Collaborative Research: Two-photon absorption engineering in laser diodes for ultrafast pulse generation
合作研究:用于超快脉冲生成的激光二极管中的双光子吸收工程
基本信息
- 批准号:2133195
- 负责人:
- 金额:$ 25万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2021
- 资助国家:美国
- 起止时间:2021-09-01 至 2025-08-31
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
Semiconductor lasers are one of the most impactful photonic technologies on the market, with applications ranging from communications to medicine. However, the amount of power that can be obtained from short pulses of light remains low, despite decades of research. The problem is due to physical constraints, which the project will address through an interdisciplinary effort combing emerging materials synthesis with advanced optical physics to create short pulses with power well beyond the current state of the art. This will enable significant advances in both scientific understanding and practical performance, and will yield sources ideal for applications ranging from laser radar for autonomous vehicle navigation to advanced microscopy. The project will further benefit society by integrating research results with education through courses, and into an online course that was launched as part of the University of Colorado Boulder's Master of Science in Electrical Engineering (an online Master's degree). Additional dissemination and engagement will occur through avenues ranging from undergraduate research opportunities, a diversity, equity, and inclusion seminar series, ECEE Connects at the University of Colorado Boulder, as well as science events at the Texas School for the Deaf.Nonlinearities like two-photon absorption limit semiconductor lasers in both the high power CW and ultrashort pulse arenas, constraining the available peak powers, pulse widths, and pulse energies. For pulsed sources, dispersion compensation provides some improvement; however, less-compact alternatives, such as fiber and solid-state lasers currently offer vastly superior performance. This project will combine recent advances in crystal growth and optical laser pulse shaping techniques to solve these issues and dramatically advance the performance of semiconductor ultrafast sources. Specifically. high-bandgap semiconductor cladding layers can now be epitaxially integrated with longer-wavelength gain media to reduce two-photon absorption by orders of magnitude. When coupled with a new pulse shaping mechanism and pulse stacking, it is anticipated that this approach will enable kW peak powers and femtosecond pulses on a chip-scale semiconductor platform. The impact of the project will be further enhanced through a number of engagements and outreach activities and undergraduate research opportunities.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
半导体激光器是市场上最有影响力的光子技术之一,其应用从通信到医学不等。但是,尽管进行了数十年的研究,但可以从短脉冲中获得的功率量仍然很低。问题是由于物理上的限制,该项目将通过跨学科的努力来解决新兴材料与先进的光学物理学合成,以创造出具有功率的短脉冲,远远超出了目前的最新状态。这将在科学理解和实践表现方面取得重大进步,并将产生从自动驾驶汽车导航到高级显微镜的应用程序的理想来源。该项目将通过将研究成果与通过课程进行教育结合,并进入在线课程,并作为科罗拉多大学博尔德大学电气工程科学硕士(在线硕士学位)启动的在线课程进一步受益。额外的传播和参与将通过从本科研究机会,多样性,公平性和包容性研讨会系列的途径发生,ECEE在科罗拉多州博尔德大学以及得克萨斯州聋人学校的科学事件以及诺尔线程的科学活动。宽度和脉搏能量。对于脉冲来源,分散补偿可提供一些改进;但是,当前纤维和固态激光器等较不吻合的替代方案可提供卓越的性能。该项目将结合晶体生长和光学激光脉冲塑形技术的最新进展,以解决这些问题,并显着提高半导体超快源的性能。具体来说。现在可以将高频道半导体覆层层与更长的波长增益培养基相结合,以通过数量级来减少两光子吸收。当结合新的脉冲塑形机构和脉冲堆叠时,预计这种方法将在芯片尺度的半导体平台上启用KW峰值功率和飞秒脉冲。该项目的影响将通过许多参与和外展活动和本科研究机会进一步增强。该奖项反映了NSF的法定任务,并被认为是值得通过基金会的知识分子优点和更广泛影响的评估标准通过评估来获得支持的。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Juliet Gopinath其他文献
Juliet Gopinath的其他文献
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{{ truncateString('Juliet Gopinath', 18)}}的其他基金
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2215550 - 财政年份:2022
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$ 25万 - 项目类别:
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$ 25万 - 项目类别:
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1926668 - 财政年份:2019
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$ 25万 - 项目类别:
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PFI-TT: Laser ranging system with tunable optical elements
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1919148 - 财政年份:2019
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$ 25万 - 项目类别:
Standard Grant
GOALI: Stimulated Raman microscopy for sensitive real-time detection of membrane fouling
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$ 25万 - 项目类别:
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$ 25万 - 项目类别:
Standard Grant
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