Global Strain-Free III-Nitride Heterostructures: Growth, Structure and Near-Infrared Optical Properties
全局无应变 III 族氮化物异质结构:生长、结构和近红外光学性质
基本信息
- 批准号:1206919
- 负责人:
- 金额:$ 39万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2012
- 资助国家:美国
- 起止时间:2012-06-01 至 2016-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
AbstractTechnical description: The main objective of this project is to establish the relationship between growth, atomic structure and optical properties of lattice-matched and strain-balanced AlInN/(In)GaN multi-quantum well structures. In order to correlate the growth modes with microstructure and near-infrared optical properties, AlInN/(In)GaN heterostructures are grown by plasma-assisted Molecular Beam Epitaxy (MBE) on extremely high quality quasi-bulk GaN substrates, the atomic structure of the semiconductor materials is characterized in detail using high-resolution x-ray diffraction and transmission electron microscopy, while the near-infrared optical properties of the materials are examined experimentally using Fourier transform infrared spectroscopy. This project advances the understanding of MBE growth of strain-free III-nitride materials for complex infrared optoelectronic devices. Basic mechanisms of material growth such as adatom kinetics and impurity incorporation on polar and non-polar GaN substrates are studied in detail and compared. The goal is to achieve adequate understanding and control of the growth process, resulting microstructure and infrared optical properties in order to realize the theoretical potential of this material system. The fundamental and practical limitations for MBE growth, in particular for metal-modulated epitaxy, of complex nitride heterostructures are established. Non-technical description: This project investigates a new class of semiconductor materials for infrared light sources and detectors that has the potential to enable new practical applications (infrared spectroscopy, infrared imaging, and telecommunications) with broad benefits to society. This research also increases the learning opportunities for students of all ages, inside and outside the traditional classroom by integrating interdisciplinary research with broader physics and engineering education and training. In particular, the students involved in this project have the opportunity to acquire hands-on experience with the latest materials fabrication and characterization tools and techniques. The excitement of scientific discovery is conveyed to students through collaborations with several research groups in academia, industry, and national laboratories. The interaction with scientists in industry and a federally funded laboratory offers the students a different view of the scientific pursuit, as well as a better understanding of their career options. The PIs and students also will participate in outreach activities organized either in-house or at local schools to increase exposure of K-12 students and the general public to modern scientific topics at the border between physics, material science, and engineering through Purdue?s highly popular Physics on the Road Project.
摘要技术描述:该项目的主要目的是建立生长,原子结构与晶格匹配和应变平衡的Alinn/(In)GAN多量词结构的关系。为了将生长模式与微观结构和近红外光学特性相关联,alinn/(in)GAN异质结构是通过血浆辅助分子束外延(MBE)在极高质量的准蛋白bulk gan sibstres上的质量差异,同时具有较高的difaction intarlive In-semimentive in tarrive x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray x-ray and-gan异质结构是通过等离子体辅助分子束外延(MBE)增长的。使用傅立叶变换红外光谱法对材料的近红外光学特性进行了实验检查。该项目推动了对复杂红外光电设备的无应变III氮化物材料的MBE生长的理解。详细研究并比较了材料生长的基本机制,例如极性和非极性GAN底物上的Adatom动力学和杂质掺入。目的是实现对生长过程的充分理解和控制,从而产生微观结构和红外光学特性,以实现该材料系统的理论潜力。建立了复杂的氮化物异质结构的MBE增长的基本和实际局限性,特别是金属调节外延。非技术描述:该项目研究了一类新的红外光源和检测器的半导体材料,该材料有可能实现新的实用应用(红外光谱,红外成像和电信),并为社会带来广泛的好处。这项研究还通过将跨学科研究与更广泛的物理和工程教育和培训整合到传统教室内外的所有年龄段,在传统教室内部和外部的学习机会。特别是,参与该项目的学生有机会通过最新的材料制造和特征工具和技术获得实践经验。科学发现的兴奋是通过与学术界,工业和国家实验室的几个研究小组的合作传达给学生的。与行业科学家和联邦资助的实验室的互动为学生提供了不同的科学追求观点,并更好地了解了他们的职业选择。 PIS和学生还将参加内部或当地学校组织的外展活动,以增加K-12学生和公众的接触,并通过普渡大学(Purdue)在公路项目中非常受欢迎的物理学对物理,材料科学和工程之间的现代科学主题进行现代科学主题。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Oana Malis其他文献
Oana Malis的其他文献
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{{ truncateString('Oana Malis', 18)}}的其他基金
Infrared photonics using ferroelectric scandium-aluminum nitride semiconductors
使用铁电钪铝氮化物半导体的红外光子学
- 批准号:
2414283 - 财政年份:2024
- 资助金额:
$ 39万 - 项目类别:
Continuing Grant
Infrared Quantum Materials Based on Scandium-Containing III-Nitrides
基于含钪III族氮化物的红外量子材料
- 批准号:
2004462 - 财政年份:2020
- 资助金额:
$ 39万 - 项目类别:
Continuing Grant
Novel Infrared Optical Materials Based on III-Nitride Semiconductors: Growth, Structure and Properties
基于III族氮化物半导体的新型红外光学材料:生长、结构和性能
- 批准号:
1610893 - 财政年份:2016
- 资助金额:
$ 39万 - 项目类别:
Continuing Grant
CAREER: Nonpolar vertical-transport III-nitride devices for near-infrared applications
职业:用于近红外应用的非极性垂直传输 III 族氮化物器件
- 批准号:
1253720 - 财政年份:2013
- 资助金额:
$ 39万 - 项目类别:
Standard Grant
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器
- 批准号:
0935899 - 财政年份:2009
- 资助金额:
$ 39万 - 项目类别:
Standard Grant
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
基于GaAs/AlAs量子级联纳米结构价带子带间跃迁的中红外半导体激光器
- 批准号:
0725384 - 财政年份:2007
- 资助金额:
$ 39万 - 项目类别:
Standard Grant
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