Multiferroic Tunnel Junction with Active Dual Layer Barrier

具有主动双层势垒的多铁性隧道结

• 批准号: 1411166
• 负责人: Qi Li
• 金额: $ 36万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2018-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1411166&HistoricalAwards=false
• 关键词: Multiferroic; Tunnel; Junction; Active; Dual

This project is jointly funded by the Electronic and Photonic Materials Program (EPM) and Ceramics Program (CER) in the Division of Materials Research (DMR). Nontechnical Description Nanoferronics is a new concept that combines ferroelectrics, which has spontaneous charge polarization, with spintronics, which utilize the electron spins to transport and store information. These new concepts can be used as multilevel multifunctional devices with new functionalities including electric control of spins. The project addresses a major materials challenge on how to increase the resistance on-and-off ratio of multiferroic tunnel junctions, a nanoferronic concept, by combining a very thin ferroelectric insulator and an interface layer as the barrier with magnetic tunnel junctions which have been used for magnetic recording and non-volatile memories. Success of the research can have significant impacts on realizing the new device concept and especially the combined memory-on-processor approach. The educational goals of the project are to provide educational and training opportunities for both graduate and undergraduate students, especially for female and underrepresented minority undergraduate students, with a stimulating environment for interdisciplinary experience in physics, materials sciences, and engineering. The PI has many years of experience in advising female and underrepresented groups through several established programs on campus and will continue in those activities.Technical DescriptionMultiferroic tunnel junctions combine magnetic tunnel junction with ferroelectric tunneling, and have shown many promising functionalities that can bring logic and memory into one device. The objective of the project is to design and fabricate a dual layer barrier in the multiferroic tunnel junctions with one ferroelectric barrier and a second interfacial layer. More specifically, by designing the barrier interface, a phase transition at the interface may be triggered and serve as a current filter to regulate the on-and-off state. The two major goals are (1) to increase the tunneling electroresistance, the resistance on-off ratio, and (2) to achieve the control of magnetic state by electrical field. With the second barrier layer, a much larger enhancement of the resistance ratio through the ferroelectric driven interface phase transition may be achieved. By combining the design and controlled growth of heterostructures of different magnetic and ferroelectric oxides, measurements of the interfacial states, and measurements of magnetic and transport properties of the devices, the project seeks to understand the mechanisms of the interfacial effect in enhancing tunneling electroresistance and magnetoelectric interaction in several systems.

该项目由材料研究部（DMR）电子和光子材料计划（EPM）和陶瓷计划（CER）联合资助。非技术描述 纳米铁电子学是一个新概念，它将具有自发电荷极化的铁电体与利用电子自旋来传输和存储信息的自旋电子学相结合。这些新概念可用作具有新功能（包括旋转的电控制）的多级多功能装置。该项目解决了一个主要的材料挑战，即如何通过将非常薄的铁电绝缘体和作为势垒的界面层与已使用的磁性隧道结结合起来，提高多铁性隧道结（纳米铁概念）的电阻开关比。用于磁记录和非易失性存储器。研究的成功会对实现新设备概念，特别是组合处理器内存方法产生重大影响。该项目的教育目标是为研究生和本科生，特别是女性和少数族裔本科生提供教育和培训机会，为物理学、材料科学和工程方面的跨学科经验提供刺激的环境。该 PI 在通过校园内的多个既定项目为女性和代表性不足的群体提供咨询方面拥有多年的经验，并将继续从事这些活动。技术说明多铁性隧道结将磁隧道结与铁电隧道相结合，并展示了许多可以带来逻辑和内存的有前途的功能到一台设备中。该项目的目标是在多铁性隧道结中设计和制造双层势垒，其中包含一个铁电势垒和第二个界面层。更具体地，通过设计势垒界面，可以触发界面处的相变并充当电流滤波器来调节开关状态。 两个主要目标是（1）增加隧道电阻、电阻开关比，以及（2）实现电场对磁状态的控制。利用第二势垒层，可以通过铁电驱动的界面相变来实现电阻比的更大增强。通过结合不同磁性和铁电氧化物异质结构的设计和受控生长、界面状态的测量以及器件的磁性和输运特性的测量，该项目旨在了解界面效应在增强隧道电阻和磁电方面的机制多个系统的交互。