Integrated quantum photonics using van der Waals materials

使用范德华材料的集成量子光子学

• 批准号: 1906096
• 负责人: Vinod Menon
• 金额: $ 38.62万
• 依托单位: CUNY City College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-01 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1906096&HistoricalAwards=false
• 关键词: Integrated; quantum; photonics; using; van

Technologies that rely on and exploit the quantum properties of light and matter are touted as the next phaseof the modern industrial revolution. Light has become the preferred medium for information transfer inquantum technologies due to its high speed and exceptional noise properties, with single photons acting asthe most basic building blocks. However, the realization of robust, device-compatible, room-temperaturesingle photon sources that can be activated and controlled on demand has been a major hurdle. Althoughthere have been different material systems that have shown single photon emission, they operate at lowtemperature or at incompatible wavelengths, and are often hard to integrate with conventional photonicmaterials or CMOS technology. To address this challenge, this project aims to develop single photonemitters based on cavity-coupled van der Waals (vdW) materials. Specifically, the program will focus onhexagonal boron nitride, a wide bandgap semiconductor that can host optically active point defects withemission in the visible and near infra-red. Combining defect engineering and "pick-and-place" techniques,the project will develop a range of light-confining hybrid structures designed to enhance light collectionand light emission from single photon emitters as well as increase the strength of light-matter interaction.The overarching goal is to develop the key building blocks for realizing quantum photonic devices basedon vdW materials.Technical Abstract:The development of quantum photonic technologies that can operate at elevated temperatures, are CMOScompatible, and can be integrated with conventional photonics is highly desirable. This project addressesprecisely this need through the use of monolayer or few-layer vdW materials integrated with siliconnitride photonic platforms where we exploit the unique strengths of the two material systems. vdWmaterials are a highly attractive platform for active components in quantum photonics due their largelight-mater interaction strength, compatibility with a variety of substrates, and pick-and-place fabricationtechniques. In particular, hexagonal boron nitride has a wide bandgap (6 eV), which allows for a broadlyaccessible spectral range and mid gap defect states. Furthermore, owing to the few-layer vdW structure,these systems show extreme susceptibility to strain and the dielectric environment, which will beexploited to control defect activation and integration with nanophotonic structures such as microresonatorsand waveguides. Silicon nitride, already recognized as an excellent material for passivephotonic devices due to its low loss and mature fabrication protocols will form the platform for realizingthe quantum photonic chips. Specific program goals include: (i) Deterministic engineering of defectstates in hBN for single photon emission, and (ii) Integration of emitters into micro-resonators and hybridcavity systems for enhancing spontaneous emission and achieving the strong coupling regime.The program will help train students from diverse backgrounds in the emerging interdisciplinary field ofquantum optoelectronics. A highlight among the planned outreach activities is a hands-on quantumtechnologies workshop for undergraduate students at City College.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

依靠和利用光和物质的量子特性的技术被吹捧为现代工业革命的下一个阶段。由于其高速和出色的噪声特性，光已成为信息传输询问技术的首选介质，其单光子充当最基本的构建块。但是，可以实现可激活和按需控制和控制的强大，兼容设备，室温的光子源是一个主要障碍。尽管有不同的材料系统已经显示出单个光子发射，但它们以低温或不兼容的波长运行，并且通常很难与常规的光子材料或CMOS技术集成。为了应对这一挑战，该项目旨在基于腔耦合范德华（VDW）材料开发单个光子发射机。具体而言，该程序将集中于nitride odhexagonal硼，这是一种宽带隙半导体，可以在可见的和接近红外线中托管发光点缺陷。结合缺陷工程和“拾取”技术，该项目将开发一系列灯具的杂种结​​构，旨在增强单个光子发射器的光收集和光发射，并提高光线相互作用的强度。总体目标是开发基于量子的Photect pontechnical pontechnical apppertions的关键构件。温度是CMOSCompat的，并且可以与常规光子学集成在一起。该项目通过使用与硅硝酸盐光子平台集成的单层或几层VDW材料来解决这一需求，在那里我们利用了两个材料系统的独特优势。 VDWMaterials是量子光子学中主动组件的高度吸引力平台，因为它们的宽大材料相互作用强度，与各种底物的兼容性以及拾音器制造技术的兼容性。特别是，六角硼硝化硼具有宽带的带隙（6 eV），可允许宽广的光谱范围和中间隙缺陷状态。此外，由于几层VDW结构，这些系统显示出对应变和介电环境的极端敏感性，该系统将被探索以控制缺陷激活并与纳米光子结构（如微孔仪和波导）进行整合。氮化硅由于其低损失和成熟的制造方案而被公认为是无源源源设备的出色材料，将构成实现量子光子芯片的平台。特定的计划目标包括：（i）单个光子发射中HBN缺陷的确定性工程，以及（ii）将发射器集成到微谐振器和杂交系统中，以增强自发排放并实现强大的耦合方案。该计划将帮助从各种背景的emering emering emerering Interivily Interrory intemectron中训练学生。计划中的外展活动中的一个亮点是城市学院本科生的动手量子技术研讨会。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛影响的评估标准来通过评估来支持的。

项目成果

Investigation of photon emitters in Ce-implanted hexagonal boron nitride

• DOI: 10.1364/ome.434083
• 发表时间: 2021-09
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: Gabriel I. L'opez-Morales;Mingxing Li;A. Hampel;S. Satapathy;N. Proscia;H. Jayakumar;A. Lozovoi;D. Pagliero;G. López;V. Menon;Johannes Flick;C. Meriles

Room-temperature single photon emitters in cubic boron nitride nanocrystals

立方氮化硼纳米晶体中的室温单光子发射器

• DOI: 10.1364/ome.386791
• 发表时间: 2020
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: López-Morales, Gabriel I.;Almanakly, Aziza;Satapathy, Sitakanta;Proscia, Nicholas V.;Jayakumar, Harishankar;Khabashesku, Valery N.;Ajayan, Pulickel M.;Meriles, Carlos A.;Menon, Vinod M.
• 通讯作者: Menon, Vinod M.

Ab-initio investigation of Er3+ defects in tungsten disulfide

• DOI: 10.1016/j.commatsci.2021.111041
• 发表时间: 2021-11
• 期刊: Computational Materials Science
• 影响因子: 3.3
• 作者: Gabriel I. L'opez-Morales;A. Hampel;G. López;V. Menon;Johannes Flick;C. Meriles

Microcavity-coupled emitters in hexagonal boron nitride

• DOI: 10.1515/nanoph-2020-0187
• 发表时间: 2019-06
• 期刊: Nanophotonics
• 影响因子: 7.5
• 作者: N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon

Optical isolator based on chiral light-matter interactions in a ring resonator integrating a dichroic magneto-optical material

• DOI: 10.1063/5.0057558
• 发表时间: 2021-06-14
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Kawaguchi, Yuma;Li, Mengyao;Khanikaev, Alexander B.
• 通讯作者: Khanikaev, Alexander B.