CAREER: SiC High-Frequency High-Voltage Power Converters with Partial-Discharge Mitigation and Electromagnetic Noise Containment

职业：具有局部放电缓解和电磁噪声抑制功能的 SiC 高频高压电源转换器

• 批准号: 2143488
• 负责人: Dong Dong
• 金额: $ 50万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-03-01 至 2027-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2143488&HistoricalAwards=false
• 关键词: CAREER; SiC; Frequency; Voltage; Power

The fast penetration of electric vehicles (EV), energy storage devices, distributed renewable energy resources put many challenges on the state-of-art ac power grid. Medium-voltage (MV) to high-voltage (HV) dc power network is considered as a promising solution to enable high-efficient, high-reliable, and low-carbon-emission energy transmission and delivery. High-density power electronic systems which can provide MV/HV output are very critical to enabling such MV/HV dc network. However, the existing system still suffers the bulky volume, heavy weight, and low reliability. This NSF CAREER project aims to address several fundamental challenges and bring transformative solutions and technologies to improve the power-density of MV and HV power converters with over an order of magnitude. This will be achieved by use of MV and HV wide-band-gap power semiconductor devices and multiple miniaturized system integration solution and tools. The intellectual merits of the project include many new scientific knowledge of driving and protecting HV wide-band-gap power semiconductor switching unit, comprehensive design tools of HV insulation system for high-frequency power electronics, physics and numerical-based models for predicting partial-discharge (PD) behaviors. The broader impacts of the project include help drive the fast adoption of MV and HV high-frequency high-density power conversion by bridging the industry knowledge gaps for emerging applications and drive the energy eco-system toward zero-carbon emissions and promote the US dominance in wide-band-gap power semiconductor industry and gain the market leadership. To enable the order-of-magnitude power density improvement of MV/HV power converters, this proposal identifies three critical areas and scientific gaps as the starting point for the PI’s long-term career: 1) Characterization, modeling, and investigation of a comprehensive real-time dynamic voltage balancing approach for stacking SiC semiconductors to enable a MV/HV high-speed “super-switch” as the basic building block for MV/HV converters. 2) Investigation of solid dielectric system and electric-field (E-field) shaping design methodologies for internal/external PD-free high-density power electronics integration; 3) Investigation of MV conductive EMI noise containment and EMI filter design. In the program, comprehensive real-time digital dynamic voltage balancing solutions for MV SiC MOSFETs in series will be explored. Characterization and design tools of HV converter integration considering E-field stress Management and PD mitigation will be developed. In the end, HV planar EMI filter with HV feed-through connector for high-frequency converter with integrated EM shielding solution will be developed. The proposed program will collaborate with the researchers with the expertise on power device physics, solid and gaseous dielectric materials and HV insulation, and EMI to create fundamental cross-domain knowledge, design tools, innovative solutions, and education materials.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

电动汽车（EV），能源存储设备，分布式可再生能源资源的快速渗透给最先进的交流电网带来了许多挑战。中型电压（MV）至高压（HV）DC功率网络被认为是实现高效，高可靠和低碳发射能量的传播和传递的承诺解决方案。可以提供MV/HV输出的高密度电力电子系统对于启用这种MV/HV DC网络至关重要。但是，现有系统仍然遭受庞大的体积，重量重和低可靠性。这个NSF职业项目旨在应对几个基本挑战，并带来变革性的解决方案和技术，以提高MV和HV功率转换器的功率密度，并以超过一定的数量级。这将通过使用MV和HV宽频隙功率半导体设备以及多个微型系统集成解决方案和工具来实现。该项目的智力优点包括许多有关驾驶和保护HV宽频宽功率半导体开关单元的新科学知识，用于高频电力电子，物理学和基于数值的模型的HV绝缘系统的综合设计工具，用于预测部分分离（PD）行为。该项目的广泛影响包括通过弥合新兴应用的行业知识差距，并将能源生态系统驱动到零碳排放，并促进美国在广泛的频段差异功率半导体行业中的优势来推动行业知识差距，并推动能源生态系统的快速采用高频高密度转换率的快速采用。 To enable the order-of-magnitude power density improvement of MV/HV power converters, this proposal identifies three critical areas and scientific gaps as the starting point for the PI’s long-term career: 1) Characterization, modeling, and investment of a comprehensive real-time Dynamic voltage balancing approach for stacking SiC semiconductors to enable a MV/HV high-speed “super-switch” as the basic building block for MV/HV转换器。 2）研究内部/外部无PD高密度电子集成的实心介电系统和电场（电子场）塑形设计方法； 3）研究MV导电EMI噪声遏制和EMI滤波器设计。在该计划中，将探索针对MV SIC MOSFET的全面实时数字动态电压平衡解决方案。考虑E-Field应力管理和PD缓解措施的HV转换器集成的表征和设计工具将被开发。最后，将开发带有HV平面EMI滤波器，用于高频转换器的HV进料连接器，并将开发具有集成EM屏蔽溶液的高频转换器。 The proposed program will collaborate with the researchers with the expertise on power device physics, solid and gaseous dietary materials and HV insulation, and EMI to create fundamental cross-domain knowledge, design tools, innovative solutions, and education materials.This award reflects NSF's statutory mission and has been deemed precious of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

项目成果

SiC Three-Level Neutral-Point-Clamped Converter With Clamping Diode Volume Reduction Using Quasi-Two-Level Operation

• DOI: 10.1109/tpel.2023.3270370
• 发表时间: 2023-08
• 期刊: IEEE Transactions on Power Electronics
• 影响因子: 6.7
• 作者: Xiang Lin;D. Dong

Analysis of Quasi-Two-Level Modulation for Neutral-Point-Clamped Three-level Converter with 10 kV SiC MOSFETs

• DOI: 10.23919/epe21ecceeurope50061.2021.9570662
• 发表时间: 2021-09
• 期刊: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)
• 作者: Xiang Lin;D. Dong

Modulation Strategy for Three-level Neutral-Point-Clamped Converter Achieving Clamping Diodes Loss Control

• DOI: 10.1109/ecce50734.2022.9948187
• 发表时间: 2022-10
• 期刊: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
• 作者: Xiang Lin;D. Dong

Analysis of Alternative Baseplate-to-Heatsink Grounding Schemes in 10 kV SiC MOSFET Modules with Series-Connected Devices

• DOI: 10.1109/apec42165.2021.9487470
• 发表时间: 2021-06
• 期刊: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
• 作者: L. Ravi;Xiang Lin;Yue Xu;D. Dong;R. Burgos

Hybrid Voltage Balancing Approach for Series-Connected SiC MOSFETs for DC–AC Medium-Voltage Power Conversion Applications

适用于 DC-AC 中压电源转换应用的串联 SiC MOSFET 的混合电压平衡方法

• DOI: 10.1109/tpel.2022.3149146
• 发表时间: 2022
• 期刊: IEEE Transactions on Power Electronics
• 影响因子: 6.7
• 作者: Lin, Xiang;Ravi, Lakshmi;Burgos, Rolando;Dong, Dong
• 通讯作者: Dong, Dong