RUI: Collaborative Research: Structural and Compositional Modification of Memristive Niobium Oxide Films for Neuromorphic Computing Applications

RUI：合作研究：用于神经形态计算应用的忆阻氧化铌薄膜的结构和成分改性

• 批准号: 2103197
• 负责人: Matthew Sullivan
• 金额: $ 19.61万
• 依托单位: Ithaca College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-06-01 至 2025-05-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2103197&HistoricalAwards=false
• 关键词: RUI; Collaborative; Research; Structural; Compositional

Non-technical abstractThe rapid and seemingly relentless improvement in electronic circuitry over the last seven decades has been driven in large part by miniaturization of the electronic components. However, adverse quantum effects at extremely small length scales present an impending limit to shrinking of these circuits, and many researchers have looked to biological systems for inspiration for further improvement. Neuromorphic, or brain-inspired, computing has the potential to enhance performance and computational speed while reducing power consumption by mimicking the biological function of neurons. The research team from the undergraduate-only physics departments at SUNY Brockport and Ithaca College, along with collaborators from the U.S. Naval Research Laboratory, are studying thin films of niobium oxide for use in neuromorphic circuits. Thin-film niobium oxide is an ideal candidate for neuromorphic circuits, as it is plentiful, inexpensive, non-toxic, and can mimic both the brain’s neuronal and synaptic behaviors. This project focuses on the growth of the thin films, incorporation of other elements (such as zinc and aluminum) in the films, post-growth thermal annealing, and fabrication into electronic circuit components. The research team is focusing their effort on correlating the various material changes (e.g., oxide composition, thickness, growth parameters) with the device’s resulting electronic behavior. Ultimately, the project’s goal is to develop niobium oxide based electronic components that can seamlessly integrate with the current state-of-the-art silicon-based electronics. Undergraduate students are integral members of the research team, and participation in this research is often attractive to members of groups underrepresented in physics. Undergraduate student members of the research team participate in all aspects of the research project during both the summer and during the academic year, and present their work at regional and national conferences. The PIs regularly present at local schools in areas with students from underrepresented groups and include information on successes, challenges, and opportunities in materials science and computer science to ignite interest in science and technology.Technical descriptionNiobium oxide is a polymorphic material that, depending on stoichiometry, has a number of interesting and potentially useful electrical and optical properties. Crystalline niobium dioxide (NbO2), in particular, displays volatile memristive behavior, and is a leading candidate for architectures that merge traditional metal-oxide-semiconductor components with brain-inspired neuromorphic circuit elements, which are generally required to have both synapse-like and neuron-like components. This project focuses on developing a better understanding of NbO2, which undergoes a volatile phase transition from high to low resistance around 800 degrees Celsius. This transition mimics the spiking electrical behavior of neurons by abruptly changing resistance once a temperature threshold is achieved. The research team – which consists of two principal investigators, with specialties of materials development and electric transport, their undergraduate research students, and collaborators from the U.S. Naval Research Laboratory – is studying both the material deposition and post-deposition treatment processes, as well as the optical and electrical behavior of the resulting films. On the materials side, the research team uses atomic layer deposition (ALD), doping, and post-growth crystallization techniques to fabricate high-quality NbO2 in a way that is fully compatible with existing semiconductor manufacturing processes. Specifically, the project examines the addition of dopants during ALD to encourage crystallization with a thermal budget compatible with low-power device operation. Following crystallization, an ultra-high vacuum system is used to thermally cycle the material through its phase transition while observing reflected and transmitted optical signals to quickly establish the effect of growth conditions or dopants on the phase transition temperature. On the device side, electrical measurements are performed to establish the effect that material preparation and properties have on key device operation parameters, such as the number of transitions that can be performed before failure, the device yield, and the switching power requirements.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术摘要在过去的七十年中，电子电路的快速而似乎不断改进，这在很大程度上是通过电子组件的小型化来驱动的。但是，在极小长度的尺度上，不良量子效应呈现出这些电路缩小的限制，许多研究人员都希望生物系统寻求灵感以进一步改进。神经形态或受脑启发的计算有可能提高性能和计算速度，同时通过模仿神经元的生物学功能来降低功耗。来自SUNY BROCKPORT和ITHACA学院的仅本科物理学系的研究团队以及美国海军研究实验室的合作者正在研究用于神经形态电路中的氧化物氧化物薄膜。薄膜氧化物氧化物是神经形态回路的理想候选者，因为它丰富，廉价，无毒，并且可以模仿大脑的神经元和突触行为。该项目的重点是薄膜的生长，薄膜的生长，结合了薄膜中其他元素（例如锌和铝的材料），增长后的热退火，并制造成电子电路组件。研究团队将精力集中在将各种材料变化（例如氧化物组成，厚度，生长参数）与设备产生的电子行为相关联。最终，该项目的目标是开发基于氧化物的电子组件，这些电子组件可以与当前的最新硅电子产品无缝集成。本科生是研究团队不可或缺的成员，参与这项研究通常对物理中代表性不足的群体的成员有吸引力。研究小组的本科生成员参加了夏季和学年期间研究项目的各个方面，并在区域和民族会议上介绍他们的工作。 PIS定期在当地学校的地区，来自代表性不足的群体的学生，包括有关材料科学和计算机科学领域的成功，挑战和机遇的信息，以激发对科学和技术的兴趣。技术描述氧化物氧化物是一种多态性材料，是一种依靠stoichimetry的多态性材料。尤其是二氧化碳（NBO2）晶体二氧化碳（NBO2）表现出挥发性的回忆行为，并且是将传统的金属氧化物 - 氧化物 - 轴导剂成分与脑启发的神经形态电路元素合并的结构的领先候选者，这些元素通常需要具有突触样和神经类似于神经性的类似的组合。该项目的重点是对NBO2有更好的了解，该项目经历了从高耐高力到800摄氏度左右的挥发性相变。一旦达到温度阈值，这种过渡通过突然改变的电阻模仿神经元的尖峰电行为。该研究团队由两名主要研究人员组成，这些研究人员拥有材料开发和电动运输专业，其本科研究专业的学生以及来自美国海军研究实验室的合作者 - 正在研究材料沉积和沉积后处理过程，以及所得电影的光学和电气行为。在材料方面，研究团队使用原子层沉积物（ALD），掺杂和增长后结晶技术来制造高质量的NBO2，其方式与现有的半导体制造过程完全兼容。具体而言，该项目在ALD期间对掺杂剂的添加添加，以通过与低功率设备操作兼容的热预算来鼓励结晶。结晶后，使用超高真空系统将材料通过其相变循环，同时观察反射和传输光学信号，以快速确定生长条件或掺杂剂对相变温度的影响。 On the device side, electrical measurements are performed to establish the effect that material preparation and properties have on key device operation parameters, such as the number of transitions that can be performed before failure, the device yield, and the switching power requirements.This award reflects NSF's statutory mission and has been deemed honestly of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

项目成果

Threshold switching stabilization of NbO2 films via nanoscale devices

• DOI: 10.1116/6.0002129
• 发表时间: 2022-12
• 期刊: Journal of Vacuum Science & Technology B
• 作者: M. C. Sullivan;Z. Robinson;K. Beckmann;Alex Powell;Ted Mburu;Katherine Pittman;N. Cady