SBIR Phase II: Ultra-Compact Driver Technology for Extending the Lifetime of High Power Laser Diode Arrays

SBIR 第二阶段：用于延长高功率激光二极管阵列使用寿命的超紧凑驱动器技术

• 批准号: 0109913
• 负责人: Rodney Petr
• 金额: $ 50万
• 依托单位: Science Research Laboratory Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-15 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109913&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Ultra; Compact

This Small Business Innovation Research (SBIR) Phase II project will develop compact, all-solid-state, pulsed drivers coupled with solid-state protection circuitry for powering laser diodes/diode arrays and increasing their reliability and lifetime. New high-current semiconductor switch technology will be coupled with proprietary new diode protection circuits featuring fault-mode detection and high-speed current limiting to extend laser diode lifetime tenfold. This leads directly to a tenfold reduction in annual laser operating cost. Recent breakthroughs in high power semiconductor technology, namely the Gate Commutated Thyristor (GCT) switch, also offer significant improvement in speed, power, and compact size over existing commercial devices. Phase II will develop advanced, compact pulsed power modules based on these technologies. GCT technology, coupled with a proprietary fast protection circuitry, offers a significant decrease in diode laser system size and weight and a tenfold decrease in laser cost-of-ownership made possible by increased diode lifetime. New commercial applications for the diode-pumped solid-state lasers are expected to include powering diodes for optical telecommunications and ultraviolet and X-ray point sources for Next Generation Lithography in the semiconductor industry, as well as in laser cutting and welding. Medical uses for this new fault-protected, solid-state driver technology will include oncology and gene therapy.

这项小型企业创新研究（SBIR）II期项目将发展紧凑，全稳态的脉冲驱动器，再加上固态保护电路，以为激光二极管/二极管阵列供电，并提高其可靠性和寿命。 新的高电流半导体开关技术将与具有故障模式检测和高速电流限制的专有新二极管保护电路相结合，以扩展激光二极管寿命十倍。 这直接导致年度激光工作成本减少十倍。 高功率半导体技术的最新突破，即闸门持续晶闸管（GCT）开关，还可以显着改善速度，功率和紧凑型的大小，而不是现有的商业设备。 第二阶段将基于这些技术发展高级，紧凑的脉冲功率模块。 GCT技术，再加上专有的快速保护电路，可显着降低二极管激光系统的大小和重量，并通过增加二极管寿命增加了激光持有量的十倍降低。 预计二极管固态激光器的新商业应用包括用于光学电信的二极管，紫外线和X射线点源，用于半导体行业的下一代光刻源，以及激光切割和焊接。 这种新的受断层保护的固态驱动器技术的医疗用途将包括肿瘤学和基因疗法。