Ultraviolet electroabsorption modulators based on III-nitride quantum wells

基于III族氮化物量子阱的紫外电吸收调制器

• 批准号: 0725786
• 负责人: Theodore Moustakas
• 金额: $ 29.43万
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-01 至 2010-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725786&HistoricalAwards=false
• 关键词: Ultraviolet; electroabsorption; modulators; based; III

ECCS-0725786Theodore MoustakasBoston UniversityIntellectual merit: This project is aimed at the development of semiconductor optical modulators operating at ultraviolet wavelengths, a family of devices that is currently quite underdeveloped and that has important applications in areas such as non-line-of-sight free-space optical communications, sensing and spectroscopy, and Q-switched pulsed lasers. Recently the investigators have demonstrated a strong electro-optic response at ultraviolet wavelengths based on the quantum-confined Stark effect in GaN/AlGaN quantum wells. Building on these results, the proposed research will address the quantum-well design and device geometry ? including the development of quasi-waveguide and asymmetric-Fabry-Perot modulators ? to optimize key modulator parameters such as contrast ratio, on-state losses, drive voltage, and bandwidth. In addition the investigators plan to demonstrate electroabsorption modulators based on polarization rotation in A-plane GaN/AlGaN quantum wells, where the large in-plane anisotropy of the crystal structure can be exploited to obtain very large single-pass contrast ratios. Finally, the high-speed properties of these devices will be investigated. Broader impacts: The proposed activities will promote education through the training of students in a wide range of disciplines, including quantum-well engineering, semiconductor epitaxial growth, ultraviolet and high-speed optoelectronic device fabrication and testing. To increase the effectiveness and scope of this program, the involvement of undergraduates and high-school interns will be emphasized. A journal club and associated website are also planned to further contribute to the dissemination and exchange of ideas in the important field of III-nitride optoelectronics. Furthermore, the proposed research will lead to the development of novel devices that will expand the realm of applications of ultraviolet optoelectronics, e.g. for optical communications, spectroscopy, and sensing. More in general, this work will advance the state of knowledge in the area of nitride heterostructures (particularly with regards to the fabrication of quantum wells on non-traditional substrate planes and of distributed Bragg reflectors), thereby benefiting other device applications of these materials.

ECCS-0725786Theodore Moustakas波士顿大学智力优势：该项目旨在开发在紫外波长下工作的半导体光调制器，这是目前开发不足的一系列器件，在非视距自由光等领域具有重要应用。空间光通信、传感和光谱学以及调Q脉冲激光器。 最近，研究人员基于 GaN/AlGaN 量子阱中的量子限制斯塔克效应，展示了在紫外波长下的强烈电光响应。 基于这些结果，拟议的研究将解决量子阱设计和器件几何形状？包括准波导和非对称法布里-珀罗调制器的开发？优化关键调制器参数，例如对比度、通态损耗、驱动电压和带宽。 此外，研究人员计划在 A 面 GaN/AlGaN 量子阱中演示基于偏振旋转的电吸收调制器，其中可以利用晶体结构的大面内各向异性来获得非常大的单通对比度。 最后，将研究这些器件的高速特性。 更广泛的影响：拟议的活动将通过对学生进行广泛学科的培训来促进教育，包括量子阱工程、半导体外延生长、紫外线和高速光电器件制造和测试。 为了提高该计划的有效性和范围，将强调本科生和高中实习生的参与。 还计划建立期刊俱乐部和相关网站，以进一步促进 III 氮化物光电子学重要领域的思想传播和交流。 此外，拟议的研究将导致新型设备的开发，从而扩大紫外光电子学的应用领域，例如紫外光电子学。用于光通信、光谱学和传感。 更一般地说，这项工作将推进氮化物异质结构领域的知识水平（特别是在非传统衬底平面上的量子阱和分布式布拉格反射器的制造），从而有利于这些材料的其他器件应用。