Workshop: 10th IW on Bulk Nitride Semiconductors (IWBNS-X): Growth, Properties and Devices; Sept 18 - 22, 2017; Espoo, Finland

研讨会：第 10 届块状氮化物半导体 IW (IWBNS-X)：生长、特性和器件；

• 批准号: 1745826
• 负责人: Siddha Pimputkar
• 金额: $ 0.5万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2018-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1745826&HistoricalAwards=false
• 关键词: Workshop; 10th; IW; Bulk; Nitride

Nontechnical Description: The 10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X) held in Espoo, Finland, from Sep 18. - Sep. 22, 2017 brings together researchers from around the world focused on understanding, developing, and applying semiconductor crystal growth technologies. Sharing and discussing the current state-of-the-art greatly contributes to advancing science and technology, thereby impacting society by enabling applications of these materials, such as inexpensive disinfection tools to reduce infections or energy-efficient electrical power conversion to reduce energy waste. Cross-pollination of scientific ideas across multiple specialized research fields positively impacts the scientific community in various countries. This workshop provides a unique opportunity for scientists to share and stimulate new ideas, learn new challenges and directions, and explore and promote new collaborations. The requested funding supports the participation of both junior and senior researchers from the U.S., while also increasing access for women, to enable further education as well as development of collaborations with international experts.Technical Description: This workshop brings together internationally leading scientists and engineers who are experts, working at the frontiers of wide bandgap materials, including device research and development. Leading experts present their recent achievements in the field of bulk nitride growth, controlling their properties and integrating these materials into optoelectronic or electronic devices and applications. Specific goals of this workshop include discussions of critical scientific challenges related to enabling nitride devices, while also facilitating international collaborations. Topics discussed at the workshop include: development of bulk nitride growth methods, understanding connections between growth parameters and materials properties, controlling doping uniformity and targeting desired doping levels, defect reduction and mitigation, advances in characterization of bulk materials, implementing advanced computational growth models, (vertical) device structures, and homoepitaxial growth of nitride devices. The workshop helps advance the field by sharing results and methods, inspiring new ideas, and initiation of new collaborations - all while enhancing career development of the participants by facilitating interactions with international experts.

非技术描述：第10届国际氮化物半导体研讨会（IWBNS -X）在芬兰Espoo举行，从9月18日开始于芬兰Espoo举行，2017年9月22日，2017年9月22日，汇集了来自世界各地的研究人员，汇集了专注于理解，发展，发展，发展和应用半导体晶体增长技术。共享和讨论当前的最新最新促进了科学和技术的贡献，从而通过实现这些材料的应用来影响社会，例如廉价的消毒工具以减少感染或节能电力转换以减少能源浪费。多个专业研究领域的科学思想的交叉授粉对各个国家的科学界产生了积极影响。该研讨会为科学家提供了一个独特的机会，可以分享和刺激新想法，学习新的挑战和方向，并探索和促进新的合作。要求的资金支持来自美国的初级和高级研究人员的参与，同时又增加了妇女的访问权限，以实现进一步的教育以及与国际专家的合作开发。技术描述：该研讨会汇集了国际领先的科学家和工程师，这些专家是在包括设备研究和开发在内的广泛带型材料的领域的专家，包括设备研究和开发。领先的专家介绍了他们最近在氮化物增长领域取得的成就，控制其性质并将这些材料整合到光电或电子设备和应用中。该研讨会的具体目标包括讨论与氮化物设备相关的关键科学挑战，同时还促进了国际合作。研讨会上讨论的主题包括：大量氮化生长方法的发展，了解生长参数和材料特性之间的联系，控制兴奋剂统一性并靶向所需的兴奋剂水平，减少和减轻趋势，散装材料的表征进展，实施高级计算增长模型，（Vertical）设备结构，和同志型生长。该研讨会通过共享结果和方法，鼓舞新的想法以及开始新的合作启动来帮助推进该领域，同时通过促进与国际专家的互动来增强参与者的职业发展。