Fabrication of Nano-Structual DLC/Si film Using Electrostatic Microparticle-Impact-Deposition

采用静电微粒冲击沉积法制备纳米结构 DLC/Si 薄膜

• 批准号: 14350388
• 负责人: IDE Takashi
• 金额: $ 3.65万
• 依托单位: Ehime University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350388/
• 关键词: Diamond-like Carbon Film; Ultra-fine Particle; Diamond-Like Carbon Film; Electrostatic Acceleration; Hydrogen Plasma Etching; Hopping Conduction; Magnetron Sputtering; Fabrication of Thin Film; シリコン複合化DLC膜; ナノスケール混合組織; 機能性材料; 静電加速; Diamond-like Carbon Film; Ultra-fine Particle; Diamond-Like Carbon Film; Electrostatic Acceleration; Hydrogen Plasma Etching; Hopping Conduction; Magnetron Sputtering; Fabrication of Thin Film; シリコン複合化DLC膜; ナノスケール混合組織; 機能性材料; 静電加速

Studies on fabricating a new nano・structual mixture film of diamond-like carbon (DLC) and silicon are done by making the mixture of ultra fine particles of carbon(C) and silicon(Si) collide with substrate, using electrostatic acceleration of the mixed particles between parallel electrodes maintained at dc high voltage, in a high vacuum or in low-pressure hydrogen gas. Furthermore, improving of the growth efficiency and the electronic structural characteristic of the film are investigated by using hydrogen plasma etchings with assistant use of magnetic field and high frequency electric field. Consequently, the following results are obtained :(1)For the mixture film growth and dc conduction characteristic, 1)the rate of Si content in the formed film is increased in proportion to the rate of Si mixture of starting particles though a upper limit of Si content of about 20% exists. 2)The dc conduction occurs through the channel of DLC, and the resistively increases depending on the rate of Si content. 3)The DLC in the film changes slightly into graphitic structure when the rate of Si content increased.(2)On the assistant effect of magnetic field (MS) and high-frequency electric field (RF), 1)when the assistant fields are used, the rate of film growth is increased in comparison with that of only dc field applied. However, when the MS and RF fields are used together, the growth rate is decreased a little. These results suggest that the hydrogen plasma contributes to the adhesion of particles and the material etching through the film growth process. 2) For the hopping-conduction property of the film, the resistivity and its temperature coefficient increase according to MS<RF-MS by the activity of plasma etching. This suggests that the density of localized state near Fermi level is decreased due to decrease of dangling bonds in DLC, corresponding with the result mentioned in (2)-1).

关于制造钻石样碳（DLC）和硅的新纳米结构混合物膜的研究是通过使碳（C）和硅（SI）的混合物使用在DC高伏特的dc高伏特式的高压燃料中维护的混合电极的静电加速度来完成的。此外，通过使用助手使用磁场和高频电场来研究膜的生长效率和电子结构特征的提高和电子结构特征。因此，获得以下结果：（1）对于混合物膜的生长和直流传导特征，1）形成膜中的Si含量速率与启动颗粒的Si混合速率成比例增加，尽管SI含量的上限约为20％。 2）直流传导通过DLC的通道发生，并且根据SI含量的速率始终增加。 3）当Si含量的速率增加时，膜中的DLC略有变化为图形结构。（2）磁场（MS）和高频电场（RF）的助手效应（RF），1）当使用助理场时，与仅应用DC场相比，膜增长率的增加。但是，当将MS和RF场一起使用时，这些结果的增长率表明氢血浆有助于颗粒的粘附以及通过膜生长过程蚀刻的材料。 2）对于膜的跳跃性能，通过血浆蚀刻的活性，耐药性及其温度系数会根据MS <RF-MS升高。这表明，由于DLC中悬挂键的降低，费米水平接近费米水平的局部状态的密度降低，与（2）-1中提到的结果相对应。