CMOS-compatible RRAM-based structures for the implementation of Physical Unclonable Functions (PUF) and True Random Number Generators (TRNG)

基于 CMOS 兼容 RRAM 的结构，用于实现物理不可克隆函数 (PUF) 和真随机数生成器 (TRNG)

• 批准号: 439700144
• 负责人: Professor Dr.-Ing. Thomas Mussenbrock
• 金额: --
• 依托单位: Lehrstuhl für Angewandte Elektrodynamik und Plasmatechnik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/439700144?language=en
• 关键词: CMOS; compatible; RRAM; based; structures

Physical Unclonable Functions (PUF) and True Random Number Generators (TRNG) are two components widely used nowadays to generate random bit streams in security applications. The huge increase in the last decade in the use of portable consumer electronics has revealed the security in wireless communications as one of the most important requirements to be fulfilled in microelectronics technology. Therefore, it is of great interest to develop an implementation of these components which accomplishes the following characteristics: low-power operation, high-integration density, and compatibility with CMOS processes. Following the “More than Moore” approach (Increase of the performance adding functionality) such characteristics can be achieved. For instance, Resistive Random Access Memories (RRAM) have emerged in the last years as promising candidates in the field of Non-Volatile Memories (NVM). Moreover, the mechanisms behind switching operations in RRAM devices are intrinsically stochastic. Therefore, RRAM technology has started recently to be considered as a suitable solution to implement the future PUF and TRNG components. The study proposed in this project involves interdisciplinary research in order to achieve three main targets:1. Studying in detail the statistical distributions of the electrical parameters involved in RRAM switching, which have been typically used as a source of randomness.2. Figuring out how the correlations which avoid the true randomness emerge from fundamental physical and chemical processes.3. Development of an appropriate operative algorithm able to overcome the correlations found on the electrical parameters of RRAM devices providing the true random digital outputs required for both TRNG and PUF applications. In order to understand why the electrical characteristics of RRAM devices are intrinsically stochastic but not true random, a complete materials study and electrical characterization will be performed with these devices. The RRAM-based structures required for this characterization will be fabricated by starting from the well-known TiN/HfO2/Ti/TiN structure. The fabrication parameters will be modified to assess their influence in the randomness. To link electrical characteristics to physical and chemical atomic interactions, a complementary approach is required: the simulation of atomistic models. Finally, the statistical analysis will be crucial to guide the design of the operative algorithm for the implementation of PUF aa well as TRNG.

物理不可克隆函数 (PUF) 和真随机数生成器 (TRNG) 是当今安全应用中广泛用于生成随机比特流的两个组件，过去十年便携式消费电子产品使用的巨大增长揭示了无线通信的安全性。作为微电子技术要满足的最重要的要求之一，因此，开发具有以下特性的这些组件的实现非常有意义：低功耗操作、高集成密度以及与 CMOS 的兼容性。遵循“超越摩尔”方法（提高性能和功能）可以实现这些特性，例如，电阻随机存取存储器（RRAM）在过去几年中已成为非易失性领域的有希望的候选者。此外，RRAM 器件中的开关操作机制本质上是随机的，因此 RRAM 技术最近开始被视为实现本研究中提出的未来 PUF 和 TRNG 组件的合适解决方案。该项目涉及跨学科研究，以实现三个主要目标： 1. 详细研究 RRAM 开关所涉及的电气参数的统计分布，这些参数通常被用作随机性来源。 2．真正的随机性来自基本的物理和化学过程。3. 开发适当的操作算法，能够克服 RRAM 器件电气参数上的相关性，提供 TRNG 和 PUF 应用所需的真正随机数字输出。的电气特性RRAM 器件本质上是随机的，但不是真正的随机，将使用这些器件进行完整的材料研究和电气表征，将从众所周知的 TiN/HfO2/Ti/TiN 开始制造此表征所需的基于 RRAM 的结构。结构的制造参数将被修改以评估它们对随机性的影响，为了将电特性与物理和化学原子相互作用联系起来，需要一种补充方法：原子模型的模拟对于指导。设计用于实现 PUF aa 和 TRNG 的操作算法。