CAREER: SiC High-Frequency High-Voltage Power Converters with Partial-Discharge Mitigation and Electromagnetic Noise Containment

职业：具有局部放电缓解和电磁噪声抑制功能的 SiC 高频高压电源转换器

• 批准号: 2143488
• 负责人: Dong Dong
• 金额: $ 50万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-03-01 至 2027-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2143488&HistoricalAwards=false
• 关键词: CAREER; SiC; Frequency; Voltage; Power

The fast penetration of electric vehicles (EV), energy storage devices, distributed renewable energy resources put many challenges on the state-of-art ac power grid. Medium-voltage (MV) to high-voltage (HV) dc power network is considered as a promising solution to enable high-efficient, high-reliable, and low-carbon-emission energy transmission and delivery. High-density power electronic systems which can provide MV/HV output are very critical to enabling such MV/HV dc network. However, the existing system still suffers the bulky volume, heavy weight, and low reliability. This NSF CAREER project aims to address several fundamental challenges and bring transformative solutions and technologies to improve the power-density of MV and HV power converters with over an order of magnitude. This will be achieved by use of MV and HV wide-band-gap power semiconductor devices and multiple miniaturized system integration solution and tools. The intellectual merits of the project include many new scientific knowledge of driving and protecting HV wide-band-gap power semiconductor switching unit, comprehensive design tools of HV insulation system for high-frequency power electronics, physics and numerical-based models for predicting partial-discharge (PD) behaviors. The broader impacts of the project include help drive the fast adoption of MV and HV high-frequency high-density power conversion by bridging the industry knowledge gaps for emerging applications and drive the energy eco-system toward zero-carbon emissions and promote the US dominance in wide-band-gap power semiconductor industry and gain the market leadership. To enable the order-of-magnitude power density improvement of MV/HV power converters, this proposal identifies three critical areas and scientific gaps as the starting point for the PI’s long-term career: 1) Characterization, modeling, and investigation of a comprehensive real-time dynamic voltage balancing approach for stacking SiC semiconductors to enable a MV/HV high-speed “super-switch” as the basic building block for MV/HV converters. 2) Investigation of solid dielectric system and electric-field (E-field) shaping design methodologies for internal/external PD-free high-density power electronics integration; 3) Investigation of MV conductive EMI noise containment and EMI filter design. In the program, comprehensive real-time digital dynamic voltage balancing solutions for MV SiC MOSFETs in series will be explored. Characterization and design tools of HV converter integration considering E-field stress Management and PD mitigation will be developed. In the end, HV planar EMI filter with HV feed-through connector for high-frequency converter with integrated EM shielding solution will be developed. The proposed program will collaborate with the researchers with the expertise on power device physics, solid and gaseous dielectric materials and HV insulation, and EMI to create fundamental cross-domain knowledge, design tools, innovative solutions, and education materials.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

电动汽车（EV）、储能装置、分布式可再生能源的快速普及给最先进的交流电网（MV）到高压（HV）直流电网带来了许多挑战。作为一种有前景的解决方案，可实现高效、高可靠和低碳排放的能源传输和输送。能够提供中压/高压输出的高密度电力电子系统对于实现此类中压/高压直流网络至关重要。然而，现有系统仍然存在体积大、重量重和可靠性低的问题。这个 NSF CAREER 项目旨在解决几个基本挑战，并带来变革性的解决方案和技术，以将中压和高压电源转换器的功率密度提高一个数量级。这将通过使用中压和高压宽带隙功率半导体器件以及多种小型化系统集成解决方案和工具来实现，该项目的智力优点包括许多驱动和保护高压宽带隙功率的新科学知识。该项目的更广泛影响包括帮助推动中压和高压的快速采用。高频高密度功率转换通过弥合新兴应用的行业知识差距，推动能源生态系统走向零碳排放，并促进美国在宽带隙功率半导体行业的主导地位并获得市场领导地位。启用为了实现中压/高压电源转换器的数量级功率密度提高，该提案确定了三个关键领域和科学差距，作为 PI 长期职业生涯的起点：1) 全面实时的表征、建模和研究用于堆叠 SiC 半导体的动态电压平衡方法，使 MV/HV 高速“超级开关”成为 MV/HV 转换器的基本构建模块 2) 固体电介质系统和电场 (E-field) 整形的研究。内部/外部无PD高密度电力电子集成的设计方法；3）中压传导EMI噪声抑制和EMI滤波器设计的研究在该计划中，将提供针对串联中压SiC MOSFET的全面的实时数字动态电压平衡解决方案。最终，将开发考虑电场应力管理和局部放电缓解的高压转换器集成的特性和设计工具，以及用于高频转换器的高压平面 EMI 滤波器。该计划将与具有功率器件物理、固体和气体介电材料、高压绝缘和电磁干扰方面专业知识的研究人员合作，开发集成的电磁屏蔽解决方案，以创建基本的跨领域知识、设计工具、创新解决方案和技术。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

SiC Three-Level Neutral-Point-Clamped Converter With Clamping Diode Volume Reduction Using Quasi-Two-Level Operation

• DOI: 10.1109/tpel.2023.3270370
• 发表时间: 2023-08
• 期刊: IEEE Transactions on Power Electronics
• 影响因子: 6.7
• 作者: Xiang Lin;D. Dong

Analysis of Quasi-Two-Level Modulation for Neutral-Point-Clamped Three-level Converter with 10 kV SiC MOSFETs

• DOI: 10.23919/epe21ecceeurope50061.2021.9570662
• 发表时间: 2021-09
• 期刊: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)
• 作者: Xiang Lin;D. Dong

Modulation Strategy for Three-level Neutral-Point-Clamped Converter Achieving Clamping Diodes Loss Control

• DOI: 10.1109/ecce50734.2022.9948187
• 发表时间: 2022-10
• 期刊: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
• 作者: Xiang Lin;D. Dong

Analysis of Alternative Baseplate-to-Heatsink Grounding Schemes in 10 kV SiC MOSFET Modules with Series-Connected Devices

• DOI: 10.1109/apec42165.2021.9487470
• 发表时间: 2021-06
• 期刊: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
• 作者: L. Ravi;Xiang Lin;Yue Xu;D. Dong;R. Burgos

Active Control and Gate-Driver Design for Voltage Balancing of Both MOSFETs and Body-Diodes in Series-Connected SiC MOSFETs

用于串联 SiC MOSFET 中 MOSFET 和体二极管电压平衡的主动控制和栅极驱动器设计

• DOI: 10.1109/ecce47101.2021.9595682
• 发表时间: 2021
• 期刊: IEEE
• 作者: Lin, Xiang;Ravi, Lakshmi;Dong, Dong;Burgos, Rolando
• 通讯作者: Burgos, Rolando