Growth of Diamond and Cubic Boron Nitride Single Crystalline Films

金刚石和立方氮化硼单晶薄膜的生长

• 批准号: 9014370
• 负责人: Theodore Moustakas
• 金额: --
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-07-15 至 1994-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9014370&HistoricalAwards=false
• 关键词: Growth; Diamond; Cubic; Boron; Nitride

This project on "Growth of Diamond and Cubic Boron Nitride Single Crystalline Films" addresses experimental and theoretical aspects of epitaxial crystal growth. The homoepitaxial growth of diamond films on different crystallographic surfaces of diamond substrates will be studied using electron cyclotron resonance assisted molecular beam epitaxy. The role of atomic hydrogen in stabilizing certain surface reconstructions and in removing graphitic co- deposits will be investigated, as well as electron and ion assisted growth and doping phenomena. Transport, optical, and recombination properties of the epitaxial films will be characterized. Defects will be studied by electron spin resonance, cathodoluminesence, and Raman spectroscopy, and correlations between defect concentration and growth rate will be investigated. The results of these fundamental studies are of importance to the potential use of diamond and boron nitride in electronic applications with capabilities beyond silicon-based electronics enabling improved device and circuit performance, and extending electronic/photonic applications to new areas such as sensor and processor utilization in the high temperature environments of automobile and jet engines, and for process control in manufacturing.

这个关于“金刚石和立方氮化硼单晶薄膜的生长”的项目解决了外延晶体生长的实验和理论方面的问题。将利用电子回旋共振辅助分子束外延技术研究金刚石薄膜在金刚石基底的不同晶体表面上的同质外延生长。将研究原子氢在稳定某些表面重建和去除石墨共沉积方面的作用，以及电子和离子辅助生长和掺杂现象。将表征外延膜的传输、光学和复合特性。将通过电子自旋共振、阴极发光和拉曼光谱研究缺陷，并研究缺陷浓度和生长速率之间的相关性。这些基础研究的结果对于金刚石和氮化硼在电子应用中的潜在用途具有重要意义，这些应用具有超越硅基电子的功能，可改善设备和电路性能，并将电子/光子应用扩展到传感器和处理器利用等新领域汽车和喷气发动机的高温环境以及制造过程控制。