CAREER: Harnessing Tunable Properties of Black Phosphorus for Novel Electronic Device Application

职业：利用黑磷的可调特性用于新型电子设备应用

• 批准号: 1653870
• 负责人: Han Wang
• 金额: $ 50万
• 依托单位: University of Southern California
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-03-01 至 2023-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1653870&HistoricalAwards=false
• 关键词: CAREER; Harnessing; Tunable; Properties; Black

The semiconductor electronics technology plays a critical role in enabling many electronic systems for computation and communication applications from computers to smart phones. The study of new semiconductor materials and the innovation of new electronic device concepts are of fundamental importance in developing the future generation computation and communications technology. The research activities in this program aim to develop the foundation of the electronics technology based on the emerging semiconductor material black phosphorus and related two-dimensional materials, which can benefit many transformative technological fields utilizing low power, reconfigurable and adaptive electronic systems. This project will develop a critical knowledge base for the study of the fundamental electronic properties of black phosphorus and the exploration of novel device functionalities for applications in computation and communications. Furthermore, the program will also offer valuable research opportunities for training the next generation workforce for the semiconductor industry by exposing graduate students, as well as undergraduate and high school students, to a wide range of research opportunities with both the university research facilities and the industrial collaborator. This project will also enhance the participation of woman and underrepresented students in semiconductor electronics research. The scientific results will be disseminated through the use of scientific community website dedicated to education and research, such as nanoHUB, to share the research outcomes with the general scientific community and made them available for educational use.Recently rediscovered black phosphorus has shown promising potential for electronic applications. With its tunable energy gap, as well as strong ambipolar conduction resulting from its moderate bandgap (0.3 eV in bulk), the material offers attractive features for exploring new semiconductor device concept for electronics application. On the other hand, despite of promising potentials, major challenges exist on translating early science of black phosphorus materials into advanced device technologies. Novel device concepts unique to black phosphorus materials, as well as their fabrication technology, remain largely under-developed. Experimental demonstrations and design innovations of devices based on black phosphorus that may lead to novel functionalities, especially with re-configurability in its operational characteristics, remain rare. The objective of this CAREER program is to reveal the tunable electronic properties of black phosphorus such as electrostatic tuning of its bandgap and ambipolar conduction, and to build transformative devices for applications in electronics. The proposed research program includes the following activities: (1) utilize electronic and optical characterization techniques to evaluate bandgap tuning and carrier transport properties in black phosphorus, (2) devise novel device concepts, leveraging tunable properties in black phosphorus, such as the ambipolar conduction, and (3) benchmark black phosphorus device performance with the current state-of-the-art, and evaluate the new functionalities these devices can enable, (4) develop theoretical device models to predict and guide basic device physics research.

半导体电子技术在使许多电子系统从计算机到智能手机的计算和通信应用中起着至关重要的作用。对新的半导体材料的研究和新电子设备概念的创新对于开发未来一代计算和通信技术至关重要。该计划中的研究活动旨在基于新兴的半导体材料黑色磷和相关的二维材料来开发电子技术的基础，这些材料可以利用低功率，可重新配置和适应性电子系统的许多变革性技术领域。该项目将为研究黑磷的基本电子特性以及在计算和通信中应用新型设备功能的探索而建立关键的知识库。此外，该计划还将为培训半导体行业的下一代劳动力提供宝贵的研究机会，通过将研究生以及本科生和高中生揭露与大学研究设施和工业合作者的广泛研究机会。该项目还将增强女性和代表性不足的学生参与半导体电子研究。科学的结果将通过使用专门用于教育和研究的科学界网站（例如纳米hub）与一般科学界分享研究成果，并使其可用于教育用途，从而传播科学结果。重新发现了电子应用的潜在潜力。借助其适度的带隙（批量0.3 eV）产生的可调能隙以及强大的双极传导，该材料为探索电子应用程序应用的新半导体设备概念提供了吸引人的功能。另一方面，尽管具有有希望的潜力，但仍在将黑磷材料的早期科学转化为先进的设备技术方面存在重大挑战。黑色磷材料独有的新型设备概念及其制造技术在很大程度上仍然不发达。基于黑色磷的设备的实验演示和设计创新，可能导致新的功能，尤其是在其操作特征中重新配置性的功能，这仍然很少见。该职业计划的目的是揭示黑色磷的可调电子性能，例如其带隙和双极传导的静电调整，并为电子设备的应用构建变换设备。 The proposed research program includes the following activities: (1) utilize electronic and optical characterization techniques to evaluate bandgap tuning and carrier transport properties in black phosphorus, (2) devise novel device concepts, leveraging tunable properties in black phosphorus, such as the ambipolar conduction, and (3) benchmark black phosphorus device performance with the current state-of-the-art, and evaluate the new functionalities these devices can enable, （4）开发理论设备模型来预测和指导基本的设备物理研究。

项目成果

Black phosphorus and its isoelectronic materials

• DOI: 10.1038/s42254-019-0043-5
• 发表时间: 2019-05-01
• 期刊: NATURE REVIEWS PHYSICS
• 影响因子: 38.5
• 作者: Xia, Fengnian;Wang, Han;Yang, Li
• 通讯作者: Yang, Li

Imperfection-enabled memristive switching in van der Waals materials

• DOI: 10.1038/s41928-023-00984-2
• 发表时间: 2023-07
• 期刊: Nature Electronics
• 影响因子: 34.3
• 作者: Mengjiao Li;Hefei Liu;Ruoyu Zhao;Feng‐Shou Yang;Mingrui Chen;Ye Zhuo;Chongwu Zhou;Han Wang

Giant optical anisotropy in a quasi-one-dimensional crystal

• DOI: 10.1038/s41566-018-0189-1
• 发表时间: 2018-07-01
• 期刊: NATURE PHOTONICS
• 影响因子: 35
• 作者: Niu, Shanyuan;Joe, Graham;Ravichandran, Jayakanth
• 通讯作者: Ravichandran, Jayakanth

Recent Progress on Stability and Passivation of Black Phosphorus

• DOI: 10.1002/adma.201704749
• 发表时间: 2018-07-19
• 期刊: ADVANCED MATERIALS
• 影响因子: 29.4
• 作者: Abate, Yohannes;Akinwande, Deji;Cronin, Stephen B.
• 通讯作者: Cronin, Stephen B.

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

• DOI: 10.1109/ted.2017.2759124
• 发表时间: 2017-12-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Esqueda, Ivan S.;Tian, He;Wang, Han
• 通讯作者: Wang, Han