Collaborative Research: Structure and Morphology of Graphene Sheets for Carbon-Based Nanoelectronics

合作研究：碳基纳米电子学用石墨烯片的结构和形貌

• 批准号: 0825592
• 负责人: Cristian Ciobanu
• 金额: $ 15万
• 依托单位: Colorado School of Mines
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-09-01 至 2011-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0825592&HistoricalAwards=false
• 关键词: Collaborative; Research; Structure; Morphology; Graphene

Graphene, a single-layer of carbon atoms, exhibits dissipation-free electric conduction over the scale of microns even at room temperature. As such, graphene could enable the continuation of the miniaturization trend in nanoelectronics at a time when silicon-based devices reach their natural limitations. However, the control over the area and quality of graphene sheets remains a major challenge because their morphology is determined both by atomic-scale phenomena and by long-ranged elastic interactions of surface features. Experiments on graphene growth on silicon carbide show that the key to grow large and smooth graphene sheets lies in controlling the structure of the precursor layer, i.e. of the interface between graphene and the substrate. To achieve our primary objective of controlling the quality of graphene sheets, we propose a multi-scale approach that combines experimental techniques for surface characterization with atomic-scale calculations, genetic algorithms for finding the surface structure, and continuum models of nucleation and growth.If successful, this work will guide novel approaches to grow large and smooth graphene sheets, which through lithographic patterning can be used to fabricate low-power nanoelectronic devices. Our investigations of the structure and the defects of the precursor layer will provide insights into the carrier scattering mechanisms and hence into the performance of graphene-based devices. Furthermore, we will identify reconstructions of the precursor layer that are particularly suitable as templates for the assembly of regular arrays of nanostructures such as fullerenes, metallic clusters, and functional molecules. Aspects of this work will be presented in recently developed courses at Colorado School of Mines and Brown University. The investigators will be actively involved in career advising and student mentorship, and will use the results of this research to enhance the experiences of K-12 mathematics teachers and high-school students under the outreach program of the Materials Research Science and Engineering Center at Brown.

石墨烯是一种碳原子的单层，即使在室温下，也会在微米的尺度上表现出无耗散的电导传导。因此，石墨烯可以在基于硅的设备达到其自然局限性的时候，使纳米电子学的微型化趋势延续。然而，对石墨烯片面积和质量的控制仍然是一个主要挑战，因为它们的形态既取决于原子尺度现象，又由长期的表面特征弹性相互作用来确定。碳化硅上石墨烯生长的实验表明，生长大而光滑的石墨烯片的关键在于控制前体层的结构，即石墨烯和底物之间的界面。为了实现我们控制石墨烯片质量的主要目标，我们提出了一种多尺度方法，该方法将表面表征的实验技术与原子尺度计算，用于查找表面结构的遗传算法以及成核模型的遗传算法和生长模型相结合。成功的这项工作将指导新颖的方法来生长大而光滑的石墨烯片，通过光刻图案可用于制造低功耗的纳米电子设备。我们对前体层的结构和缺陷的研究将提供有关载体散射机制的见解，从而对基于石墨烯的设备的性能进行洞察力。此外，我们将确定前体层的重建，这些重建是特别适合用于组装纳米结构的常规阵列（例如富勒烯，金属簇和功能分子）的模板。这项工作的各个方面将在科罗拉多州矿业和布朗大学最近开发的课程中介绍。调查人员将积极参与职业咨询和学生指导，并将利用本研究的结果来增强Brown材料研究科学与工程中心的外展计划，以增强K-12数学老师和高中生的经验。