CMOS-compatible RRAM-based structures for the implementation of Physical Unclonable Functions (PUF) and True Random Number Generators (TRNG)

基于 CMOS 兼容 RRAM 的结构，用于实现物理不可克隆函数 (PUF) 和真随机数生成器 (TRNG)

• 批准号: 439700144
• 负责人: Professor Dr.-Ing. Thomas Mussenbrock
• 金额: --
• 依托单位: Lehrstuhl für Angewandte Elektrodynamik und Plasmatechnik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/439700144?language=en
• 关键词: CMOS; compatible; RRAM; based; structures

Physical Unclonable Functions (PUF) and True Random Number Generators (TRNG) are two components widely used nowadays to generate random bit streams in security applications. The huge increase in the last decade in the use of portable consumer electronics has revealed the security in wireless communications as one of the most important requirements to be fulfilled in microelectronics technology. Therefore, it is of great interest to develop an implementation of these components which accomplishes the following characteristics: low-power operation, high-integration density, and compatibility with CMOS processes. Following the “More than Moore” approach (Increase of the performance adding functionality) such characteristics can be achieved. For instance, Resistive Random Access Memories (RRAM) have emerged in the last years as promising candidates in the field of Non-Volatile Memories (NVM). Moreover, the mechanisms behind switching operations in RRAM devices are intrinsically stochastic. Therefore, RRAM technology has started recently to be considered as a suitable solution to implement the future PUF and TRNG components. The study proposed in this project involves interdisciplinary research in order to achieve three main targets:1. Studying in detail the statistical distributions of the electrical parameters involved in RRAM switching, which have been typically used as a source of randomness.2. Figuring out how the correlations which avoid the true randomness emerge from fundamental physical and chemical processes.3. Development of an appropriate operative algorithm able to overcome the correlations found on the electrical parameters of RRAM devices providing the true random digital outputs required for both TRNG and PUF applications. In order to understand why the electrical characteristics of RRAM devices are intrinsically stochastic but not true random, a complete materials study and electrical characterization will be performed with these devices. The RRAM-based structures required for this characterization will be fabricated by starting from the well-known TiN/HfO2/Ti/TiN structure. The fabrication parameters will be modified to assess their influence in the randomness. To link electrical characteristics to physical and chemical atomic interactions, a complementary approach is required: the simulation of atomistic models. Finally, the statistical analysis will be crucial to guide the design of the operative algorithm for the implementation of PUF aa well as TRNG.

当今，物理上无统治的功能（PUF）和真实的随机数生成器（TRNG）是当今广泛使用的两个组件，用于在安全应用程序中生成随机位流。在过去十年中，使用便携式消费电子产品的巨大增长揭示了无线通信的安全性是微电子技术中最重要的要求之一。因此，开发这些组件的实施是极大的兴趣，这些组件实现了以下特征：低功率操作，高融合密度和与CMOS过程的兼容性。遵循“超过摩尔”的方法（增加性能添加功能）可以实现此类特征。例如，正如非易失性记忆（NVM）领域的候选人所承诺的那样，在过去几年中出现了抵抗性随机访问记忆（RRAM）。此外，RRAM设备中切换操作的背后机制本质上是随机的。因此，最近开始将RRAM技术视为实施未来PUF和TRNG组件的合适解决方案。该项目提出的研究涉及跨学科研究，以实现三个主要目标：1。详细研究RRAM切换所涉及的电参数的统计分布，这些参数通常用作随机性的来源。2。弄清楚相关性在本质上是随机的，但不是真正的随机性来自基本的物理和化学过程。3。开发适当的操作算法，能够克服在RRAM设备的电气参数上发现的相关性，从而提供了TRNG和PUF应用所需的真正随机数字输出。为了理解为什么RRAM设备的电气特性本质上是随机的，但不是真正的随机性，将使用这些设备进行完整的材料研究和电气表征。该表征所需的基于RRAM的结构将通过从众所周知的TIN/HFO2/Ti/TIN结构开始制造。将修改制造参数以评估其在随机性中的影响。为了将电特征与物理和化学原子相互作用联系起来，需要一种完整的方法：原子模型的模拟。最后，统计分析对于指导操作算法的设计至关重要，以实现PUF AA及其TRNG。