Excellence in Research: Development of two-dimensional (2D) molybdenum disulfide (MoS2) and molybdenum selenium (MoSe2) thin-film nanomaterials and nanoelectronic devices

卓越研究：二维（2D）二硫化钼（MoS2）和钼硒（MoSe2）薄膜纳米材料和纳米电子器件的开发

基本信息

批准号：
2100748
负责人：
Zhigang Xiao
金额：
$ 49.12万
依托单位：
Alabama A&M University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2021
资助国家：
美国
起止时间：
2021-07-15 至 2025-06-30
项目状态：
未结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=2100748&HistoricalAwards=false
关键词：
Excellence Research Development two dimensional

项目摘要

Two-dimensional (2D) semiconductor nanomaterials are promising electronic nanomaterials and could be used for future high-speed nanoelectronics because of their superior electrical properties. In this project, 2D molybdenum disulfide (MoS2) and molybdenum selenium (MoSe2) semiconductor thin-film nanomaterials will be grown using plasma-enhanced atomic layer deposition. The 2D molybdenum disulfide and molybdenum selenium thin-film nanomaterials will be used to fabricate 2D nanomaterial-based field-effect transistors and integrated electronic devices. The device fabrication is compatible with the current standard fabrication of silicon integrated devices for computer chips and could lead to 2D nanomaterial-based computer chips with much smaller transistors. Semiconductor devices represent a multi-trillion-dollar industry. The 2D nanomaterial-based nanoelectronic devices could contribute to the rapidly growing industry of semiconductor and nano-manufacturing and are potential alternatives to silicon-based electronic devices. This project can have great impacts on US and global societies and provide many societal benefits. The primary educational goal of this program is to integrate the research objectives to enhance the educational experiences of students. Minority graduate and undergraduate students will be mentored to perform research in nanofabrication and nanotechnology in the project. The project will also offer summer research opportunities for high school students. The research objective of this project is to grow two-dimensional (2D) molybdenum disulfide (MoS2) and molybdenum selenium (MoSe2) semiconductor thin-film nanomaterials using remote plasma-enhanced atomic layer deposition (PE-ALD) and fabricate 2D nanomaterial-based nanoelectronic devices. An innovative localized growth method will be used to grow the 2D nanomaterials with higher ordered nanolayers and nanostructures. Unlike the conventional growth of 2D nanomaterials which grow the nanomaterials on a flat and smooth surface of substrate, the innovative localized growth will use nano-patterned substrates to grow the 2D nanomaterials with higher-ordered nanolayers and nanostructures and would allow substrate materials such as hafnium oxide and zirconium oxide for the growth of the 2D nanomaterials. The 2D nanomaterials will then be used as the active channel material to fabricate 2D nanomaterial-based field-effect transistors (FETs) and integrated electronic circuits such as inverters and oscillators using cleanroom-based micro and nanofabrication techniques. The 2D molybdenum disulfide and molybdenum selenium nanomaterials are semiconductor materials with appropriate band gaps for electronic devices applications and have unique electrical properties such as ballistic quantum transport, which enable the 2D nanomaterial-based FETs to have higher current on/off ratios and to operate faster without energy dissipation. Nanoelectronic devices built on the 2D materials offer many benefits for further miniaturization beyond Moore’s Law and the possibility to revolutionize future electronic technologies. This project is potentially transformative and will create a new 2D nanomaterial and device fabrication paradigm. The project will greatly benefit the research community and semiconductor industry by providing new approaches for the fabrication of 2D nanomaterials and nanoelectronic devices. The innovative localized growth method can effectively grow nanolayered 2D thin-film materials with higher-ordered nanolayers and nanostructures while remote plasma-enhanced atomic layer deposition can offer new opportunities to grow 2D nanomaterials with improved electrical properties, leading to higher-performance functional 2D nanoelectronic devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

二维（2D）半导体纳米材料是有希望的电子纳米材料，由于其优异的电性能，可用于将来的高速纳米电子。在这个项目中，使用浆液性原子层沉积将生长2D钼二硫化物（MOS2）和钼硒（MOSE2）半导体薄膜纳米材料。 2D钼二硫化物和钼硒薄膜纳米材料将用于制造基于2D纳米材料的野外晶体管和集成的电子设备。该设备制造与当前标准制造的计算机芯片的硅集成设备兼容，并且可能导致具有较小晶体管的2D基于2D的基于纳米材料的计算机芯片。半导体设备代表了数万亿美元的行业。 2D基于纳米材料的纳米电机设备可能有助于半导体和纳米制造的快速增长的行业，并且是基于硅电子设备的潜在替代品。该项目可能会对美国和全球社会产生重大影响，并提供许多社会利益。该计划的主要教育目标是整合研究目标，以增强学生的教育经验。少数群体的毕业生和本科生将被认为在项目中从事纳米制作和纳米技术的研究。该项目还将为高中生提供夏季研究机会。该项目的研究目的是使用远程质膜增强原子层沉积（PE-ALD）（PE-ALD）（PE-ALD）（PE-ALD）和制造2D纳米材料基于基于2D的基于基于的Nananoelectronic devisices。一种创新的局部增长方法将用于种植具有较高有序纳米层和纳米结构的2D纳米材料。 Unlike the conventional growth of 2D nanomaterials which grow the nanomaterials on a flat and smooth surface of substrate, the innovative localized growth will use nano-patterned substrates to grow the 2D nanomaterials with higher-ordered nanolayers and nanostructures and would allow substrate materials such as hafnium oxide and zirconium oxide for the growth of the 2D nanomaterials.然后，2D纳米材料将用作有源通道材料，以使用基于清洁室的微型和纳米化技术来制造基于2D纳米材料的现场效应变压器（FET）和集成电子电路，例如逆变器和振荡器。 2D钼二硫化物和钼硒材料是具有适当的电子设备应用的适当带隙的半导体材料，具有独特的电气性能，例如弹道量子传输，它使2D纳米材料的FET能够具有更高的电流ON/OFF比率，并且可以越来越富含能量，并且可以加快能源的功能。建立在2D材料上的纳米电子设备为超越摩尔定律的进一步微型化以及彻底改变未来电子技术的可能性提供了许多好处。该项目可能具有变革性，并将创建一个新的2D纳米材料和设备制造范式。该项目将通过为制造2D纳米材料和纳米电子设备提供新方法，从而极大地使研究界和半导体行业受益。 The innovative localized growth method can effectively grow nanolayered 2D thin-film materials with higher-ordered nanolayers and nanostructures while remote plasma-enhanced atomic layer deposition can offer new opportunities to grow 2D nanomaterials with improved electrical properties, leading to higher-performance functional 2D nanoelectronic devices.This award reflects NSF's statutory mission and has been deemed诚实地，使用基金会的智力优点和更广泛的影响审查标准来通过评估来提供支持。