Collaborative Research: Wafer-Scale Nanomanufacturing of 2D Atomic Layer Material Heterostructures Through Exfoliation and Transfer

合作研究：通过剥离和转移进行二维原子层材料异质结构的晶圆级纳米制造

• 批准号: 1825256
• 负责人: Kyusang Lee
• 金额: $ 22.25万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-08-15 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1825256&HistoricalAwards=false
• 关键词: Collaborative; Research; Wafer; Scale; Nanomanufacturing

Two-dimensional atomic layer materials are strong candidate materials for semiconductor and energy device technologies. When stacked together three-dimensional heterogeneous nanostructures are formed. Owing to weak vertical interaction between two-dimensional materials, their heterostructures display unique device functionality and novel physical phenomena. However, it has been extremely challenging to fabricate such two-dimensional building blocks and three-dimensional heterostructures from them due to a lack of methodology to control layer numbers and limited manufacturing scale. This award supports both modeling and experimental research to develop a low-cost nanomanufacturing process of wafer-scale two-dimensional materials-based heterostructures through exfoliation and transfer. This technology offers unique features of enabling preparation of a wide range of freestanding monolayer two-dimensional materials and providing the potential for heterogeneous integration at wafer-scale. The success of this project broadly impacts high performance, atomically-thin semiconductor device technologies, such as new transistors, solar cells, light emitting diodes (LEDs), photodetectors, lasers, and sensors that could touch every aspect of daily life. Therefore, results from this research benefits both the U.S. economy and society. The project's broader impacts plans involve learning to apply textbook theories to industrial applications through intensive nano-engineering lab modules, which includes results from the exfoliation and transfer process to fabricate heterostructures of 2D materials. The proposed Layer Resolved Splitting (LRS) process enables manufacturing of wafer-scale heterogeneously integrated two-dimensional (2D) atomic layer building blocks by precisely controlling the exfoliation and transfer of a wide variety of 2D materials. The research team demonstrates the feasibility of the LRS technique to manufacture multiple monolayer materials at wafer-scale by performing "one growth" of multiple layers of 2D materials on the wafer. Furthermore, the proposed dry stacking process substantially improves the performance of wafer-scale heterostructures compared to heterostructures prepared by wet stacking. Eventually, this project opens up new opportunities in 2D materials research by providing a reliable platform to manufacture monolayer-resolved wafer-scale 3D heterostructures.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

二维原子层材料是半导体和能源器件技术的有力候选材料。当堆叠在一起时，形成三维异质纳米结构。由于二维材料之间的弱垂直相互作用，它们的异质结构表现出独特的器件功能和新颖的物理现象。然而，由于缺乏控制层数的方法和有限的制造规模，制造这种二维构建块和三维异质结构一直极具挑战性。该奖项支持建模和实验研究，通过剥离和转移开发晶圆级二维材料异质结构的低成本纳米制造工艺。该技术具有独特的功能，可以制备各种独立的单层二维材料，并提供晶圆级异构集成的潜力。该项目的成功广泛影响了高性能、原子薄半导体器件技术，例如新型晶体管、太阳能电池、发光二极管 (LED)、光电探测器、激光器和传感器，这些技术可能涉及日常生活的各个方面。因此，这项研究的结果对美国经济和社会都有好处。该项目更广泛的影响计划包括通过密集的纳米工程实验室模块学习将教科书理论应用于工业应用，其中包括制造二维材料异质结构的剥离和转移过程的结果。所提出的层解析分裂（LRS）工艺通过精确控制各种2D材料的剥离和转移，能够制造晶圆级异构集成二维（2D）原子层构建块。研究团队展示了LRS技术通过在晶圆上进行多层2D材料的“一次生长”来在晶圆级制造多种单层材料的可行性。此外，与湿法堆叠制备的异质结构相比，所提出的干法堆叠工艺显着提高了晶圆级异质结构的性能。最终，该项目通过提供可靠的平台来制造单层分辨晶圆级 3D 异质结构，为 2D 材料研究开辟了新的机遇。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力优势和更广泛的评估进行评估，被认为值得支持。影响审查标准。

项目成果

Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides

• DOI: 10.1103/physrevb.101.174309
• 发表时间: 2020-05
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Sangwan Sim;Doeon Lee;Jekwan Lee;Myungjun Cha;Soonyoung Cha;Wonhyeok Heo;Sungjun Cho;W. Shim;Kyusang Lee;Jinkyoung Yoo;R. Prasankumar;Hyunyong Choi;M. Jo

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

• DOI: 10.1126/science.aat8126
• 发表时间: 2018-11-09
• 期刊: SCIENCE
• 影响因子: 56.9
• 作者: Shim, Jaewoo;Bae, Sang-Hoon;Kim, Jeehwan
• 通讯作者: Kim, Jeehwan