Understanding Molecular Reactivity at Semiconductor Surfaces

了解半导体表面的分子反应性

• 批准号: 0910717
• 负责人: Stacey Bent
• 金额: $ 42万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-15 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0910717&HistoricalAwards=false
• 关键词: Understanding; Molecular; Reactivity; Semiconductor; Surfaces

Professor Stacey F. Bent of Stanford University is supported by the Analytical and Surface Chemistry Program in the Division of Chemistry to study the reactivity of bifunctional molecules with Ge (100) and Si (100) semiconductor surfaces. Attachment, displacement, and layer-by-layer surface modification methods will be explored. A combination of experimental and theoretical methods, including surface infrared, x-ray photoelectron spectroscopy, thermal desorption spectrometry, and density functional theory calculations, will be used to study the effect of electronic, steric, bond strain, proximity, enthalpy and entropy parameters on the reactivity and competitive binding of bifunctional molecules at the surface. The proposed research aims for a better understanding of organic attachment to semiconductor surfaces. Modifying the interfacial properties of semiconductor systems by organic layers plays an important role in a variety of applications, such as nanowire and quantum dot passivation, templated assembly, MEMS devices, sensors, and organic photovoltaics. The educational activities involve training of graduate and undergraduate students in state-of-the-art surface analysis methods.

斯坦福大学的Stacey F. Bent教授得到了化学分析和表面化学计划的支持，以研究双功能分子与GE（100）和Si（100）半导体表面的反应性。将探索附件，位移和按层表面修饰方法。实验和理论方法的组合，包括表面红外，X射线光电光谱，热解吸光谱法和密度功能理论计算，将使用用于研究电子，空间，键合，接近，邻接性，焓，触发性，触发和入口参数对反应性和竞争性结合的作用和竞争性分子的作用。拟议的研究旨在更好地理解有机物对半导体表面的依恋。通过有机层修改半导体系统的界面特性在各种应用中起着重要作用，例如纳米线和量子点钝化，模板组装，MEMS设备，传感器和有机光伏电动机。教育活动涉及培训研究生和本科生的最先进的表面分析方法。