FET: Small: Modeling, Simulation, and Design for Robustness and Performance in Semiconductor-Based Quantum Computing

FET：小型：基于半导体的量子计算的鲁棒性和性能的建模、仿真和设计

• 批准号: 2007200
• 负责人: Jing Guo
• 金额: $ 49.72万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-10-01 至 2024-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2007200&HistoricalAwards=false
• 关键词: FET; Small; Modeling; Simulation; Design

Quantum computing has the potential to eventually revolutionize computing technologies and impact many research fields as well as daily life, including discovery of new materials, design of new drugs, financial modeling, security and cryptography, and artificial intelligence. Among various approaches for hardware realization of quantum computing, semiconductor-based quantum computing has the advantage to harvest and leverage the vast infrastructure and success of the semiconductor chip industry, which promises low cost and small size. Significant challenges, however, remain to controllably and precisely entangle semiconductor spin quantum bits (qubits), transmit quantum information between them, and eventually realize a large-scale semiconductor quantum computer. In this project, new simulation methods and computer-aided design (CAD) frameworks will be developed to address key hardware design challenges in semiconductor-based quantum computing. Simulation and design tools will be developed and disseminated online to extensively support the education and research activities in semiconductor quantum computing. By developing new curriculum and engaging students from high school to graduate levels, the project also contributes to addressing the challenge of educating a new generation of quantum workforce.The project aims to: (i) develop a multiscale simulation framework that incorporates 3D technology CAD simulations into physics-based models for semiconductor quantum gates; (ii) develop a modeling and simulation framework for quantum interconnects between semiconductor spin qubits mediated by a photon channel via strongly coupled spin-photon interfaces; (iii) simulate decoherence mechanisms in semiconductor quantum gates and develop methods to minimize their impact; and (iv) model the variability and defect mechanisms and their correlations in semiconductor quantum gates and circuits, and translate insights gained from variability and defect-aware simulations to techniques for mitigating the variability effects. This project will advance modeling and simulation capabilities and develop an essential knowledge base for designing semiconductor-based quantum computing hardware with enhanced speed, fidelity, integration density, and reliability.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

量子计算有潜力最终彻底改变计算技术，影响许多研究领域和日常生活，包括新材料的发现、新药物的设计、金融建模、安全和密码学以及人工智能。在量子计算硬件实现的各种方法中，基于半导体的量子计算具有收获和利用半导体芯片行业庞大的基础设施和成功的优势，这有望实现低成本和小尺寸。然而，如何可控且精确地纠缠半导体自旋量子位（量子位），在它们之间传输量子信息，并最终实现大规模半导体量子计算机，仍然存在重大挑战。在该项目中，将开发新的模拟方法和计算机辅助设计（CAD）框架，以解决基于半导体的量子计算中的关键硬件设计挑战。将开发和在线传播模拟和设计工具，以广泛支持半导体量子计算的教育和研究活动。通过开发新课程并吸引从高中到研究生水平的学生，该项目还有助于应对教育新一代量子劳动力的挑战。该项目旨在：（i）开发一个包含 3D 技术 CAD 模拟的多尺度模拟框架半导体量子门的基于物理的模型； (ii) 开发一个建模和模拟框架，用于半导体自旋量子位之间的量子互连，该互连由光子通道通过强耦合自旋光子界面介导； (iii) 模拟半导体量子门中的退相干机制并开发方法以尽量减少其影响； (iv) 对半导体量子门和电路中的变异性和缺陷机制及其相关性进行建模，并将从变异性和缺陷感知模拟中获得的见解转化为减轻变异性影响的技术。该项目将提高建模和仿真能力，并为设计基于半导体的量子计算硬件开发必要的知识库，提高速度、保真度、集成密度和可靠性。该奖项反映了 NSF 的法定使命，并通过评估被认为值得支持基金会的智力价值和更广泛的影响审查标准。

项目成果

A Quantum-Computing-Based Method for Solving Quantum Confinement Problem in Semiconductor

一种基于量子计算的解决半导体量子限制问题的方法

• DOI: 10.1109/ted.2023.3234887
• 发表时间: 2023
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Yang, Ning;Guo, Jing
• 通讯作者: Guo, Jing

A Multiscale Simulation Approach for Germanium-Hole-Based Quantum Processor

• DOI: 10.1109/tcad.2022.3166107
• 发表时间: 2022-07
• 期刊: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
• 影响因子: 2.9
• 作者: Tong Wu;Jing Guo

Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps

由于随机界面电荷陷阱而导致的硅量子门的可变性和保真度限制

• DOI: 10.1109/led.2020.2997009
• 发表时间: 2020
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Wu, Tong;Guo, Jing
• 通讯作者: Guo, Jing

Performance assessment of quantum processor based on p-type Semiconductor quantum dot array

基于p型半导体量子点阵列的量子处理器性能评估

• 发表时间: 2022
• 期刊: IEEE International Conference on Quantum Computing and Engineering
• 作者: Tong Wu, Wenrui Zhang