"Research Initiation Award: Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air."

“研究启动奖：用于空气中高温应用的宽带隙半导体复合触点的制造和表征。”

• 批准号: 1137470
• 负责人: Adetayo Adedeji
• 金额: $ 20万
• 依托单位: Elizabeth City State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1137470&HistoricalAwards=false
• 关键词: Research; Initiation; Award; Fabrication; Characterization

Elizabeth City State University's Research Initiation Award entitled - Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air - is a collaborative effort between the principal investigator at Elizabeth City State University (ECSU) and faculty at the Center for Materials Research at Norfolk State University (CMR-NSU). The project supports materials research activities by faculty at ECSU and CMR-NSU, as well as research education and training of undergraduate students at ECSU. The project has the potential to contribute to the undergraduate education knowledge base through integration of education and research. It also provides summer research experiences to high school students.The research objective of the proposal is to explore vacuum sputtered nanolayers ( 100 nm thick) of conducting refractory metals, metal silicides and titanium-tungsten, as oxidation and diffusion barrier layers to protect contacts on Wide Band Gap (WBG) semiconductor devices that will function in a high temperature environment. The effectiveness and reliability of the devices operating at high temperature ( 500º C ) over an extended period of time ( 5000 hours) will depend on the interfacial reactions, oxygen defect and mobility or accumulation of carbon close to the contact/barrier layer interface. Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectroscopy (AES) and Electron Microscopy (TEM & SEM) will be employed to physically characterize interface reaction at such elevated annealing temperatures.

伊丽莎白市州立大学的研究发起奖，题为“在空气中进行高温应用的宽带间隙半导体的制造和表征 - 是伊丽莎白市州立大学（ECSU）的首席研究员与诺福克州立大学材料研究中心（CMR -NSU）的合作工作。该项目支持ECSU和CMR-NSU教师的材料研究活动，以及ECSU本科生的研究教育和培训。该项目有可能通过教育和研究的整合来为本科教育知识库做出贡献。它还为高中生提供了夏季的研究经验。该提案的研究目标是探索真空的纳米层（100 nm厚）的导致耐光金属，金属硅硅和钛 - titanium-tungsten，作为氧化和扩散屏障层，以保护宽带差（WBG）半束机器的宽带（WBG）半座环境，以保护较高的环境。在长时间（5000小时）中在高温（500ºC）下运行的设备的有效性和可靠性将取决于界面反应，氧缺陷和移动性或靠近接触/屏障层界面接近的碳的积累。 Rutherford反向散射光谱法（RB），螺旋钻电子光谱（AES）和电子显微镜（TEM＆SEM）将用于在这种升高的退火温度下物理表征界面反应。