GOALI: 1.2 kV Vertical GaN FETs enabled Novel Ultra-High-Density Bidirectional Soft-switching Dc-Dc Charger Architecture with Scalable Electronic-embedded Transformer

GOALI：1.2 kV 垂直 GaN FET 启用具有可扩展电子嵌入式变压器的新型超高密度双向软开关 DC-DC 充电器架构

• 批准号: 2202620
• 负责人: Dong Dong
• 金额: $ 40万
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-15 至 2025-07-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2202620&HistoricalAwards=false
• 关键词: GOALI; 1.2; kV; Vertical; GaN

The electrification of land vehicles, including personal cars and transport/freight trucks, plays a critical role to accelerate the transformation of energy eco-system from fossil-fuel to zero-carbon-emission based renewable energies system. The high-efficient, high-density onboard battery charging system propels such electrification transformation. Inside the onboard charger, the galvanic isolation transformer represents one of the biggest and heaviest components, occupying about 50% of the total system size and weight. To increase the power density by an order of magnitude, the power transformer operation frequency has to reach MHz range meanwhile efficiently delivering tens of kW and even hundreds of kW power. This poses a huge challenge and many fundamental knowledge gaps need to be addressed, including high-efficient ultra-fast switching devices and ultra-high-frequency high power transformer. This NSF GOALI program proposes to investigate and develop a novel bi-directional high-power dc-dc onboard charger system with ultra-high-power density and scalability operating beyond MHz by adopting novel medium-voltage vertical GaN field-effect transistors (FETs) and proposed electronic-embedded transformer (EET) concepts. The team from Virginia Tech will carry out the proposed research tasks. The program will collaborate with researchers/technologists from two industry partners: Carrier Corporation and NexGen Power Systems.To enable the order-of-magnitude power density improvement in onboard battery charger, this proposal proposes four critical areas and scientific gaps: 1. Design and demonstrate 1.2 kV GaN-on-GaN vertical GaN field-effect transistor (FETs) based high-frequency power converters which operates over 1 MHz with over 800 V input. 2. Investigate a novel ultra-high-frequency “Electronic-embedded Transformer (EET)” concept for ease of transformer integration and paralleling operation for high power applications. 3. Investigate soft-switching (zero-voltage switching, and close to zero-current switching) circuit operation with auto-tuned operation point for high-efficiency operation over entire operation life. 4. Characterize MV vertical GaN FETs static and dynamic performance, establish device physics-based models, and create a comprehensive reliability assessment of vertical GaN FETs under repetitive short circuit and surge energy for automobile industry. The innovation circuit solutions and fundamental knowledge can be applied to a wide range of applications, like solid-state transformer; EV battery charger, commercial and utility energy storage system, PV string optimizer, etc. The device modeling and characterization, circuit operation, and reliability evaluation will offer the in-depth knowledge of understanding vertical GaN technology and its comparison with SiC MOSFET for both power semiconductor and power electronics industries.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

陆地车辆的电气化，包括个人汽车和运输/免费的卡车，从化石燃料到基于零碳排放的可再生能源系统，高效，高效率高 - 密度在船上电池系统的电气化转换。 . ResentS ONE OF THE BIGEST COMPONENTS, OCCUPYING ABOUT OF TOTAL SYSTEM SIZE and WEIGHT. To Increase The Power Density by An Order magnitude , The Power Transformer Operation Free Mhz Range Mhz Range Efficiently Delivering Tens of Kw and EvenReds of Kw Power. e Challenge and需要解决许多基本知识差距，包括高效率超快速切换设备和超频率高功率变压器。超高功率密度和可扩展性的竖琴系统超出了BEY的运行，采用了新型的中电压垂直gan场效应晶体管（FET）和支撑的电子装置变压器（EET）概念。任务。 GAN场效应晶体管（FETS）基于1 MHz的高频转换器超过800 V输入。电压切换，接近零电流切换）电路操作，具有自动调整点的效率 - 效率在整个运行寿命中。在汽车行业的重复性和电涌下的垂直fets。特征，电路操作。可靠性评估将提供深入的了解，以了解Power Sicicductor和Power Electronics的SIC MOSFET，这是NSF的法定任务更广泛的影响审查标准。

项目成果

Dynamic RON Free 1.2-kV Vertical GaN JFET

• DOI: 10.1109/ted.2023.3338140
• 发表时间: 2024-01
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Xin Yang;Ruizhe Zhang;Bixuan Wang;Q. Song;Andy Walker;S. Pidaparthi;Cliff Drowley;Yuhao Zhang-Yuhao

A Scalable Electronic-Embedded Transformer, a New Concept Toward Ultra-High-Frequency High-Power Transformer in DC–DC Converters

可扩展的电子嵌入式变压器，直流-直流转换器中超高频大功率变压器的新概念

• DOI: 10.1109/tpel.2023.3279259
• 发表时间: 2023
• 期刊: IEEE Transactions on Power Electronics
• 影响因子: 6.7
• 作者: Cao, Yuliang;Ngo, Khai;Dong, Dong
• 通讯作者: Dong, Dong

Power device breakdown mechanism and characterization: review and perspective

功率器件击穿机制和表征：回顾与展望

• DOI: 10.35848/1347-4065/acb365
• 发表时间: 2023
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Zhang, Ruizhe;Zhang, Yuhao
• 通讯作者: Zhang, Yuhao