CAREER: Error Power and Reliability for Nano-Silicon and Beyond

职业：纳米硅及其他领域的误差功率和可靠性

• 批准号: 0639624
• 负责人: Sanjukta Bhanja
• 金额: $ 40万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-04-15 至 2014-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0639624&HistoricalAwards=false
• 关键词: CAREER; Error; Power; Reliability; Nano

Proposal ID: 0639624Title: Error Power and Reliability for Nano-Silicon and BeyondPI: Sanjukta BhanjaInstitution: University of South FloridaABSTRACT:Over the years, the underlying design philosophy of electronic design and analysis tools has undergone paradigm shifts from area optimization to timing optimization to power optimization and now is shifting to reliability-centric design optimization. Understanding of the interplay between errors, power dissipation in a chip with its associated side effects, and reliability problems will be the key to commercial success of sub-30nm silicon and nonsilicon technologies. It is expected that statistical theories and probabilistic methods will play significant role in the design of such reliability-centric CAD tools. In this context, the career research goal of the PI is to construct reliability-centric design and analysis tools for the inter-coupled issues of error, power and redundancy for nano-CMOS and other emerging nano-devices, such as quantum-dot cellular automata. There are two main thrusts : one in medium term problems and the other in long term problems. First, in the medium term category are problems related to nano-CMOS for which the PI will research reliability-centric design optimization and analysis tools at logic level for error, power, and reliability of nano-CMOS, taking into account process variability and circuit topology. These models would allow probabilistic abstraction of technology-dependent parameters, such as device characteristics, process parameter variations, and thermal issues, in addition to, structural dependencies among the interconnected components and input uncertainties. In the long term category are problems in novel computing paradigms using emerging nano-devices such as field-coupled computing architectures using quantum-dot cellular automata. The basic issues considered will still be the same, i.e. error, power, and reliability; however, the modeling of these will be driven by the physics of these devices to a larger extent than nano-CMOS. The career teaching goals of the PI spans traditional pedagogic activities, such as developing new courses, and educational research related to VLSI education, such as testing the hypotheses that (a) active learning, based on sensory mode of a student, or (b) "Learning by doing" promotes deeper understanding of VLSI concepts.

提案 ID：0639624 标题：纳米硅及其他领域的误差功耗和可靠性 PI：Sanjukta Bhanja 机构：南佛罗里达大学 摘要：多年来，电子设计和分析工具的基本设计理念经历了从面积优化到时序优化再到功耗的范式转变优化，现在正在转向以可靠性为中心的设计优化。了解错误、芯片功耗及其相关副作用和可靠性问题之间的相互作用将是 30 纳米以下硅和非硅技术取得商业成功的关键。预计统计理论和概率方法将在此类以可靠性为中心的 CAD 工具的设计中发挥重要作用。在此背景下，PI的职业研究目标是构建以可靠性为中心的设计和分析工具，以解决纳米CMOS和其他新兴纳米器件（例如量子点蜂窝器件）的误差、功率和冗余的相互耦合问题。自动机。主要有两个重点：一是中期问题，二是长期问题。首先，中期类别是与纳米 CMOS 相关的问题，PI 将针对纳米 CMOS 的错误、功耗和可靠性研究以可靠性为中心的逻辑级设计优化和分析工具，同时考虑工艺可变性和电路拓扑。这些模型将允许对技术相关参数进行概率抽象，例如器件特性、工艺参数变化和热问题，以及互连组件之间的结构依赖性和输入不确定性。从长远来看，使用新兴纳米设备的新型计算范式中存在问题，例如使用量子点元胞自动机的场耦合计算架构。考虑的基本问题仍然是相同的，即错误、功率和可靠性；然而，与纳米 CMOS 相比，这些器件的建模将在更大程度上由这些器件的物理特性驱动。 PI 的职业教学目标涵盖传统的教学活动，例如开发新课程和与 VLSI 教育相关的教育研究，例如测试以下假设：(a) 基于学生感官模式的主动学习，或 (b) “边做边学”有助于更深入地理解 VLSI 概念。