Hetero MIS Structure Using Ultra High Mobility Semiconductor

使用超高迁移率半导体的异质 MIS 结构

• 批准号: 62460118
• 负责人: MATSUMURA M.
• 金额: $ 4.93万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-62460118/
• 关键词: MIS Transistor; Hetero Junction; Indium Antimonide; Cadmium Telluride; Surface States; MOCVD; MBE; MIS Capacitor; ヘテロ構造; MBE成長; カドミウム・テルル; 水銀・カドミウム・テルル; MOCVDインジウムアンチモン; MIS構造ヘテロエピタキシャル成長; 水銀テルル; エピタキシャル成長; MIS構造; 超高速MISトランジスタ

Aim of this work is to demonstrate an usefulness of Indium Antimonide (InSb) for semiconductor materials in the 21 century, when reduction of device size, the dominant motive force of the present improvement in integrated circuits, will loss its advantage due to various size effects.We have pointed out the Cadmium Telluride (CdTe)/InSb hetero structure can be considered as MIS structure at 77K, since they have the same lattice constant and energy gap of CdTe is as wide as 1.6eV while that of InSb as 0.23eV at 77K. The band diagram of the CdTe/InSb hetero structure at 77K is very similar to that of the SiO_2/Si system at room temperature if we normalized them by thermal energy.We have grown CdTe on InSb by vacuum MOCVD method. DET was cracked at 670ﾟC just at the inlet of the reactor, while DMCd gas was used as the Cd source. Single crystal CdTe was grown at substrate temperatures as low as 250ﾟC. This hetero structure has been confirmed, by C-V measurement, to operate as MIS structure at 77K.MBE method has be used for growing better CdTe/InSb hetero structure. Single crystal CdTe films have been grown at substrate temperatures between 207 and 243ﾟC with smooth surface. This hetero structure showed good MIS characteristics. It was found that the best substrate temperature is about 240ﾟC.InSb MIS transistors using MBE grown CdTe/InSb hetero structure have been fabricated, for the first time, and it was operated successfully. The field effect mobility was 1200cm^2/Vs. The performance will be improved drastically by adding an MBE grown InSb buffer layer between the substeate and CdTe.

这项工作的目的是证明21世纪对半导体材料的有用性，当设备尺寸的降低时，当前综合电路的当前改善的主要动力将失去其优势，这将由于各种尺寸效果而失去优势。 CDTE的宽度为1.6EV，而INSB的宽度为77K时为0.23EV。如果我们通过热能使它们归一化，则在77K处的CDTE/INSB异质结构在室温下与SIO_2/SI系统的带图非常相似。我们通过真空MOCVD方法在INSB上生长了CDTE。仅在反应器的入口处将DET在670°C处开裂，而DMCD气体则被用作CD源。单晶CDTE在底物温度低至250°C下生长。通过C-V测量，已确认了该杂项结构，以在77K时以MIS结构的作用。单晶CDTE膜在底物温度下生长在207至243 c的底物温度下，表面光滑。这种异质结构显示出良好的错误特征。通过在供应和CDTE之间添加MBE种植的INSB缓冲层，将大大提高性能。

项目成果

Osamu Sugiura: Applied Physics Letters. 51. 1515-1516 (1987)

杉浦修：应用物理快报。

Kazushige Shiina: Applied Physics Letters. 52. (1988)

椎名一重：应用物理快报。

K.Shiina,他: "“Electrical Proper-ties of CdTe/InSb Hetero Metal-Insulator-Semiconductor" Appl.Phys.Lett.,. 52. 1306-1307 (1988)

K. Shiina 等人：“CdTe/InSb 异质金属绝缘体半导体的电气特性”Appl.Phys.Lett., 52. 1306-1307 (1988)

S.Oda 他: "Heteroepitaxial Growth of HgTe on InSb at 200℃ by metalorganic Chemical vapor Deposition Using Diterarybutyltelludirde" Journal of Applied Physics. 65. 1808-1809 (1989)

S.Oda 等人：“200℃ 通过金属有机化学气相沉积在 InSb 上异质外延生长”应用物理学杂志 65. 1808-1809 (1989)

Osamu Sugiura: Journal of Electronic Materials. 17. 15-19 (1988)

杉浦修：《电子材料杂志》。