Fabrication of Nano-Structual DLC/Si film Using Electrostatic Microparticle-Impact-Deposition

采用静电微粒冲击沉积法制备纳米结构 DLC/Si 薄膜

• 批准号: 14350388
• 负责人: IDE Takashi
• 金额: $ 3.65万
• 依托单位: Ehime University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350388/
• 关键词: Diamond-like Carbon Film; Ultra-fine Particle; Diamond-Like Carbon Film; Electrostatic Acceleration; Hydrogen Plasma Etching; Hopping Conduction; Magnetron Sputtering; Fabrication of Thin Film; シリコン複合化DLC膜; ナノスケール混合組織; 機能性材料; 静電加速

Studies on fabricating a new nano・structual mixture film of diamond-like carbon (DLC) and silicon are done by making the mixture of ultra fine particles of carbon(C) and silicon(Si) collide with substrate, using electrostatic acceleration of the mixed particles between parallel electrodes maintained at dc high voltage, in a high vacuum or in low-pressure hydrogen gas. Furthermore, improving of the growth efficiency and the electronic structural characteristic of the film are investigated by using hydrogen plasma etchings with assistant use of magnetic field and high frequency electric field. Consequently, the following results are obtained :(1)For the mixture film growth and dc conduction characteristic, 1)the rate of Si content in the formed film is increased in proportion to the rate of Si mixture of starting particles though a upper limit of Si content of about 20% exists. 2)The dc conduction occurs through the channel of DLC, and the resistively increases depending on the rate of Si content. 3)The DLC in the film changes slightly into graphitic structure when the rate of Si content increased.(2)On the assistant effect of magnetic field (MS) and high-frequency electric field (RF), 1)when the assistant fields are used, the rate of film growth is increased in comparison with that of only dc field applied. However, when the MS and RF fields are used together, the growth rate is decreased a little. These results suggest that the hydrogen plasma contributes to the adhesion of particles and the material etching through the film growth process. 2) For the hopping-conduction property of the film, the resistivity and its temperature coefficient increase according to MS<RF-MS by the activity of plasma etching. This suggests that the density of localized state near Fermi level is decreased due to decrease of dangling bonds in DLC, corresponding with the result mentioned in (2)-1).

使用BON（C）和硅（Si）与底物碰撞的钻石样碳（DLC）和硅的新纳米 /结构混合物膜进行的研究，使用在高电压保持在高压电极之间的混合颗粒的静电加速，在高压氢气中，通过使用助理磁场和高频电场来研究膜的电子结构特征，并获得以下结果：1）尽管存在约20％的Sitent的auper限制，但形成的膜中的Si含量与起始颗粒的Si混合速率成正比。薄膜中的DLC略微变为石墨结构，SI含量的速率（2）使用了磁场助手（MS）和高频电场（RF），1）磁场，膜的增长率为与Onle DC场相比，当MS和R型均加在一起时，生长速率稍微降低了通过ASMA蚀刻的活性，膜的跳跃效果，电阻率和温度系数为MS <RF-MS。结果在（2）-1中）。