Collaborative Research: ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power Switching

合作研究：ECCS-EPSRC：用于稳健、高效、快速功率开关的氮化物超级结 HEMT

• 批准号: 2036915
• 负责人: Han Wang
• 金额: $ 23万
• 依托单位: University of Southern California
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-02-01 至 2024-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2036915&HistoricalAwards=false
• 关键词: Collaborative; Research; ECCS; EPSRC; Nitride

Award AbstractProposal Number: 2036740 & 2036915Principal Investigator: Yuhao Zhang and Han Wang (co-PI)Title: Collaborative Research: ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power SwitchingInstitution: Virginia Polytechnic Institute and State University (Lead) and University of Southern CaliforniaNon-Technical Abstract:Power semiconductor devices are regularly utilized as solid-state switches in power electronic systems that are widely used in consumer electronics, data centers, electric vehicles, electricity grid, and renewable energy systems. The global power device market exceeds $15 billion in 2019 and is fast growing. Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are commonly perceived as the next generation of power devices. Despite their initial commercialization recently, their wide adoption in industrial applications is hindered by the limitation in reliability and robustness, resulting in considerable over design, rendering device performance far below the material limit. This project will develop a new generation of robust, charge-balanced GaN HEMTs through innovation in the semiconductor materials and device structure. Interdisciplinary research will be carried out in materials, devices, fabrication processes, and circuit-level tests through collaboration between Virginia Tech and the University of Southern California in the United States, as well as University of Cambridge in United Kingdom under the “NSF Engineering - UKRI Engineering and Physical Sciences Research Council Lead Agency Opportunity (ENG-EPSRC)”. This US-UK collaborative project provides opportunities for student education and international exchange, development of cross-university teaching modules, and industrial collaboration for potential technology transfer. This interdisciplinary, cross-continent project also involves outreach activities for K-12 students and teachers, and promotes educational activities related to microelectronics and power electronics technologies.Technical Abstract:This overarching hypothesis is that robust gallium nitride (GaN) high-electron-mobility transistors (HEMTs) can be implemented by selective-area, nearly defect-free embedding of p-type regions into the two-dimensional electron gas (2DEG) channel, forming a novel charge-balanced super-junction structure. This novel 2D-3D super-junction structure can not only enhance the device robustness by managing the electric field and avalanche capability, but also allow significantly higher 2DEG density while maintaining the normally-off operation, thereby decreasing the device specific on-resistance and boosting its switching frequency. Despite these promises, major gaps exist in the device physics of the novel super-junction, interfacial material properties, and the dynamic performance of super-junction HEMTs in power electronic circuits. Funded by the “NSF Engineering - UKRI Engineering and Physical Sciences Research Council Lead Agency Opportunity (ENG-EPSRC)”, this project aims to address the scientific knowledge gaps in four relevant areas through the US-UK research collaboration: (a) to explore the design space and performance limits of the novel super-junction HEMT device; (b) to probe new methods of selectively introducing p-type dopants into the 2DEG channel to realize the super-junction functionality; (c) to develop an in-depth understanding of the dopant profiles, carrier transport, and trap dynamics in the nitride super-junction structure; and (d) to correlate the nano/mesoscale materials and interface properties with the dynamic characteristics and robustness of GaN HEMTs.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

奖励摘要宣传编号：2036740＆2036915原理研究者：Yuhao Zhang和Han Wang（Co-Pi）（Co-Pi）标题：合作研究：ECCS-EPSRC：Nitride Super-Juntions for for Nitride Super-Juntions for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride for for Nitride研究半导体设备经常用作电力电子系统中的固态开关，这些开关广泛用于消费电子，数据中心，电动汽车，电网和可再生能源系统。全球电力设备市场在2019年超过150亿美元，并且正在快速增长。硝酸甘露（GAN）高电动运动晶体管（HEMTS）通常被视为下一代动力装置。尽管他们最近最初的商业化，但它们在工业应用中的广泛采用受到了可靠性和鲁棒性的限制，因此考虑到设计，使设备性能远低于物料限制。该项目将通过半导体材料和设备结构的创新来发展新一代强大的电荷平衡gan hemts。跨学科研究将在材料，设备，制造过程和电路级测试中通过弗吉尼亚理工大学与美国南加州大学之间的合作以及美国的剑桥大学在“ NSF工程 - UKRI工程和物理科学研究委员会领导机构的领导机构（Eng-EPSRC）”下进行。这个US-UK合作项目为学生教育和国际交流，跨大学教学模块的发展以及潜在技术转移的工业合作提供了机会。这个跨学科的跨学科项目还涉及针对K-12学生和老师的外展活动，并促进与微电子和电力电子技术相关的教育活动。技术摘要：这种总体假设是，强大的硝酸盐（GAN）硝酸盐（GAN）高电动型型（HEMT）可以通过选择范围，可以通过选择范围来选择范围。进入二维电子气体（2DEG）通道的区域，形成了一种新型的电荷平衡超连接结构。这种新颖的2d-3d超级结构不仅可以通过管理电场和雪崩能力来增强设备的鲁棒性，而且还可以在保持正常的操作的同时允许明显更高的2DEG密度，从而降低设备特定的抗性和提高其开关频率。尽管有这些承诺，但新型超级结，界面材料特性的装置物理学中仍然存在主要差距，以及电力电子电路中超级结束的动态性能。该项目由“ NSF工程 - 乌克里工程和物理科学研究委员会领导机构机会（ENG-EPSRC）”资助，该项目旨在通过US-UK研究合作解决四个相关领域的科学知识差距：（a）探索新颖的超级连接HEMT设备的设计空间和性能限制； （b）探测有选择地将P型掺杂剂引入2DEG通道的新方法以实现超时功能； （c）对氮化物超连接结构中的掺杂物剖面，载体传输和陷阱动力学有深入的了解； （d）将纳米/中尺度材料和界面特性与甘恩特（Gan Hemt）的动态特征和鲁棒性相关联。该奖项反映了NSF的法定任务，并通过使用基金会的智力优点和更广泛的影响来评估NSF的法定任务。

项目成果

(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV

（特邀）多通道 AlGaN/GaN 功率整流器：高达 10 kV 的突破性性能

• DOI: 10.1149/10404.0051ecst
• 发表时间: 2021
• 期刊: ECS Transactions
• 作者: Zhang, Yuhao;Xiao, Ming;Ma, Yunwei;Du, Zhonghao;Wang, Han;Xie, Andy;Beam, Edward;Cao, Yu;Cheng, Kai
• 通讯作者: Cheng, Kai

Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT)

多通道单片共源共栅 HEMT (MC2-HEMT)

• 发表时间: 2021
• 期刊: IEEE International Electron Devices Meeting (IEDM
• 作者: Xiao, M;Ma, Y.;Du, Z.;Pathirana, V.;Cheng, K.;Xie, A.;Beam, E.;Cao, Y.;Udrea, F.;Wang, H.
• 通讯作者: Wang, H.

Activating Thick Buried p-GaN for Device Applications

激活厚埋 p-GaN 用于器件应用

• DOI: 10.1109/ted.2022.3186652
• 发表时间: 2022
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Ma, Yunwei;Xiao, Ming;Du, Zhonghao;Wang, Lei;Carlson, Eric;Guido, Louis;Wang, Han;Wang, Lai;Luo, Yi;Zhang, Yuhao
• 通讯作者: Zhang, Yuhao

Multidimensional device architectures for efficient power electronics

• DOI: 10.1038/s41928-022-00860-5
• 发表时间: 2022-11
• 期刊: Nature Electronics
• 影响因子: 34.3
• 作者: Yuhao Zhang;F. Udrea;Han Wang

First Demonstration of Vertical Superjunction Diode in GaN

GaN 垂直超结二极管的首次演示

• DOI: 10.1109/iedm45625.2022.10019405
• 发表时间: 2022
• 期刊: First Demonstration of Vertical Superjunction Diode in GaN
• 作者: Xiao, Ming;Ma, Yunwei;Du, Zhonghao;Qin, Yuan;Liu, Kai;Cheng, Kai;Udrea, Florin;Xie, Andy;Beam, Edward;Wang, Boyan
• 通讯作者: Wang, Boyan