HIGH SPEED MODULATIONS BY USING POLARIZATION SWITCHING OF MICROCAVITY SURFACE EMITTING LASERS

使用微腔表面发射激光器的偏振切换进行高速调制

基本信息

批准号：
08455034
负责人：
KOYAMA Fumio
金额：
$ 4.86万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455034/
关键词：
OPTICAL COMMUNICATIONS SEMICONDUCTOR LASERS OPTICAL INTERCONNECTS 半導体レーザ高速変調

项目摘要

Massively integrated parallel optical devices are becoming important for use in future parallel optical fiber communication systems, optical interconnects, parallel optical recording and so on. Vertical cavity surface emitting lasers (VCSELs) have been attracting much interest for optical interconnects as well as for high speed parallel optical data links becouse of their low threshold and ease in optical coupling to fibers. The purpose of this study is to develop a novel technique of high speed modulation by using polarization switching of microcavity surface emitting lasers. The highlight of our results are in the following.1) We achieved the first demonstration of polarization control of VCSELs by using non- (100) substrates. Sub-milliamperes low threshold VCSELs grown on (311) A or (311) B substrates by either MOCVD or MBE were realized. The devices shows stable polarization operation with extinction ratio over 30dB under DC and high speed operations.2) We carried out the estimation of polarization selectivity of (311) -substrate VCSELs. Numerical simulation and experimental evaluation were carried out.3) We realized high speed operation of polarization controlled VCSELs beyond 10Gb/s.4) We fabricated and characterized quanrum wire structures by using the growth on patterned substrates. A few tens nm wide quantum wire structures were formed. The structure shows the anisotropy of PL characteristics, showing a potential of polarization control in VCSELs.5) We proposed a novel modulation scheme by using polarization switching in VCSELs with a potential of high speed modulation over 10Gb/s.

大规模集成并行光学器件在未来并行光纤通信系统、光学互连、并行光学记录等领域的应用变得越来越重要。垂直腔表面发射激光器（VCSEL）因其低阈值和易于与光纤光耦合而引起了光学互连以及高速并行光学数据链路的极大兴趣。本研究的目的是开发一种利用微腔表面发射激光器偏振切换的高速调制新技术。我们的成果亮点如下：1) 我们首次通过使用非 (100) 基板实现了 VCSEL 偏振控制的演示。通过 MOCVD 或 MBE 在 (311) A 或 (311) B 基板上生长亚毫安级低阈值 VCSEL。该器件在直流和高速运行下表现出稳定的偏振运行，消光比超过30dB。2)我们对(311)衬底VCSEL的偏振选择性进行了估计。进行了数值模拟和实验评估。3）我们实现了超过10Gb/s的偏振控制VCSEL的高速运行。4）我们利用图案化基板上的生长技术制造并表征了量子线结构。形成了几十纳米宽的量子线结构。该结构显示了PL特性的各向异性，显示了VCSEL中偏振控制的潜力。5)我们提出了一种在VCSEL中使用偏振切换的新颖调制方案，具有超过10Gb/s的高速调制潜力。