MULTI-WAVELENGTH SURFACE EMITTING LASER ARRAY

多波长表面发射激光阵列

基本信息

批准号：
07555013
负责人：
KOYAMA Fumio
金额：
$ 4.48万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555013/
关键词：
OPTICAL COMMUNICATIONS SEMICONDUCTOR LASERS OPTICAL INTERCONNECTS

项目摘要

Massively integrated parallel optical devices are becoming important for use in future parallel optical fiber communication systems, optical interconnects, parallel optical recording and so on. Vertical cavity surface emitting lasers (VCSELs) have been attracting much interest for optical interconnects as well as for hihg speed parallel optical data links because of their low threshold and ease in optical coupling to fibers. A 2-D array configuration will increase the connection density in optical interconnects. In addition, if multi-wavelength VCSEL arrays are available for wavelength division multiplexing (WDM) interconnects, functionalities such as wavelength routing can be expected. A potential application of VCSELs for WDM systems is multi-wavelength laser arrays.The lasing wavelength of VCSELs is determined primarily by the length, the equivalent refractive index and the lateral size of the cavity. Among them, the lasing wavelength predominantly depends on the cavity length. For … More example, a 1% variation of layr thickness over a wafer produces a fairly large wavelength change of 10nm at a nominal wavelength of 1mum. If we are able to locally control the layr thickness, we can form multi-wavelength 2-D arrays as well as compensate for the nonuniformity of the lasing wavelength across the wafer. A nonplanar MBE growth is proposed as a way of local control of layr thickness for multi-wavelength VCSEL arrays.In this work, we present a novel technique of on-wafer wavelength control of VCSELs using nonplanar metalorganic chemical vapor deposition (MOCVD). The fabrication process is the same as that of standard VCSELs except that the substrates are patterned prior to the growth. Multi-wavelength VCSEL arrays can be fabricated by changing the size of the circular pattern. Low threshold 3*3 multi-wavelength VCSEL arrays were demonstrated by using this technique. The proposed method might be useful to realize muti-wavelength VCSEL arrays with an extremely large wavelength span. Also, we will be able to compensate for the wavelength nonuniformity of VCSELs across a large wafer by using this technique. Less

大规模集成的并行光学设备对于将来的平行光纤通信系统，光学互连，并行的光学记录等都变得很重要。垂直空腔表面发射激光器（VCSEL）引起了光学互连以及HIHG速度并行光学数据链路的引起极大的兴趣，因为它们的阈值较低，并且在光学偶联到纤维中的阈值且易于宽松。 2-D阵列配置将增加光学互连中的连接密度。此外，如果多波长VCSEL阵列可用于波长跨度多路复用（WDM）互连，则可以预期诸如波长路由之类的功能。 VCSELS在WDM系统中的潜在应用是多波长激光阵列。VCSELS的激光波长由长度，等效折射率和腔的侧向大小确定。其中，激光波长主要取决于空腔长度。例如，更大的例子，在摇摇欲坠上的Layr厚度的1％变化会在1MUM的标称波长下产生相当大的波长变化。如果我们能够在局部控制Layr厚度，则可以形成多波长的2D阵列，并补偿整个Wawver上激光波长的不均匀性。提出了非平面MBE生长作为多波长VCSEL阵列的局部控制Layr厚度的一种方式。在这项工作中，我们提出了一种使用非平面金属有机化学化学蒸气解码（MOCVD）的新技术对VCSEL的磁力波长控制。制造过程与标准VCSEL的工艺相同，只是在增长之前对底物进行了图案。可以通过更改圆形图案的大小来制造多波长VCSEL阵列。低阈值3*3多波长VCSEL阵列通过使用此技术证明。提出的方法可能有助于实现具有极大波长跨度的相互波长VCSEL阵列。此外，我们将能够通过使用此技术来补偿大型摇动的VCSEL的波长不均匀性。较少的