MRI: Acquisition of a sputtering system for contact metallization of WBG semiconductor for high temperature application in air ambient.

MRI：购买用于 WBG 半导体接触金属化的溅射系统，用于空气环境中的高温应用。

• 批准号: 1040200
• 负责人: Adetayo Adedeji
• 金额: $ 20.47万
• 依托单位: Elizabeth City State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-10-01 至 2013-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1040200&HistoricalAwards=false
• 关键词: MRI; Acquisition; sputtering; system; contact

Technical Abstract: Wide Band Gap (WBG) semiconductor-based devices are capable of operating in extreme environmental conditions such as high temperatures, high radiation and reactive environments because of the intrinsic properties of the semiconductors. However, usual contacts and interconnects will fail long before the semiconductor fails in harsh environments. One of the goals of the research is to explore refractory metals, their alloys and silicides as oxidation and diffusion barrier layers to protect contacts on WBG semiconductor-based devices. This major research instrumentation award will fund the acquisition of a sputtering system at Elizabeth City State University. The sputtering system will be used to deposit high temperature barrier material in vacuum. The effectiveness and reliability of the device will depend interfacial reactions (including oxygen defects and mobility or accumulation of carbon) between vacuum sputtered barrier layer ( 100 nm thick) and contacts on WBG semiconductors (SiC, GaN, and Diamond). To physically characterize interface reactions at elevated temperatures, Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectroscopy (AES), and Electron Microscopy (TEM & SEM) will be employed. The stability of the electrical characteristics of a simple schottky device will indicate the effectiveness of the barrier layer in harsh environment. Access to a sputtering system will also enable us to explore new collaborations with the center for materials research at Norfolk State University and Varicon Inc. in the field of "smart windows" for efficient energy use in buildings. For this and similar applications, solar materials called chromogenic materials (mostly doped transition metal oxide) will be deposited with the sputtering system and characterized locally and by collaborators.Non-technical Abstract: This major research instrumentation award funds the acquisition of a sputtering system at Elizabeth City State University. The sputtering system will be used to deposit high temperature metallic nano-layers (layers with thickness of about one-thousandth the thickness of human hair) in vacuum. The metallic nano-layers will be explored as barrier layer to protect devices fabricated on Wide Band Gap (WBG) semiconductors (SiC, GaN, Diamond, etc). These semiconductors have intrinsic properties that make them capable of surviving in harsh environmental conditions such as high temperature, high radiation and reactive environment. However, usual contacts will fail readily under extreme environmental conditions if not protected, limiting the WBG semiconductor-based device capability. Specialized electronic devices (including high power switches, sensors, controls and power management for aerospace and automotive industries) capable of operating at such extreme conditions can be located inside automobile engine block for more efficient fuel consumption and reduced atmospheric pollution (due to incomplete gas combustion). In ambient air at elevated temperature, reaction between adjacent layers in a composite contact metallization structure is one of the factors that will limit the reliability and effectiveness of WBG semiconductor-based devices. One of the primary goals is to study such reactions using state-of-the-art, high technology equipment for surface analysis. A simple schottky diode device with appropriate protective barrier layer will be evaluated in ambient air at high temperatures over an extended period of time. The stability of the devices electrical characteristics will imply the effectiveness of the barrier layer. Access to a sputtering system will also enable the team to explore new collaborations with the center for materials research at Norfolk State University and Varicon Inc. in the field of "smart windows" for efficient energy use in buildings. For this and similar applications, solar materials called chromogenic materials (mostly doped transition metal oxide) will be deposited with the sputtering system and characterized locally and by collaborators.

技术摘要：宽带隙（WBG）基于半导体的设备能够在高温，高辐射和反应性环境等极端环境条件下进行操作，因为半导体的内在特性。 但是，在半导体在恶劣的环境中失败之前，通常的接触和互连将很长时间失败。 该研究的目标之一是探索难治性金属，它们的合金和硅化剂作为氧化和扩散屏障层，以保护基于WBG半导体设备的接触。 这项重大的研究仪器奖将资助伊丽莎白市州立大学的溅射系统的收购。 溅射系统将用于将高温屏障材料沉积在真空中。 该设备的有效性和可靠性将取决于真空溅射屏障层（100 nm厚）之间的界面反应（包括氧缺损以及迁移率或碳的积累）以及WBG半导体（SIC，GAN和DIAMOND）的接触。 在物理上表征在升高温度下的界面反应，将采用卢瑟福反向散射光谱法（RB），螺旋钻电子光谱（AES）和电子显微镜（TEM＆SEM）。 简单的Schottky设备的电气特性的稳定性将表明屏障层在恶劣的环境中的有效性。 访问溅射系统还将使我们能够探索与诺福克州立大学和Varicon Inc.材料研究中心的新合作，以在“智能窗口”领域，以实现建筑物的有效能源使用。 为此，将使用称为发色材料的太阳能材料（主要是掺杂的过渡金属氧化物）将与溅射系统沉积，并在本地和合作者中表征。 溅射系统将用于沉积高温金属纳米层（厚度约为人毛的厚度大约一千分之一）。 金属纳米层将作为屏障层探索，以保护在宽带隙（WBG）半导体（SIC，GAN，DIAMOND等）上制造的设备。 这些半导体具有内在特性，可以使它们能够在高温，高辐射和反应性环境等恶劣环境条件下存活。 但是，如果不保护，通常在极端环境条件下很容易失败，从而限制了基于WBG半导体的设备能力。 能够在这种极端条件下运行的航空航天和汽车行业的专门电子设备（包括高功率开关，传感器，控制和电源管理）可以位于汽车发动机块内部，以进行更有效的燃油消耗和减少大气污染（由于不完全的气体燃烧而导致的大气污染）。 在升高温度下的环境空气中，相邻层之间在复合接触金属化结构中的反应是限制WBG半导体设备的可靠性和有效性的因素之一。 主要目标之一是使用最先进的高科技设备进行表面分析研究此类反应。 将在长时间的高温下在环境空气中评估具有适当保护屏障层的简单肖特基二极管装置。 设备电气特性的稳定性将暗示屏障层的有效性。 访问溅射系统还将使团队能够探索与诺福克州立大学和Varicon Inc.的材料研究中心的新合作，以在“智能窗口”领域，以在建筑物中有效地使用能源。 为此，将使用称为发色材料（主要是掺杂的过渡金属氧化物）的太阳能材料与溅射系统沉积，并在本地和合作者进行表征。