Turn on control of high power semiconductor devices by laser probing technique

通过激光探测技术开启高功率半导体器件的控制

基本信息

批准号：
11450108
负责人：
YASUOKA Koichi
金额：
$ 9.66万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450108/
关键词：
power device infrared-laser probe fast turn-on carrier distribution PiN diode device simulator レーザプローブ

项目摘要

A Measuring system has been developed for measuring the excess carrier density in high-power devices by using a laser-probing technique. This system enabled us to obtain high-speed and precise special information about the carrier distribution during the turn-on stage and also to compare the experimental data with the simulation results. Following results are obtained.First, the required performance of the system was estimated for measuring the semiconductor device of several hundreds-μm thicknesses. By ray-tracing of the probe beam of l.55μm wavelength and using of fast response equipments, the time and special resolution of this system reached to 5.1ns and 35μm, respectively.In the second, the photo-excited carrier density formed in a silicon wafer irradiated by a YAG laser was shown to be 10^<18>cm^<-3> within 50ns. The PiN diode excited by pulsed voltage showed the concave shape of carrier density. These data were supported by the calculation results of 2D simulation code.In the third, the research of photo-triggered switch was advanced with the on state in irradiating PiN diode of the reversely biased condition with a pulse YAG laser light. The fast switching of 50ns was obtained at the reverse voltage of 35V and 6.0mJ output of YAG laser. The uniformly formed excess carrier of about 10^<18>cm^<-3> was observed.These obtained results of transient carrier distributions within a PiN diode that was excited optically or electrically showed the effectiveness of this evaluating and controlling system for high power devices in pulsed power operations.

我们开发了一种测量系统，用于通过使用激光探测技术来测量高功率器件中的过剩载流子密度，该系统使我们能够获得有关导通阶段和载流子分布的高速且精确的特殊信息。将实验数据与仿真结果进行比较，得到以下结果。首先，通过对波长为l.55μm的探测光束进行射线追踪，估算了测量数百μm厚度的半导体器件所需的系统性能。并利用快速响应设备上，该系统的时间和分辨率分别达到了5.1ns和35μm。第二，在YAG激光器照射的硅片上形成的光激发载流子密度为10^<18>cm^ <-3>在50ns内，脉冲电压激发的PiN二极管显示出载流子密度的凹形。这些数据得到了2D仿真代码的计算结果的支持。以脉冲YAG激光照射反向偏置条件下的PiN二极管，在导通状态下进行了光触发开关的研究，在反向电压35V、YAG激光器输出6.0mJ的条件下，获得了50ns的快速开关。观察到均匀形成的约10^<18>cm^-3>的过量载流子。这些获得了光学或电激发的PiN二极管内瞬态载流子分布的结果展示了该评估和控制系统对于脉冲功率操作中高功率器件的有效性。