SBIR Phase I: Vertical EML Source for High-Speed Interconnects

SBIR 第一阶段：用于高速互连的垂直 EML 源

• 批准号: 0339336
• 负责人: Majid Riaziat
• 金额: $ 9.94万
• 依托单位: OEPIC SEMICONDUCTORS, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-01 至 2004-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0339336&HistoricalAwards=false
• 关键词: SBIR; Phase; Vertical; EML; Source

This Small Business Innovation Research (SBIR) Phase I project proposes to demonstrate technical feasibility of a high-speed Vertical Electro-absorptive Modulated Laser (V-EML) for high-speed interconnects. This novel technology is built on the VCSEL (Vertical Cavity Surface Emitting Laser) concept and has all of its nominal advantages such as low-power consumption, on-wafer testability, and possibility of two-dimensional arrays. This technology should eliminate the complications associated with direct modulation of the VCSEL at high speeds. Modulation will be done externally by an electro-absorptive modulator that is integrated with the VCSEL either in a hybrid fashion or monolithically. This approach allows clean modulation without overshoot at speeds higher than 10 Gbps and easily reaching 40 Gbps. Furthermore, by decoupling the modulation issues from VCSEL emission, it provides additional design freedom for achieving extra stability, lower noise and higher reliability. This concept is expected to strongly impact the chip to chip and board to board interconnect industry by virtually removing modulation speed limit and minimizing signal distortion of the optical transmitter.Vertical laser sources in general have cost and size advantages over horizontal emitters in low to medium-power single-device applications. They also lend themselves more easily to two-dimensional array fabrication. The V-EML concept further removes the limitations of direct modulation from these devices. With external modulation, the V-EML can be driven by simpler electronics and at higher speeds. The application that this work is intended for is high-speed interconnects. This can either be in the form of backplane connections, distributed board-to-board connections or chip-to-chip optical interconnects (C2OI). VCSEL arrays known as "smart pixels" have been proposed and tested for such applications. A major impact of this technology is that it will help to remove the chip and board boundaries as significant obstacles to data transport, and will make possible truly distributed and scalable systems of the future. The high-speed interconnects optical communications market size is estimated to be more than $9 billion in 2010.

这项小型企业创新研究（SBIR）I阶段项目提议展示用于高速互连的高速垂直电气吸收调制激光（V-EML）的技术可行性。这项新型技术建立在VCSEL（垂直腔表面发射激光器）概念上，并具有其所有标称的优势，例如低功率消耗，磁力可检验性以及二维阵列的可能性。该技术应消除与高速调制VCSEL有关的并发症。调制将由电源调制器外部进行，该调制器以混合方式或单层整合的VCSEL进行。这种方法允许在不超过10 Gbps的速度下进行清洁调制，并容易达到40 Gbps。此外，通过将调制问题与VCSEL发射解耦，它为实现额外的稳定性，较低的噪声和更高的可靠性提供了额外的设计自由。预计该概念将通过实际上删除调制速度限制并最大程度地减少光学发射器的信号失真，从而强烈影响芯片对芯片和董事会的登机行业。逆向激光源通常在低至中等动力的单位设备应用中具有成本和尺寸优势。它们还更容易地借给二维阵列制造。 V-EML概念进一步消除了这些设备直接调制的局限性。通过外部调制，V​​-EML可以由更简单的电子设备和更高的速度驱动。此工作的应用是高速互连。这可以是背板连接，分布式板到板连接的形式，也可以是芯片到芯片光学互连（C2OI）的形式。已提出并测试了称为“智能像素”的VCSEL阵列。这项技术的主要影响是，它将有助于消除芯片和板界作为数据传输的重要障碍，并使未来的真正分布和可扩展系统成为可能。高速互连的光通信市场规模估计在2010年超过90亿美元。