MULTI-WAVELENGTH SURFACE EMITTING LASER ARRAY

多波长表面发射激光阵列

基本信息

批准号：
07555013
负责人：
KOYAMA Fumio
金额：
$ 4.48万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555013/
关键词：
OPTICAL COMMUNICATIONS SEMICONDUCTOR LASERS OPTICAL INTERCONNECTS

项目摘要

Massively integrated parallel optical devices are becoming important for use in future parallel optical fiber communication systems, optical interconnects, parallel optical recording and so on. Vertical cavity surface emitting lasers (VCSELs) have been attracting much interest for optical interconnects as well as for hihg speed parallel optical data links because of their low threshold and ease in optical coupling to fibers. A 2-D array configuration will increase the connection density in optical interconnects. In addition, if multi-wavelength VCSEL arrays are available for wavelength division multiplexing (WDM) interconnects, functionalities such as wavelength routing can be expected. A potential application of VCSELs for WDM systems is multi-wavelength laser arrays.The lasing wavelength of VCSELs is determined primarily by the length, the equivalent refractive index and the lateral size of the cavity. Among them, the lasing wavelength predominantly depends on the cavity length. For … More example, a 1% variation of layr thickness over a wafer produces a fairly large wavelength change of 10nm at a nominal wavelength of 1mum. If we are able to locally control the layr thickness, we can form multi-wavelength 2-D arrays as well as compensate for the nonuniformity of the lasing wavelength across the wafer. A nonplanar MBE growth is proposed as a way of local control of layr thickness for multi-wavelength VCSEL arrays.In this work, we present a novel technique of on-wafer wavelength control of VCSELs using nonplanar metalorganic chemical vapor deposition (MOCVD). The fabrication process is the same as that of standard VCSELs except that the substrates are patterned prior to the growth. Multi-wavelength VCSEL arrays can be fabricated by changing the size of the circular pattern. Low threshold 3*3 multi-wavelength VCSEL arrays were demonstrated by using this technique. The proposed method might be useful to realize muti-wavelength VCSEL arrays with an extremely large wavelength span. Also, we will be able to compensate for the wavelength nonuniformity of VCSELs across a large wafer by using this technique. Less

大规模集成并行光学器件对于未来并行光纤通信系统、光学互连、并行光学记录等的使用变得越来越重要，垂直腔表面发射激光器（VCSEL）已经引起了光学互连和高速的广泛关注。并行光学数据链路由于其低阈值且易于与光纤进行光学耦合，因此，如果多波长 VCSEL 阵列可用于波分，则二维阵列配置将增加光学互连的连接密度。 VCSEL 在 WDM 系统中的潜在应用是多波长激光阵列。VCSEL 的激光波长主要由长度、等效折射率和横向尺寸决定。其中，激光波长主要取决于腔长度，例如，晶圆上 1% 的层厚度变化会产生相当大的波长变化。 1μm 标称波长下的 10nm 如果我们能够局部控制层厚度，我们可以形成多波长二维阵列并补偿整个晶圆上激光波长的不均匀性。作为多波长 VCSEL 阵列层厚度局部控制的一种方式。在这项工作中，我们提出了一种使用非平面 VCSEL 晶圆上波长控制的新技术金属有机化学气相沉积 (MOCVD) 的制造工艺与标准 VCSEL 相同，只是在生长之前对基板进行图案化，可以通过改变圆形图案的尺寸来制造 3。 *3 通过使用该技术演示了多波长 VCSEL 阵列，所提出的方法可能有助于实现具有极大波长跨度的多波长 VCSEL 阵列。通过使用这种技术，可以减少大晶圆上 VCSEL 的波长不均匀性。