Studies of the Electron Injection-Induced Effects in III-Nitride Device Structures

III 族氮化物器件结构中电子注入诱导效应的研究

• 批准号: 0422604
• 负责人: Leonid Chernyak
• 金额: $ 21万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-08-15 至 2008-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0422604&HistoricalAwards=false
• 关键词: Studies; Electron; Injection; Induced; Effects

The starting point of this project is the PI's recent findings that electron injection into p-type GaN leads to considerable changes in the material's electronic properties, in particular longer minority carrier diffusion length. The intellectual merit of this three-year project is in exploration of the novel electron injection-induced effects in the wide range of p-type Mg-doped AlxGa1-xN (x 0.35) and AlxGa1-xN/GaN superlattices. In addition, the electron injection effects in III-Nitrides doped with impurities other than Mg (manganese or iron, for example) and III-N alloys and superlattices other than AlxGa1-xN and AlxGa1-xN/GaN (InxGa1-xN and InxGa1-xN/GaN, for example) will be studied. To fully understand the novel electron injection-induced effects and to achieve control over device performance, systematic electrical and optical studies will be carried out in the representative range of III-Nitride-based structures. Electrical measurements, which include Deep Level Transient Spectroscopy and Electron Beam Induced Current, will be performed before and after electron injection. These measurements will be complemented with cathodoluminescence, photoresponse, as well as photoconductivity measurements able to provide critical information on optical and optoelectronic properties. The broader impact of this project is in integration of research and education at the graduate and undergraduate levels as well as in partnership with industry (SVT Associates). Two other aspects of the project's broader impact are in participation of a female Ph.D. student and undergraduates from a Historically Black (Bethune-Cookman) College in the proposed research. Finally, the international dimension of the project is in close collaboration of the PI with a group at the Walter Schottky Institute of Munich Technical University in Germany. The practical significance of this research is in long-term, several-fold enhancement of quantum efficiency for III-Nitride ultra-violet detectors. This is because the increased diffusion length improves minority carrier collection and eliminates the "dead space" where carriers recombine before they are collected.

该项目的起点是PI最近的发现，即电子注入P型GAN会导致材料的电子特性，特别是较长的少数载体扩散长度的变化。这个为期三年的项目的智力优点是探索了新型电子注射诱导的效果，在P型MG掺杂的Alxga1-XN（X 0.35）和Alxga1-XN/GAN/GAN超级晶格中。此外，除Mg（例如锰或铁）掺杂的III二硝酸盐中的电子注射作用，以及除Alxga1-Xn和Alxga1-Xn/Gan以外的III-N合金和超晶格（INXGA1-XN/GAN）例如，将研究XN/GAN）。为了充分了解新型的电子注入诱导的效果并控制了对设备性能的控制，将在代表性的基于III二硝酸盐的结构中进行系统的电气和光学研究。电子测量包括在电子注入之前和之后进行的，其中包括深级瞬态光谱和电子束感应电流。这些测量结果将与阴极发光，光响应以及光电导率测量值相辅相成，能够提供有关光学和光电特性的关键信息。该项目的广泛影响是研究生和本科级别的研究和教育以及与行业（SVT Associates）合作的整合。该项目更广泛影响的其他两个方面是女性博士学位的参与。在拟议的研究中，来自历史悠久的黑人（Bethune-Cookman）学院的学生和大学生。最后，该项目的国际维度是与德国慕尼黑技术大学的沃尔特·肖特基研究所（Walter Schottky Institute of Derman）的一个小组密切合作。 这项研究的实际意义是长期的，III氮化物超紫罗兰探测器的量子效率的数量增强。这是因为增加的扩散长度改善了少数载体的收集，并消除了载体在收集之前重新组合的“死空间”。