CAREER: Error Power and Reliability for Nano-Silicon and Beyond

职业：纳米硅及其他领域的误差功率和可靠性

• 批准号: 0639624
• 负责人: Sanjukta Bhanja
• 金额: $ 40万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-04-15 至 2014-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0639624&HistoricalAwards=false
• 关键词: CAREER; Error; Power; Reliability; Nano

Proposal ID: 0639624Title: Error Power and Reliability for Nano-Silicon and BeyondPI: Sanjukta BhanjaInstitution: University of South FloridaABSTRACT:Over the years, the underlying design philosophy of electronic design and analysis tools has undergone paradigm shifts from area optimization to timing optimization to power optimization and now is shifting to reliability-centric design optimization. Understanding of the interplay between errors, power dissipation in a chip with its associated side effects, and reliability problems will be the key to commercial success of sub-30nm silicon and nonsilicon technologies. It is expected that statistical theories and probabilistic methods will play significant role in the design of such reliability-centric CAD tools. In this context, the career research goal of the PI is to construct reliability-centric design and analysis tools for the inter-coupled issues of error, power and redundancy for nano-CMOS and other emerging nano-devices, such as quantum-dot cellular automata. There are two main thrusts : one in medium term problems and the other in long term problems. First, in the medium term category are problems related to nano-CMOS for which the PI will research reliability-centric design optimization and analysis tools at logic level for error, power, and reliability of nano-CMOS, taking into account process variability and circuit topology. These models would allow probabilistic abstraction of technology-dependent parameters, such as device characteristics, process parameter variations, and thermal issues, in addition to, structural dependencies among the interconnected components and input uncertainties. In the long term category are problems in novel computing paradigms using emerging nano-devices such as field-coupled computing architectures using quantum-dot cellular automata. The basic issues considered will still be the same, i.e. error, power, and reliability; however, the modeling of these will be driven by the physics of these devices to a larger extent than nano-CMOS. The career teaching goals of the PI spans traditional pedagogic activities, such as developing new courses, and educational research related to VLSI education, such as testing the hypotheses that (a) active learning, based on sensory mode of a student, or (b) "Learning by doing" promotes deeper understanding of VLSI concepts.

提案ID：0639624TITLE：纳米 - 硅和BeyondPI的错误功率和可靠性：Sanjukta Bhanjainstituction：南部佛罗里达大学的ABSTRACTION：多年来，电子设计和分析工具的基本设计哲学的基础设计哲学始终是从区域优化到启动时的范围，并且现在是启动的范围，并且现在是启动的，现在是Shefting of Power Interivion-shs shs shs sh shs shss shs sh shs shss sh shs shss shs shs shs shs shs shs shsift shift shift s shift s shifting。了解错误之间的相互作用，与其相关副作用的芯片中的功率耗散以及可靠性问题将是硅基硅和非硅技术的商业成功的关键。预计统计理论和概率方法将在此类以可靠性为中心的CAD工具的设计中发挥重要作用。在这种情况下，PI的职业研究目标是为纳米-CMOS和其他新兴纳米磁性设备（例如量子点蜂窝电池）构建以可靠性为中心的设计和分析工具。有两个主要的推力：一个在中期问题中，另一个在长期问题中。首先，在中期类别中，是与纳米-CMO有关的问题，PI将在逻辑级别研究以可靠性的设计优化和分析工具，以考虑过程的变异性和电路拓扑，以确保错误，功率和纳米-CMO的可靠性。这些模型将允许依赖技术依赖性参数的概率抽象，例如设备特征，过程参数变化和热问题，除了互连组件和输入不确定性之间的结构依赖性外。在长期类别中，使用新兴的纳米驱动器（例如使用量子点蜂窝蜂窝自动机）进行新的计算范式中的问题。所考虑的基本问题仍然相同，即错误，权力和可靠性；但是，与纳米-CMO相比，这些设备的物理学的建模将由这些设备的物理学驱动。 PI的职业教学目标涵盖了传统的教学活动，例如开发新课程和与VLSI教育有关的教育研究，例如测试（a）基于学生感官模式的积极学习的假设，或（b）“通过进行“通过进行”学习“促进对VLSI概念的更深入了解。