MRI: Acquisition of a Molecular Beam Epitaxy System for High-Performance Oxide Films

MRI：获取高性能氧化膜分子束外延系统

• 批准号: 0619698
• 负责人: Susanne Stemmer
• 金额: $ 47.26万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-09-01 至 2007-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0619698&HistoricalAwards=false
• 关键词: MRI; Acquisition; Molecular; Beam; Epitaxy

Technical AbstractThe University of California Santa Barbara will acquire a new molecular beam epitaxy (MBE) system for the growth of high-performance oxide thin films. Numerous research programs at UCSB require the growth of insulating or semiconducting oxide thin films. These include tunable dielectrics for microwave devices, oxide thin films for optoelectronics and sensing, gate dielectrics for the development of CMOS devices employing high-mobility semiconductor channels and for high-electron mobility transistors with reduced gate leakage and high charge densities. These applications require the deposition of structurally perfect oxide thin films with low impurity and point defect concentrations, control over interface atomic structures and compatibility with underlying active device layers. Oxide thin films grown by MBE will allow for the understanding of the basic physics and materials science of oxides that currently lags far behind that of other electronic materials. Experimental testing and realization of the theoretical predictions requires high-quality, pure materials and the atomic layer control afforded by MBE. We anticipate that the high-purity, structurally perfect oxide films synthesized by MBE will lead to new scientific insights that generate new device applications. Graduate students and post-doctoral researchers are the primary 'hands-on' users of MBE at UCSB. The proposed MBE system will be operated as a shared facility, impacting the education and training of a large number of students in a wide range of interdisciplinary research activities at UCSB and collaborating academic institutions - we will build on the strong culture for MBE of compound semiconductors at UCSB and house the tool in the same large shared facility. Formal training in MBE is offered in graduate courses and weekly MBE seminars in the Materials Department while hands-on-training is provided by two development engineers. The oxide MBE system will significantly extend the opportunities that have previously been offered to student and teacher research interns and education programs aimed at underrepresented groups.Lay AbstractMolecular beam epitaxy is unique among the techniques used for making new electronic materials that enable modern electronic and optical devices, such as transistors and lasers. The performance of these devices depends largely on the degree of materials perfection. In molecular beam epitaxy, layers that are a few atoms thick can be stacked and materials with different electronic properties can be combined. Molecular beam epitaxy allows for unprecedented purity of these layers - the impurity levels can be as low as a few ten parts per billion. The new molecular beam epitaxy system at the University of California Santa Barbara will be utilize these unique capabilities to develop new classes of electronic thin film materials, based on metal oxides. We anticipate that the high-purity, structurally perfect oxide films synthesized by molecular beam epitaxy will lead to new technologies, such as transistors with higher operating speeds and capacitors that enable new wireless communication devices. The oxide molecular beam epitaxy system will contribute greatly to the education and training of students at the University of California Santa Barbara, who will be the primary hands-on-users of the new system. The oxide MBE system will also significantly extend the opportunities that have previously been offered to student and science teacher interns and education programs aimed at underrepresented groups.

技术摘要加利福尼亚大学圣塔芭芭拉分校将获得一种新的分子束外延（MBE）系统，用于增长高性能氧化薄膜。 UCSB的许多研究计划都需要增长绝缘或半导体氧化物薄膜。 其中包括用于微波设备的可调介质，用于光电子和传感的氧化物薄膜，用于开发采用高驾驶性半导体通道的CMOS设备的栅极介电膜以及用于降低门泄漏和高电荷密度的高电动迁移式晶体管的高速迁移式晶体管。 这些应用要求沉积具有低杂质和点缺陷浓度的结构完美的氧化薄膜，对界面原子结构的控制以及与潜在的活性设备层的兼容性。 由MBE生长的氧化薄膜将允许了解目前远远落后于其他电子材料的氧化物的基本物理和材料科学。 理论预测的实验测试和实现需要高质量的纯材料和MBE提供的原子层控制。 我们预计，由MBE合成的高纯度，结构上完美的氧化物膜将导致新的科学见解产生新的设备应用。 研究生和博士后研究人员是UCSB MBE的主要“动手”使用者。 拟议的MBE系统将作为共享设施运行，影响UCSB的广泛跨学科研究活动的大量学生的教育和培训 - 我们将建立在UCSB的MBE的强大文化基础上，UCSB的MBE文化并在同一大型共享设施中使用该工具。 在研究生课程和材料部的每周MBE研讨会上提供了MBE的正式培训，而两位开发工程师则提供动手培训。 氧化物MBE系统将大大扩展以前提供给旨在代表人数不足的学生和教师研究实习生和教育计划的机会。layAbstractmolecular分子束外观外观在制造新的电子材料的技术中是独一无二的，用于制造新的电子材料，以启用现代电子和光学设备，例如晶体管和激光器。 这些设备的性能在很大程度上取决于材料的完美程度。 在分子束外延中，可以堆叠几个原子的层，并且可以将具有不同电子特性的材料组合在一起。 分子束外延允许这些层的前所未有的纯度 - 杂质水平可以低至十亿分的十份。 加利福尼亚大学圣塔芭芭拉分校的新分子束外延系统将利用这些独特的能力来开发基于金属氧化物的新型电子薄膜材料。 我们预计由分子束外延合成的高纯度，结构上完美的氧化物膜将导致新技术，例如具有较高工作速度的晶体管和能够启用新无线通信设备的电容器。 氧化物分子束外延系统将为加利福尼亚大学圣塔芭芭拉大学的学生的教育和培训做出很大贡献，后者将成为新系统的主要动手使用者。 氧化物MBE系统还将大大扩大以前提供给旨在涉及代表性不足群体的学生和科学老师实习生和教育计划的机会。