Collaborative Research: Wafer-Scale Nanomanufacturing of 2D Atomic Layer Material Heterostructures Through Exfoliation and Transfer

合作研究：通过剥离和转移进行二维原子层材料异质结构的晶圆级纳米制造

• 批准号: 1825256
• 负责人: Kyusang Lee
• 金额: $ 22.25万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-08-15 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1825256&HistoricalAwards=false
• 关键词: Collaborative; Research; Wafer; Scale; Nanomanufacturing

Two-dimensional atomic layer materials are strong candidate materials for semiconductor and energy device technologies. When stacked together three-dimensional heterogeneous nanostructures are formed. Owing to weak vertical interaction between two-dimensional materials, their heterostructures display unique device functionality and novel physical phenomena. However, it has been extremely challenging to fabricate such two-dimensional building blocks and three-dimensional heterostructures from them due to a lack of methodology to control layer numbers and limited manufacturing scale. This award supports both modeling and experimental research to develop a low-cost nanomanufacturing process of wafer-scale two-dimensional materials-based heterostructures through exfoliation and transfer. This technology offers unique features of enabling preparation of a wide range of freestanding monolayer two-dimensional materials and providing the potential for heterogeneous integration at wafer-scale. The success of this project broadly impacts high performance, atomically-thin semiconductor device technologies, such as new transistors, solar cells, light emitting diodes (LEDs), photodetectors, lasers, and sensors that could touch every aspect of daily life. Therefore, results from this research benefits both the U.S. economy and society. The project's broader impacts plans involve learning to apply textbook theories to industrial applications through intensive nano-engineering lab modules, which includes results from the exfoliation and transfer process to fabricate heterostructures of 2D materials. The proposed Layer Resolved Splitting (LRS) process enables manufacturing of wafer-scale heterogeneously integrated two-dimensional (2D) atomic layer building blocks by precisely controlling the exfoliation and transfer of a wide variety of 2D materials. The research team demonstrates the feasibility of the LRS technique to manufacture multiple monolayer materials at wafer-scale by performing "one growth" of multiple layers of 2D materials on the wafer. Furthermore, the proposed dry stacking process substantially improves the performance of wafer-scale heterostructures compared to heterostructures prepared by wet stacking. Eventually, this project opens up new opportunities in 2D materials research by providing a reliable platform to manufacture monolayer-resolved wafer-scale 3D heterostructures.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

二维原子层材料是用于半导体和能量设备技术的强候选材料。当将三维异质纳米结构堆叠在一起时。由于二维材料之间的垂直相互作用弱，其异质结构显示出独特的装置功能和新颖的物理现象。但是，由于缺乏控制层数和有限的制造规模的方法，因此从它们制造此类二维构建块和三维异质结构一直是极具挑战性的。该奖项支持建模和实验研究，以通过去角质和转移来开发晶圆尺度基于二维材料的异质结构的低成本纳米制造过程。这项技术提供了独特的功能，可以为各种独立的单层二维材料制备准备，并在晶圆尺度提供了异质整合的潜力。该项目的成功广泛影响了高性能，原子上薄的半导体设备技术，例如新晶体管，太阳能电池，发光二极管（LED），光电探测器，激光器和传感器，这些传感器和传感器可能会触及日常生活的各个方面。因此，这项研究的结果使美国经济和社会受益。该项目的更广泛的影响计划包括学习通过密集的纳米工程实验室模块将教科书理论应用于工业应用，其中包括剥落和转移过程的结果，以制造2D材料的异质结构。提出的层解析分解（LRS）过程使制造晶圆尺度的异质整合的二维（2D）原子层构建块，通过精确控制多种2D材料的去角质和转移。研究小组展示了LRS技术在晶圆尺度上生产多种单层材料的可行性，该材料通过在晶圆上执行多层2D材料的“一种生长”。此外，与通过湿堆放制备的异质结构相比，提出的干堆积过程显着改善了晶圆尺度异质结构的性能。最终，该项目通过提供一个可靠的平台来制造单层分辨的晶圆尺度3D异质结构，从而为2D材料研究开辟了新的机会。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛影响的审查标准来通过评估来通过评估来支持的。

项目成果

Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides

• DOI: 10.1103/physrevb.101.174309
• 发表时间: 2020-05
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Sangwan Sim;Doeon Lee;Jekwan Lee;Myungjun Cha;Soonyoung Cha;Wonhyeok Heo;Sungjun Cho;W. Shim;Kyusang Lee;Jinkyoung Yoo;R. Prasankumar;Hyunyong Choi;M. Jo

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

• DOI: 10.1126/science.aat8126
• 发表时间: 2018-11-09
• 期刊: SCIENCE
• 影响因子: 56.9
• 作者: Shim, Jaewoo;Bae, Sang-Hoon;Kim, Jeehwan
• 通讯作者: Kim, Jeehwan