Turn on control of high power semiconductor devices by laser probing technique

通过激光探测技术开启高功率半导体器件的控制

基本信息

批准号：
11450108
负责人：
YASUOKA Koichi
金额：
$ 9.66万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450108/
关键词：
power device infrared-laser probe fast turn-on carrier distribution PiN diode device simulator レーザプローブ

项目摘要

A Measuring system has been developed for measuring the excess carrier density in high-power devices by using a laser-probing technique. This system enabled us to obtain high-speed and precise special information about the carrier distribution during the turn-on stage and also to compare the experimental data with the simulation results. Following results are obtained.First, the required performance of the system was estimated for measuring the semiconductor device of several hundreds-μm thicknesses. By ray-tracing of the probe beam of l.55μm wavelength and using of fast response equipments, the time and special resolution of this system reached to 5.1ns and 35μm, respectively.In the second, the photo-excited carrier density formed in a silicon wafer irradiated by a YAG laser was shown to be 10^<18>cm^<-3> within 50ns. The PiN diode excited by pulsed voltage showed the concave shape of carrier density. These data were supported by the calculation results of 2D simulation code.In the third, the research of photo-triggered switch was advanced with the on state in irradiating PiN diode of the reversely biased condition with a pulse YAG laser light. The fast switching of 50ns was obtained at the reverse voltage of 35V and 6.0mJ output of YAG laser. The uniformly formed excess carrier of about 10^<18>cm^<-3> was observed.These obtained results of transient carrier distributions within a PiN diode that was excited optically or electrically showed the effectiveness of this evaluating and controlling system for high power devices in pulsed power operations.

已经开发了一种测量系统，用于使用激光期权技术测量高功率设备中的过量载流子密度。该系统使我们能够在上阶段获得有关载体分布的高速和精确的特殊信息，并将实验数据与仿真结果进行比较。首先，估计系统的所需性能用于测量数百μm厚度的半导体装置。通过对L.55μm波长的探头梁的射线追踪以及使用快速响应设备的使用，该系统的时间和特殊分辨率分别达到5.1ns和35μm。第二，在第二个硅脂肪中形成的光激发载体密度在yag激光器辐照的硅摇动中，显示为10^<18> cm^<-3> 50n。脉冲电压激发的销二极管显示了载体密度的凹形。这些数据得到了2D模拟代码的计算结果支持。在第三次，通过脉冲YAG激光光的相反偏置条件的辐照销二极管，对光触发的开关进行了研究。在YAG激光器的35V和6.0MJ输出的反向电压下，获得了50NS的快速切换。观察到了大约10^<18> cm^<-3>的均匀形成的超过载体。这些在销钉二极管中获得的瞬态载体分布的结果是光学上激发的，该结果是在光学上激发的，或者电到电动显示了脉冲功率操作中高功率设备的评估和控制系统的有效性。