Collaborative Research: Defect Modeling and Process Optimization for Nanowire Growth towards Improved Nanodevice Reliability

合作研究：纳米线生长的缺陷建模和工艺优化，以提高纳米器件的可靠性

• 批准号: 1129817
• 负责人: Jingyan Dong
• 金额: $ 24.4万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1129817&HistoricalAwards=false
• 关键词: Collaborative; Research; Defect; Modeling; Process

The objective of this award is to optimize the growth process of semiconductor nanowires (NWs) by modeling the interrelationship between their growth process variables, structural defects, and mechanical properties, so that reliable NW-based devices with fewer defects can be produced. A double-loop framework will be investigated in this research, which links NW defects and the reliability of NW-based devices for the first time. The fundamental questions to be answered are: (1) How to systematically establish the relationship between the process variables, the generation rates of different NW defects, and the reliability of NW-based devices? (2) How to expedite the reliability prediction for NW-based devices and use the achieved reliability information to perform the application-centric defect reduction through the manipulation of the NW growth process? Specifically, we will (1) model the stochastic generation process of NW defects that link the generation of different types of defects to the NW growth-process variables; (2) develop a statistical fracture model for NWs with various defects under mechanical loading; (3) explore an advanced accelerated testing methodology and optimize the NW growth process by the optimal experimental design methods; and (4) conduct validation studies based on the proposed methodology by developing benchmark NW-based nanodevices, and demonstrate their desired reliability performance.If successful, this research will facilitate today's fast-paced technological advancements that are continually faced with increasing needs for cost-effective product-development technologies. It will result in an appealing practice that helps resolve common fabrication problems in a wide spectrum of nanomaterials/device development processes. It is expected that a systematic process optimization approach for the development of highly reliable NW-based devices, instead of trial-and-error approaches that are currently used in the field of nanomanufacturing, will be achieved. Moreover, the educational initiatives will strengthen the related programs at the two collaborative institutions, which will impact a large number of on-campus and nationwide distance students. The research result will also be broadly disseminated through technical publications, workshops, short courses, and K-12 outreach program.

该奖项的目的是通过对其生长过程变量，结构缺陷和机械性能之间的相互关系进行建模，从而优化半导体纳米线（NWS）的增长过程，以便能够产生较少缺陷的可靠基于NW的设备。这项研究将研究一个双环框架，该框架将首次链接NW缺陷和基于NW的设备的可靠性。要回答的基本问题是：（1）如何系统地建立过程变量之间的关系，不同的NW缺陷的发电速率以及基于NW的设备的可靠性？ （2）如何加快基于NW的设备的可靠性预测，并使用已实现的可靠性信息通过操纵NW增长过程来执行以申请为中心的缺陷减少？具体而言，我们将（1）建模NW缺陷的随机生成过程，该过程将不同类型的缺陷的生成与NW增长过程变量联系起来； （2）为机械载荷下有各种缺陷的NWS开发一个统计断裂模型； （3）探索一种高级加速测试方法，并通过最佳实验设计方法优化NW增长过程； （4）通过开发基于基准NW的NANODEVICES，并证明其所需的可靠性绩效来进行基于提议的方法的验证研究。如果成功，这项研究将促进当今快节奏的技术进步，这些进步不断面临成本效益的产品开发技术的需求。这将导致一种有吸引力的做法，有助于解决各种纳米材料/设备开发过程中常见的制造问题。可以预期，将采用一种系统的基于NW的设备开发的系统过程优化方法，而不是目前在纳米制造领域使用的试验和错误方法。此外，教育计划将加强两个协作机构的相关计划，这将影响大量的校园和全国远程学生。研究结果还将通过技术出版物，研讨会，短期课程和K-12外展计划来广泛传播。