Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs

高击穿和高功率 GaN HEMT 的制造和表征

• 批准号: 15206040
• 负责人: MIZUTANI Takashi
• 金额: $ 32.53万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206040/
• 关键词: GaN HEMT; breakdown voltage; MISHEMT; current DLTS; Si_3N_4; HfO_2; inclined gate recess; gate leakage current; 電子速度; 傾斜リセス構造; ノーマリオフ型; フッ素プラズマ処理; MBE; DLTS; 深い準位; GaN MISHEM; 電流コラプス; 高誘電率膜; KFM; 電位測定; GaN MISHEMT

We have studied the fabrication and characterization of GaN HEMT to realize the high-breakdown and high-power GaN HEMTs. The main results we have obtained are as follows.1. It has been clarified that the off-state breakdown voltage is dominated by the electrons injected from the gate electrode.2. The gate leakage current which affects the breakdown voltage could be decreased in the GaN MISHEMTs with Si_3N_4 gate insulator.3. The off-state breakdown voltage of the GaN MISHEMTs has been increased from 70-80 V of the conventional GaN HEMTs to 160-200 V.4. The current collapse which is one of the dominant factors to decrease the output power of the conventional GaN HEMTs was suppressed in the MISHEMTs.5. It has been demonstrated that the drain current DLTS is effective in studying the transient behavior of the GaN HEMTs. It has also been clarified, using this technique, that the positive peak originating the surface states has been suppressed in the MISHEMTs.6. The issue of small transconductance of the Si_3N_4 MISHEMTs has been solved by using HfO_2 with high dielectric constant as a gate insulator.7. The inclined gate recess structure has been proposed to improve the high-speed performance of the HEMTs. It has been shown that the proposed structure is effective in improving the device performance based on the device simulation and on the device fabrication.

我们研究了 GaN HEMT 的制造和表征，以实现高击穿和高功率 GaN HEMT。主要研究结果如下： 1．已经阐明，断态击穿电压主要由栅电极注入的电子决定。2．具有Si_3N_4栅极绝缘体的GaN MISHEMTs可以降低影响击穿电压的栅极漏电流。 3． GaN MISHEMT 的断态击穿电压已从传统 GaN HEMT 的 70-80 V 提高到 160-200 V。4。电流崩塌是降低传统 GaN HEMT 输出功率的主要因素之一，而 MISHEMT 则抑制了电流崩塌。5。事实证明，漏极电流 DLTS 对于研究 GaN HEMT 的瞬态行为是有效的。还表明，使用该技术，源自表面态的正峰已在 MISHEMT 中被抑制。6。采用高介电常数HfO_2作为栅极绝缘体，解决了Si_3N_4 MISHEMTs跨导小的问题。7．倾斜栅凹槽结构被提出来提高HEMT的高速性能。基于器件仿真和器件制造，结果表明所提出的结构可有效提高器件性能。

项目成果

電界効果トランジスタ

场效应晶体管

• 发表时间: 2008

Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS

通过漏极电流 DLTS 观察到 AlGaN/GaN MIS-HEMT 中的电子陷阱

• 发表时间: 2004
• 期刊: Inst.Phys.Conf.Ser. No 184:Section 4
• 作者: T.Okino;Y.Ohno;S.Kishimoto;K.Maezawa;J.Osaka;T.Mizutani
• 通讯作者: T.Mizutani

T, Mizutani, H.Makihara, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa: "Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistars"Jpn.J.Appl.Phys.. vol.42. 424-425 (2003)

T、水谷、H.Makihara、M.Akita、Y.Ohno、S.Kishimoto、K.Maezawa：“AlGaN/GaN 高电子迁移率晶体管的频率色散测量”Jpn.J.Appl.Phys.. vol.42

電界効果トランジスタ、および電界効果トランジスタの作製方法

场效应晶体管及其制造方法

• 发表时间: 2003

Deep levels in n-type AlGaN grown by hydride vapour phase epitaxy on sapphire characterized by deep level transient spectroscopy

通过深能级瞬态光谱表征蓝宝石上氢化物气相外延生长的 n 型 AlGaN 的深能级

• 发表时间: 2005
• 期刊: Appl.Phys.Lett. Vol.87
• 作者: J.Osaka;Y.Ohno;S.Kishimoto;K.Maezawa;T.Mizutani
• 通讯作者: T.Mizutani