Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs

高击穿和高功率 GaN HEMT 的制造和表征

• 批准号: 15206040
• 负责人: MIZUTANI Takashi
• 金额: $ 32.53万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206040/
• 关键词: GaN HEMT; breakdown voltage; MISHEMT; current DLTS; Si_3N_4; HfO_2; inclined gate recess; gate leakage current; 電子速度; 傾斜リセス構造; ノーマリオフ型; フッ素プラズマ処理; MBE; DLTS; 深い準位; GaN MISHEM; 電流コラプス; 高誘電率膜; KFM; 電位測定; GaN MISHEMT

We have studied the fabrication and characterization of GaN HEMT to realize the high-breakdown and high-power GaN HEMTs. The main results we have obtained are as follows.1. It has been clarified that the off-state breakdown voltage is dominated by the electrons injected from the gate electrode.2. The gate leakage current which affects the breakdown voltage could be decreased in the GaN MISHEMTs with Si_3N_4 gate insulator.3. The off-state breakdown voltage of the GaN MISHEMTs has been increased from 70-80 V of the conventional GaN HEMTs to 160-200 V.4. The current collapse which is one of the dominant factors to decrease the output power of the conventional GaN HEMTs was suppressed in the MISHEMTs.5. It has been demonstrated that the drain current DLTS is effective in studying the transient behavior of the GaN HEMTs. It has also been clarified, using this technique, that the positive peak originating the surface states has been suppressed in the MISHEMTs.6. The issue of small transconductance of the Si_3N_4 MISHEMTs has been solved by using HfO_2 with high dielectric constant as a gate insulator.7. The inclined gate recess structure has been proposed to improve the high-speed performance of the HEMTs. It has been shown that the proposed structure is effective in improving the device performance based on the device simulation and on the device fabrication.

我们已经研究了甘恩·汉特（Gan Hemt）的制造和表征，以实现高破损和高功率甘恩（Gan Hemts）。我们获得的主要结果如下1。已经澄清的是，现状故障电压由从栅极电极注入的电子支配。2。在使用SI_3N_4 GATE绝缘体的GAN Mishemt中，可能会降低影响故障电压的门泄漏电流。3。 GAN MISHEMTS的外部故障电压已从常规Gan Hemts的70-80 V增加到160-200 v.4。当前的崩溃是降低常规gan hemts输出功率的主要因素之一。已经证明，漏极电流DLT有效研究gan hemts的瞬时行为。也已经使用这种技术阐明了源性表面状态的正峰在Mishemts.6中被抑制。6。 SI_3N_4 Mishemts的小型跨导率的问题已通过使用高介电常数作为栅极绝缘体的HFO_2解决了。7。已经提出了倾斜的门凹结构来改善HEMT的高速性能。已经表明，提出的结构可有效根据设备模拟和设备制造改善设备性能。

项目成果

電界効果トランジスタ

场效应晶体管

• 发表时间: 2008

Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS

通过漏极电流 DLTS 观察到 AlGaN/GaN MIS-HEMT 中的电子陷阱

• 发表时间: 2004
• 期刊: Inst.Phys.Conf.Ser. No 184:Section 4
• 作者: T.Okino;Y.Ohno;S.Kishimoto;K.Maezawa;J.Osaka;T.Mizutani
• 通讯作者: T.Mizutani

T, Mizutani, H.Makihara, M.Akita, Y.Ohno, S.Kishimoto, K.Maezawa: "Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistars"Jpn.J.Appl.Phys.. vol.42. 424-425 (2003)

T、水谷、H.Makihara、M.Akita、Y.Ohno、S.Kishimoto、K.Maezawa：“AlGaN/GaN 高电子迁移率晶体管的频率色散测量”Jpn.J.Appl.Phys.. vol.42

電界効果トランジスタ、および電界効果トランジスタの作製方法

场效应晶体管及其制造方法

• 发表时间: 2003

Deep levels in n-type AlGaN grown by hydride vapour phase epitaxy on sapphire characterized by deep level transient spectroscopy

通过深能级瞬态光谱表征蓝宝石上氢化物气相外延生长的 n 型 AlGaN 的深能级

• 发表时间: 2005
• 期刊: Appl.Phys.Lett. Vol.87
• 作者: J.Osaka;Y.Ohno;S.Kishimoto;K.Maezawa;T.Mizutani
• 通讯作者: T.Mizutani