Microwave and Radio Frequency Rapid Electromagnetic Induction Heating (EMIH) of Silicon Wafers

硅片的微波和射频快速电磁感应加热 (EMIH)

• 批准号: 0200120
• 负责人: John Booske
• 金额: $ 30万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-04-15 至 2006-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0200120&HistoricalAwards=false
• 关键词: Microwave; Radio; Frequency; Rapid; Electromagnetic

The need to reduce the thermal budgets (time, temperature) of next generation semiconductor device processing has created a significant interest in short-term rapid thermal processing (RTP) of silicon. One of the most important applications for RTP is the formation of the source and drain regions of CMOS gate stacks. Another application is the bonding of wafers for fabrication of micromechanical and power microelectronic devices. This proposal requests support for basic research of microwave and radio frequency (RF) rapid electromagnetic induction heating (EMIH) of Si. EMIH would provide valuable and unique capabilities for wafer bonding. Moreover, EMIH may be the only viable method to anneal ultrashallow implanted impurity dopant regions to the specifications required to manufacture the next generation of high density VLSI integrated circuits (the so-called 100 nm technology node).The research program involves investigations of rapid microwave and RF EMIH of Si wafers. For example, initial data indicate that EMIH spike-annealing of ultra-shallow boron-implanted wafers is superior to conventional lamp RTP. Experiments with ultra-shallow boron-implanted wafers are proposed to establish just how effective EMIH RTP can be, and to elucidate the unconventional mechanisms responsible for the observed superior performance. Similarly, initial results indicate that EMIH enables very rapid wafer bonding without the need for intermediate glue layers. The research will more thoroughly determine the quality of the bond, the minimum time and temperature required to obtain a good bond, the prospects for multi-level wafer stack bonding, and the mechanisms that explain how uniformly strong bonds are obtained during RF EMIH, even with significant radial temperature gradients.Supporting collaborations with leading semiconductor fabrication industrial organizations will provide critical input to experimental design and results analysis, and valuable mentorship of students. These collaborations will also leverage grant resources by providing sources of ultrashallow implanted wafers and post-anneal characterization from institutions with unparalleled experience and expertise in this technology area.

减少下一代半导体设备处理的热预算（时间，温度）的需求引起了人们对硅短期快速热加工（RTP）的重大兴趣。 RTP最重要的应用之一是形成CMOS栅极堆栈的源和排水区域。另一个应用是晶圆的结合，用于制造微电机械和电源微电器设备。该提案要求支持微波和射频（RF）快速电磁诱导加热（EMIH）的基础研究。 EMIH将为晶圆粘结提供宝贵而独特的功能。此外，EMIH可能是唯一可将超浅糖植入杂质掺杂剂区域的可行方法，即生产下一代高密度VLSI集成电路所需的规格（所谓的100 nm技术节点）。该研究计划涉及对SI Wafers的快速Microwave和RF Emih的研究研究。例如，初始数据表明，超光硼植入的晶片的EMIH尖峰升空优于常规的灯RTP。提出了使用超弹硼植入晶片的实验来确定AMIH RTP的有效性，并阐明了导致观察到的出色性能的非常规机制。同样，初始结果表明，EMIH可以在不需要中间胶水层的情况下实现非常快速的晶圆粘合。这项研究将更彻底地确定债券的质量，获得良好纽带所需的最短时间和温度，多级晶圆堆栈粘结的前景以及解释在RF EMIH期间如何获得均匀牢固的纽带的机制，即使在径向温度较大的情况下，与领先的半教养者的合作能够分析了批判性的研究和批判性的实验，并提供了批判性的良好的合作和批判性的效果。这些合作还将通过提供超纯的晶圆和授予资源来利用赠款资源，并在该技术领域具有无与伦比的经验和专业知识的机构的吹式瓦金和授予资源。