CAREER: Van der Waals-mediated epitaxy of Heusler compounds through properties-selective, atomically thin barriers

职业：范德华介导的 Heusler 化合物通过特性选择性、原子级薄壁垒的外延

• 批准号: 1752797
• 负责人: Jason Kawasaki
• 金额: $ 70万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-04-01 至 2023-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1752797&HistoricalAwards=false
• 关键词: CAREER; Van; der; Waals; mediated

Non-technical summary Modern electronics rely on precisely controlled interfaces between crystalline semiconducting materials. Achieving this remains a challenge. This project, supported by the Solid State and Materials Chemistry Program in the Division of Materials Research, researches fundamentally new ways to fabricate such interfaces of magnetic materials and control them at the smallest length scale possible (atomic resolution). Focusing on a class of materials called Heusler compounds, the project explores the mechanisms for single-crystalline growth on atomically thin barrier materials. Application of these materials in energy-efficient magnetic and thermoelectric devices is also tested. The research efforts are integrated with an after-school workshop for middle-school students. "From atoms to iPhone: the science of materials and their applications in everyday life." is a workshop that engages young students in materials science and engineering topics through the lens of a common application, the smartphone. The principle investigator and his group carry out work with the SCIENCountErs program at the Boys and Girls Club of Dane County on this. Technical summaryThis project is supported by the Solid State and Materials Chemistry Program in the Division of Materials Research and aims to uncover and develop fundamentally new ways to control the transmission of ions, charge, and spins across Heusler interfaces. Heusler compounds have long been proposed as ideal materials for semiconductor spintronics and a platform for discovery and manipulation of topological quantum states of matter. However, interdiffusion across the Heusler/semiconductor interface has inhibited these realizations, since atomically sharp and stable epitaxial interfaces are required. This project addresses these challenges through the use atomically thin barrier materials such as graphene, where the barrier material serves as (1) a diffusion barrier, (2) a transparent decoupling layer for epitaxial alignment between film and substrate, and (3) a tunnel barrier for efficient charge and spin transport across the interface. By pairing highly controlled Heusler synthesis by molecular beam epitaxy (MBE) with in-situ spectroscopic tools, model experiments are being used to reveal the mechanisms for Van der Waals-mediated epitaxy and develop methods for the atomically controlled fabrication of Heusler interfaces. Fundamental insights from the research component are integrated into real life demonstrations for the "Atoms to iPhone" workshop and integrated into undergraduate and graduate courses taught by the principle investigator. First hand research experiences for undergraduate and graduate students provide a training ground for careers in STEM and related fields.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术摘要 现代电子产品依赖于晶体半导体材料之间精确控制的界面。实现这一目标仍然是一个挑战。该项目得到了材料研究部固态和材料化学项目的支持，研究了制造磁性材料界面并以尽可能小的长度尺度（原子分辨率）控制它们的全新方法。该项目重点关注一类称为霍斯勒化合物的材料，探索原子薄势垒材料上单晶生长的机制。还测试了这些材料在节能磁性和热电设备中的应用。研究工作与中学生课后研讨会相结合。 “从原子到 iPhone：材料科学及其在日常生活中的应用。”是一个研讨会，通过智能手机这一常见应用程序的视角，让年轻学生参与材料科学和工程主题。首席研究员和他的团队与戴恩县男孩女孩俱乐部的 SCIENCountErs 项目合作开展这方面的工作。技术摘要该项目得到了材料研究部固态和材料化学项目的支持，旨在发现和开发控制离子、电荷和自旋跨赫斯勒界面传输的全新方法。赫斯勒化合物长期以来一直被认为是半导体自旋电子学的理想材料以及发现和操纵物质拓扑量子态的平台。然而，由于需要原子级锐利且稳定的外延界面，因此跨赫斯勒/半导体界面的相互扩散抑制了这些实现。该项目通过使用原子薄势垒材料（例如石墨烯）来解决这些挑战，其中势垒材料充当（1）扩散势垒，（2）用于薄膜和基板之间外延对准的透明去耦层，以及（3）隧道跨界面有效电荷和自旋传输的势垒。通过将分子束外延 (MBE) 高度控制的赫斯勒合成与原位光谱工具相结合，模型实验被用来揭示范德华介导的外延机制，并开发原子控制制造赫斯勒界面的方法。研究部分的基本见解被整合到“Atoms to iPhone”研讨会的现实生活演示中，并整合到首席研究员教授的本科生和研究生课程中。本科生和研究生的第一手研究经验为 STEM 及相关领域的职业生涯提供了训练场。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Electronically enhanced layer buckling and Au-Au dimerization in epitaxial LaAuSb films

外延 LaAuSb 薄膜中的电子增强层屈曲和 Au-Au 二聚化

• DOI: 10.1103/physrevmaterials.3.024201
• 发表时间: 2019-01-25
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: P. J. Strohbeen;Dongxue Du;Chenyu Zhang;Estiaque H. Shourov;F. Rodolakis;J. McChesney;P. Voyles;J. Kawasaki
• 通讯作者: J. Kawasaki

Strain and strain gradient engineering in membranes of quantum materials

• DOI: 10.1063/5.0146553
• 发表时间: 2023-02-14
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Dongxue Du;Jiamian Hu;J. Kawasaki
• 通讯作者: J. Kawasaki

Electronic correlations in the semiconducting half-Heusler compound FeVSb

半导体半赫斯勒化合物 FeVSb 中的电子相关性

• DOI: 10.1103/physrevb.103.045134
• 发表时间: 2020-09-24
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Estiaque H. Shourov;P. J. Strohbeen;Dongxue Du;A. Sharan;F. C. de Lima;F. Rodolakis;J. McChesney;V. Yannello;A. Janotti;T. Birol;J. Kawasaki
• 通讯作者: J. Kawasaki

The Role of Surface Oxygen Vacancies in BiVO 4

BiVO 4 中表面氧空位的作用

• DOI: 10.1021/acs.chemmater.9b05047
• 发表时间: 2020-04
• 期刊: Chemistry of Materials
• 影响因子: 8.6
• 作者: Wang, Wennie;Strohbeen, Patrick James;Lee, Dongho;Zhou, Chenyu;Kawasaki, Jason Ken;Choi, Kyoung;Liu, Mingzhao;Galli, Giulia
• 通讯作者: Galli, Giulia

Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes

波纹赫斯勒膜中的外延、剥离和应变感应磁性

• DOI: 10.1038/s41467-021-22784-y
• 发表时间: 2021-05-03
• 期刊: Nature Communications
• 影响因子: 16.6
• 作者: Du D;Manzo S;Zhang C;Saraswat V;Genser KT;Rabe KM;Voyles PM;Arnold MS;Kawasaki JK
• 通讯作者: Kawasaki JK