MRI: Development of a High Pressure Spatial CVD for Functional Materials

MRI：功能材料高压空间 CVD 的开发

• 批准号: 1726395
• 负责人: Siddha Pimputkar
• 金额: $ 52.4万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1726395&HistoricalAwards=false
• 关键词: MRI; Development; Pressure; Spatial; CVD

This award from the Division of Materials Research and the Major Research Instrumentation program supports the development of a new reactor for enabling the synthesis of new materials for technologies in solid state lighting, power electronic systems, and laser technologies. This equipment will be used to grow new materials under extreme conditions such as high pressure, new elements integration, and integration of highly dissimilar materials. One PhD student and a postdoctoral fellow will contribute to designing, building, and optimizing the reactor and its relevant processes for producing these new materials of unconventional III-nitride semiconductors and oxynitride materials. Such new materials will have impacts on developing device technologies with applications in energy efficiency and renewable energy, smart vehicle and power delivery systems, optical communications, and internet-of-things. This new reactor design will also be scalable for future technology transfer, if proven successful. The project will support the training of next generation of instrument scientists.This award from the Division of Materials Research and the Major Research Instrumentation program supports the development of a novel chemical vapor phase (CVD) reactor for enabling the exploration of high indium content III-nitride alloys and oxynitrides, which require high pressures ( 100 atm) to prevent decomposition of the nitride, and their device applications. Two key elements, spatial separation of source material/ precursors and high reactor pressures, will be combined in a novel high pressure spatial CVD (HPS-CVD). A ( 2 inch diameter) wafer is continuously rotated through multiple different source chambers leading to mixing of the desired precursors in the user controlled boundary layer thickness ( 1 mm) preventing pre-reactions and reducing diffusion distances. Such a reactor currently does not exist and its development will enable progress in (epitaxial) growth of hard to synthesize functional materials due to decomposition limitations ultimately enabling novel device designs and exploring new science. The equipment being developed will integrate well with the existing eco­ systems based on a closed-loop and integrated approach for addressing basic science and applied material research needs in the III-nitride semiconductors beyond conventional material systems and oxynitrides. Specifically, the materials enabled by this equipment include: high indium content AlInN/AlInGaN/BInGaN-based heterostructores and growth, dilute-anion impurity III-Nitride alloys and heterostructures, rare-earth doped III-nitride alloys, along with functional oxynitrides. The concept of HPS-CVD can be expanded beyond III-Nitride and oxynitride materials, and it is expected this concept will be extended for material integration in the future.

材料研究部和主要研究仪器计划的奖项支持开发新的反应堆，以促进固态照明，电力电子系统和激光技术中新材料的合成。该设备将用于在极端条件下种植新材料，例如高压，新元素整合以及高度不同的材料的整合。一位博士生和一名博士后研究员将有助于设计，构建和优化反应堆及其相关过程，以生产这些非常规III氮化物半导体和氧合氮化物材料的新材料。这种新材料将对开发具有能源效率和可再生能源，智能车辆和电力输送系统，光学通信和电池的设备技术产生影响。如果被证明成功，这种新的反应堆设计也将用于未来的技术传输。该项目将支持对下一代仪器科学家的培训。材料研究部和主要研究仪器计划的奖项支持开发新型的化学蒸气阶段（CVD）反应堆，以启用高依赖含量III-氮化合金和氧气的探索，以防止高压力（100 atm）的二型nItries and Nitridations及其nItridations，及其nItridations，以及他们的设备及其nItridations，及其设备的使用。新型的高压空间CVD（HPS-CVD）将组合两个关键要素，即源材料/前体和高反应器压力的空间分离。 A（直径2英寸）的赌注通过多个不同的源类连续旋转，从而在用户控制的边界层厚度（1 mm）中混合所需的前体，以防止预反应并减少扩散距离。这种反应堆目前不存在，由于分解局限性最终使新型设备设计并探索新科学，因此它的开发将使难以合成功能材料的（外在）增长进展。正在开发的设备将与现有的生态系统良好地集成到基于闭环和综合方法，以满足以外的III氮化物半导体的基础科学和应用材料研究需求。具体而言，该设备启用的材料包括：高内部内容Alinn/Alingan/bingan基于基于生长的异质结构，稀释型杂质III-硝酸合金和异质结构，稀有掺杂的III-硝化合金以及官能氧气。 HPS-CVD的概念可以扩展到III-硝酸盐和氧气材料之外，预计将来将扩展该概念以在未来进行材料整合。

项目成果

Computational fluid dynamics modeling of a new high-pressure chemical vapor deposition reactor design

• DOI: 10.1016/j.jcrysgro.2021.126155
• 发表时间: 2021-04
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: P. Yousefian;Siddha Pimputkar