GOALI: 1.2 kV Vertical GaN FETs enabled Novel Ultra-High-Density Bidirectional Soft-switching Dc-Dc Charger Architecture with Scalable Electronic-embedded Transformer

GOALI：1.2 kV 垂直 GaN FET 启用具有可扩展电子嵌入式变压器的新型超高密度双向软开关 DC-DC 充电器架构

• 批准号: 2202620
• 负责人: Dong Dong
• 金额: $ 40万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-15 至 2025-07-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2202620&HistoricalAwards=false
• 关键词: GOALI; 1.2; kV; Vertical; GaN

The electrification of land vehicles, including personal cars and transport/freight trucks, plays a critical role to accelerate the transformation of energy eco-system from fossil-fuel to zero-carbon-emission based renewable energies system. The high-efficient, high-density onboard battery charging system propels such electrification transformation. Inside the onboard charger, the galvanic isolation transformer represents one of the biggest and heaviest components, occupying about 50% of the total system size and weight. To increase the power density by an order of magnitude, the power transformer operation frequency has to reach MHz range meanwhile efficiently delivering tens of kW and even hundreds of kW power. This poses a huge challenge and many fundamental knowledge gaps need to be addressed, including high-efficient ultra-fast switching devices and ultra-high-frequency high power transformer. This NSF GOALI program proposes to investigate and develop a novel bi-directional high-power dc-dc onboard charger system with ultra-high-power density and scalability operating beyond MHz by adopting novel medium-voltage vertical GaN field-effect transistors (FETs) and proposed electronic-embedded transformer (EET) concepts. The team from Virginia Tech will carry out the proposed research tasks. The program will collaborate with researchers/technologists from two industry partners: Carrier Corporation and NexGen Power Systems.To enable the order-of-magnitude power density improvement in onboard battery charger, this proposal proposes four critical areas and scientific gaps: 1. Design and demonstrate 1.2 kV GaN-on-GaN vertical GaN field-effect transistor (FETs) based high-frequency power converters which operates over 1 MHz with over 800 V input. 2. Investigate a novel ultra-high-frequency “Electronic-embedded Transformer (EET)” concept for ease of transformer integration and paralleling operation for high power applications. 3. Investigate soft-switching (zero-voltage switching, and close to zero-current switching) circuit operation with auto-tuned operation point for high-efficiency operation over entire operation life. 4. Characterize MV vertical GaN FETs static and dynamic performance, establish device physics-based models, and create a comprehensive reliability assessment of vertical GaN FETs under repetitive short circuit and surge energy for automobile industry. The innovation circuit solutions and fundamental knowledge can be applied to a wide range of applications, like solid-state transformer; EV battery charger, commercial and utility energy storage system, PV string optimizer, etc. The device modeling and characterization, circuit operation, and reliability evaluation will offer the in-depth knowledge of understanding vertical GaN technology and its comparison with SiC MOSFET for both power semiconductor and power electronics industries.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

陆地车辆的电气化，包括个人汽车和运输/货运卡车，在加速从化石燃料到基于零碳排放的可再生能源系统的能源生态系统的转变起着至关重要的作用。高效的高密度电池充电系统促进了这种电气化转换。在板载充电器内部，电流隔离变压器代表最大，最重的组件之一，约占系统总尺寸和重量的50％。为了增加功率密度的数量级，功率变压器的操作频率必须达到同时有效地传递数十kW甚至数百个kW功率的MHz范围。这是一个巨大的挑战，需要解决许多基本知识差距，包括高效的超快速开关设备和超高频高功率变压器。这项NSF Goali计划的建议提案，旨在通过采用新型的中型垂直GAN FIERTICT效果变形金刚（FETS）和提议的电子设备的变压器（EET）概念来调查和开发一种新型的双向高功率DC-DC在板载充电器系统上，其超高功率密度和超出MHz的可扩展性。来自弗吉尼亚理工大学的团队将执行拟议的研究任务。 The program will collaborate with researchers/technologists from two industry partners: Carrier Corporation and NexGen Power Systems.To enable the order-of-magnitude power density improvement in onboard battery charger, this proposal proposal four critical areas and scientific gaps: 1. Design and demonstrate 1.2 kV GaN-on-GaN vertical GaN field-effect transformer (FETs) based high-frequency power converters which operates over 1 MHz with over 800 V 输入。 2。研究一种新型的超高频率“电子包裹的变压器（EET）”概念，以方便用于高功率应用的变压器整合和并行操作。 3。研究软旋转（零电压开关，接近零电流切换）电路操作，并具有自动调整的操作点，以在整个操作寿命中进行高效操作。 4.表征MV垂直GAN FET的静态和动态性能，建立基于设备物理的模型，并在重复的短路和汽车行业的涌现能源下对垂直GAN FET进行全面的可靠性评估。创新电路解决方案和基本知识可以应用于固态变压器等广泛应用；电动电池充电器，商业和公用事业储能系统，PV弦乐优化器等。设备建模和表征，电路操作以及可靠性评估将提供了解垂直GAN技术的深入了解及其与SIC MOSFET的比较，用于Power Semiconductor和Power Electonics的Power Semiconductor和Power Electronics奖励，这些奖项通过NSF的合法任务和支持的良好的支持，这表明了NSF的众多奖励。 标准。

项目成果

Dynamic RON Free 1.2-kV Vertical GaN JFET

• DOI: 10.1109/ted.2023.3338140
• 发表时间: 2024-01
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Xin Yang;Ruizhe Zhang;Bixuan Wang;Q. Song;Andy Walker;S. Pidaparthi;Cliff Drowley;Yuhao Zhang-Yuhao

A Scalable Electronic-Embedded Transformer, a New Concept Toward Ultra-High-Frequency High-Power Transformer in DC–DC Converters

可扩展的电子嵌入式变压器，直流-直流转换器中超高频大功率变压器的新概念

• DOI: 10.1109/tpel.2023.3279259
• 发表时间: 2023
• 期刊: IEEE Transactions on Power Electronics
• 影响因子: 6.7
• 作者: Cao, Yuliang;Ngo, Khai;Dong, Dong
• 通讯作者: Dong, Dong

Power device breakdown mechanism and characterization: review and perspective

功率器件击穿机制和表征：回顾与展望

• DOI: 10.35848/1347-4065/acb365
• 发表时间: 2023
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Zhang, Ruizhe;Zhang, Yuhao
• 通讯作者: Zhang, Yuhao