-wavelength size aperture using focused ion beam (FIB) etch through this film. Single mode operation was obtained for a micro-aperture VCSEL with 3 μm square active region. The differential quantum efficiency was increased by a factor of 3 in comparison with that before forming a 400 nm square aperture. We estimated the power density of light radiated from a 400 nm square aperture to be 0.17 mW/ m2. In addition, we measured the near field distribution of a 200 nm square VCSEL by using a scanning near field microscope.In addition, We propose the use of a micro-aperture surface emitting laser (VCSEL) for near-field optical probing. We present the first demonstration of two-dimensional imaging by using the voltage change signal from a micro-aperture VCSEL induced by the interaction with a probe.

使用光学近场的超高密度光学存储器正在引起人们对未来太字节光学数据存储的极大兴趣。已经报道了各种光学近场光源的一个常见的重要问题是实现用于记录的高输出功率密度。 Goto提出了一种使用垂直腔表面发射激光器（VCSEL）阵列的Tera字节光学存储系统，该光学存储系统基于由总功耗较低的二维VCSEL阵列组成的光学头。微孔径垂直用于近场光学数据存储的腔表面发射激光器（VCSEL）我们使用二维有限元方法对微孔径VCSEL进行了近场分析，计算了微孔径附近产生的光学近场分布。孔径，并表明光斑尺寸可能小于 100 nm，这比波长小 8 倍。我们制造了一个 VCSEL，在顶面上加载有 Au 薄膜以阻挡发射光，并形成了一个使用聚焦离子束 (FIB) 蚀刻穿过该薄膜，获得了具有 3 μm 方形有源区域的微孔径 VCSEL 的单模操作，与此相比，微分量子效率提高了 3 倍。在形成 400 nm 方形孔径之前，我们估计从 400 nm 方形孔径辐射的光功率密度为 0.17 mW/ m2。此外，我们还测量了近场。使用扫描近场显微镜观察 200 nm 方形 VCSEL 的分布。此外，我们建议使用微孔径表面发射激光器 (VCSEL) 进行近场光学探测。我们首次展示了二维成像。通过使用由与探针相互作用引起的微孔径 VCSEL 产生的电压变化信号。

项目成果

S.Shinada, F.Koyama, N.Nishiyama, M.Arai, K.Iga: "Analysis and fabrication of micro-aperture GaAs/GaAIAs surface emitting laser for near field optical data storage"IEEE J. Select. Top. Quantum Electron. Vol.7, no.2. 365-370 (2001)

S.Shinada、F.Koyama、N.Nishiyama、M.Arai、K.Iga：“用于近场光学数据存储的微孔径 GaAs/GaAIAs 表面发射激光器的分析和制造”IEEE J. Select。

M.Arai, N.Nishiyama, M.Azuchi, S.Shinada, A.Matsutani, F.Koyama, K.Iga: "GalnAs/GaAs single mode vertical cavity surface emitting laser (VCSEL) array on GaAs (311)B"Trans. IEICE. vol.E84-C, no.3. 331-338 (2001)

M.Arai、N.Nishiyama、M.Azuchi、S.Shinada、A.Matsutani、F.Koyama、K.Iga：“GaAs (311)B 上的 GalnAs/GaAs 单模垂直腔表面发射激光器 (VCSEL) 阵列”

武内健一郎,松谷晃宏,小山二三夫,伊賀健一: "GaAs/GaAlAs系面発光レーザにおけるAlAs選択酸化プロセスの改良と単一モード発振特性"電子情報通信学会論文誌. J83-C.9. 904-907 (2000)

Kenichiro Takeuchi、Akihiro Matsutani、Fumio Koyama、Kenichi Iga：“GaAs/GaAlAs 表面发射激光器中 AlAs 选择性氧化过程和单模振荡特性的改进”IEICE Transactions J83-C.9 (2000)。

武内 健一郎, 松谷 晃宏, 小山 二三夫, 伊賀 健一: "GaAs/GaAlAs系面発光レーザにおけるAlAs選択酸化プロセスの改良と単一モード発振特性"電子情報通信学会論文誌. vol.J83-C, no.9. 904-907 (2000)

Kenichiro Takeuchi、Akihiro Matsutani、Fumio Koyama、Kenichi Iga：“GaAs/GaAlAs 表面发射激光器中 AlAs 选择性氧化过程和单模振荡特性的改进” IEICE Transactions，第 J83-C 卷，第 9 .904-907 号（ 2000)

品田 聡, 小山 一夫, 西山 伸彦, 荒井 昌和: "微小共振器面発光レーザによる近接場光生成"電子情報通信学会論文誌. vol.J83-C, no.9. 826-833 (2000)

Satoshi Shinada、Kazuo Koyama、Nobuhiko Nishiyama、Masakazu Arai：“微腔表面发射激光器产生近场光”IEICE Transactions vol.J83-C，第 9 期（2000 年）。