E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices

E2CDA：类型 II：协作研究：低功率开关器件的金属绝缘体转换

• 批准号: 1740213
• 负责人: Susanne Stemmer
• 金额: $ 20万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2021-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1740213&HistoricalAwards=false
• 关键词: E2CDA; Type; II; Collaborative; Research

The project focuses on new oxide materials that may enable a new generation of electronic devices for computing. The project will offer interdisciplinary training of graduate and undergraduate students in new electronic devices, materials, and circuits. Their training will be fostered by close collaboration and student exchanges between the investigators' groups at the University of California, Santa Barbara (UCSB) and Ohio State University (OSU). UCSB has a diverse undergraduate population and is a minority/Hispanic-serving institution. Regular phone conferences with industry stakeholders and related activities will ensure knowledge transfer to industry and expose the participating students to matters relevant to the transitioning of new materials and devices into emergent technologies. Novel electronic devices will be realized that employ electric fields to control the unique electronic properties of oxide materials, in particular, their ability to change the electrical resistance by a large amount. These devices will be investigated for their potential as alternatives to current transistor devices used for computing, which are based on conventional semiconductor materials, such as silicon. The project is motivated by unique opportunities, including the potential for abrupt switching and a reduction in the energy that is required to switch. Close collaboration between materials scientists at UCSB and electrical engineers at OSU will focus on optimizing oxide materials, their scientific understanding, and their control using electric fields, and establishing the device characteristics relevant for applications. The results from this project will contribute to a solid-state electronics technology that has been underexplored.

该项目着重于新一代电子设备进行计算的新氧化物材料。 该项目将提供新电子设备，材料和电路的研究生和本科生的跨学科培训。 他们的培训将由加利福尼亚大学圣塔芭芭拉分校（UCSB）和俄亥俄州立大学（OSU）的调查人员团体之间进行密切合作和学生交流。 UCSB拥有多样化的本科生，并且是少数族裔/西班牙裔服务机构。 与行业利益相关者和相关活动的定期电话会议将确保知识转移到行业，并使参与的学生了解与将新材料和设备过渡到新兴技术有关的事项。新型的电子设备将实现使用电场来控制氧化物材料的独特电子性能，特别是它们将电阻大量改变的能力。 这些设备的潜力将作为用于计算的当前晶体管设备的替代品，这些设备基于常规半导体材料，例如硅。 该项目是出于独特的机会，包括突然切换的潜力和减少切换所需的能量。 UCSB的材料科学家与OSU的电气工程师之间的密切合作将着重于优化氧化物材料，其科学理解以及使用电场的控制以及建立与应用相关的设备特性。 该项目的结果将有助于固态电子技术，该技术尚未得到充实。

项目成果

Reducing surface depletion of superconducting SrTiO 3 films with EuTiO 3 capping layers

减少具有EuTiO 3 覆盖层的超导SrTiO 3 薄膜的表面损耗

• DOI: 10.1063/5.0067681
• 发表时间: 2021
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Jeong, Hanbyeol;Combs, Nicholas G.;Munyan, Simon;Rashidi, Arman;Stemmer, Susanne
• 通讯作者: Stemmer, Susanne

Ferroelectric enhancement of superconductivity in compressively strained SrTiO3 films

• DOI: 10.1103/physrevmaterials.3.091401
• 发表时间: 2019-09-06
• 期刊: PHYSICAL REVIEW MATERIALS
• 影响因子: 3.4
• 作者: Russell, Ryan;Ratcliff, Noah;Harter, John W.
• 通讯作者: Harter, John W.