EAGER: MOCVD Growth of beta-(Al,In,Ga)2O3 for Transistor Applications

EAGER：用于晶体管应用的 β-(Al,In,Ga)2O3 的 MOCVD 生长

• 批准号: 1748339
• 负责人: Manijeh Razeghi
• 金额: $ 15万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1748339&HistoricalAwards=false
• 关键词: EAGER; MOCVD; Growth; beta; Al

EAGER: MOCVD Growth of a new wide-bandgap oxide semiconductor for Transistor ApplicationsAbstractNontechnical: Ga2O3 is a new wide-bandgap oxide semiconductor material which is anticipated to allow a 10 to 100x improvement in transistor power density over current high performance silicon carbide transistors. The development of Ga2O3 for transistor applications will allow an unprecedented level of performance in applications that require high total continuous-wave power and efficiency. Solidstate lighting and solar energy harvesting are two areas that will directly benefit from the development of this technology. High power density transistors are used to efficiently convert the direct current (DC) voltage generated by solar panels into alternating current (AC) power that can be feed into the existing grid. Similarly, high power density transistors are used to control the DC current used to drive the light emitting diodes using in solid state lighting. There are also applications for very these high power density transistors in the direct current (DC) power transmission lines that join different electrical grids across the globe. In order to achieve these results the proposed fundamental study of (Al,In,Ga)2O3 materials for transistor applications is highly needed. Technical: The objective of this proposal is to study the metal organic chemical vapor deposition growth of â-Ga2O3 and related compounds such as â-(AlxGa1-x)2O3, â-(InxGa1-x)2O3, and â-(AlxInyGa1-x-y)2O3. This group has extensive experience in the growth of III-Nitrides'a similar wide bandgap material system and has recently shown promising results by applying that experience to the growth of Ga2O3. We are proposing to undertake a 2 year comprehensive study of the material growth. In addition to this fundamental study we will also apply the material improvements to the development of transistors based on this material system. The core elements of this project are: (1) development of a fundamental understanding of the metal organic chemical vapor deposition growth of â-(Al,In,Gay)2O3; (2) Demonstrating effective doping of this wide bandgap material; (3) Demonstration of the ability to realize high quality hetero-interfaces; (4) Using the doping and hetero-interface engineering to realize high mobility layers; and, (5) using all of that to demonstrate high performance transistors. The principal investigator's background is extremely well matched to the proposed research, and all the required resources and expertise are available.

EAGER：用于晶体管应用的新型宽带隙氧化物半导体的 MOCVD 生长摘要非技术：Ga2O3 是一种新型宽带隙氧化物半导体材料，预计其晶体管功率密度将比当前高性能碳化硅晶体管提高 10 至 100 倍。用于晶体管应用的 Ga2O3 将在需要高总连续波功率和效率的应用中实现前所未有的性能水平。太阳能发电是直接受益于该技术发展的两个领域，高功率密度晶​​体管用于有效地将太阳能电池板产生的直流（DC）电压转换为可馈入现有电网的交流（AC）电力。类似地，高功率密度晶​​体管用于控制用于驱动固态照明中的发光二极管的直流电流，这些高功率密度晶​​体管也应用于连接的直流（DC）电力传输线中。全球不同的电网。为了实现这些结果，非常需要对用于晶体管应用的 (Al,In,Ga)2O3 材料进行基础研究。 技术：本提案的目的是研究 a-Ga2O3 和相关化合物的金属有机化学气相沉积生长。例如-(AlxGa1-x)2O3、-(InxGa1-x)2O3和-(AlxInyGa1-x-y)2O3，该小组在生长方面拥有丰富的经验。 III-氮化物是一种类似的宽带隙材料系统，最近通过将该经验应用于 Ga2O3 的生长而显示出有希望的结果。除了这项基础研究之外，我们还将对材料生长进行为期 2 年的全面研究。将材料改进应用于基于该材料系统的晶体管的开发，该项目的核心要素是：（1）对a-(Al,In,Gay)2O3的金属有机化学气相沉积生长有一个基本的了解。 ; (2) 展示这种宽带隙材料的有效掺杂； (3) 展示实现高质量异质界面的能力； (4) 使用掺杂和异质界面工程来实现高迁移率层；所有这些都是为了展示高性能晶体管。首席研究员的背景与拟议的研究非常匹配，并且所有所需的资源和专业知识都可用。

项目成果

The new oxide paradigm for solid state ultraviolet photodetectors

固态紫外光电探测器的新氧化物范例

• DOI: 10.1117/12.2319505
• 发表时间: 2018-03
• 期刊: Oxide-based Materials and Devices IX
• 作者: Sandana, Vinod E.;McClintock, Ryan;Razeghi, Manijeh;Harel, Shlomo;Arrateig, X.;Rogers, David J.;Bove, Philippe;Teherani, Ferechteh H.;Frisch, Eran;Teherani, Ferechteh H.;et al
• 通讯作者: et al

A review of the growth, doping, and applications of Beta-Ga2O3 thin films

Beta-Ga2O3 薄膜的生长、掺杂和应用综述

• DOI: 10.1117/12.2302471
• 发表时间: 2018-03
• 期刊: Oxide-based Materials and Devices IX
• 作者: Teherani, Ferechteh H.;Khodaparast, Giti A.;Xu, Yaobin V.;Wu, Jinsong;Dravid, Vinayak P.;Pavlidis, Dimitris;Razeghi, Manijeh;McClintock, Ryan;Rogers, David J.;Park, Ji;et al
• 通讯作者: et al

Strain-Induced Metastable Phase Stabilization in Ga 2 O 3 Thin Films

Ga 2 O 3 薄膜中应变诱导的亚稳态相稳定

• DOI: 10.1021/acsami.8b17731
• 发表时间: 2019-01
• 期刊: ACS Applied Materials & Interfaces
• 影响因子: 9.5
• 作者: Xu, Yaobin;Park, Ji;Yao, Zhenpeng;Wolverton, Chris;Razeghi, Manijeh;Wu, Jinsong;Dravid, Vinayak P.
• 通讯作者: Dravid, Vinayak P.

Imprinting of nanoporosity in lithium-doped nickel oxide through the use of sacrificial zinc oxide nanotemplates

通过使用牺牲氧化锌纳米模板在锂掺杂氧化镍中压印纳米孔隙

• DOI: 10.1117/12.2263713
• 发表时间: 2017-04
• 期刊: SPIE Proceedings
• 作者: Teherani, Ferechteh H.;Look, David C.;Rogers, David J.;Sandana, Vinod E.;Rogers, David J.;Teherani, Ferechteh H.;Bove, Philippe;McClintock, Ryan;Razeghi, Manijeh
• 通讯作者: Razeghi, Manijeh

MOCVD grown β -Ga 2 O 3 metal-oxide-semiconductor field effect transistors on sapphire

MOCVD 在蓝宝石上生长 β -Ga 2 O 3 金属氧化物半导体场效应晶体管

• DOI: 10.7567/1882-0786/ab3b2a
• 发表时间: 2019-09
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Park, Ji;McClintock, Ryan;Jaud, Alexandre;Dehzangi, Arash;Razeghi, Manijeh
• 通讯作者: Razeghi, Manijeh