SBIR Phase I: Ultra-Compact Driver Technology for Extending the Lifetime of High Power Laser Diode Arrays

SBIR 第一阶段：用于延长高功率激光二极管阵列使用寿命的超紧凑驱动器技术

• 批准号: 9960084
• 负责人: Rodney Petr
• 金额: $ 10万
• 依托单位: Science Research Laboratory Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960084&HistoricalAwards=false
• 关键词: SBIR; Phase; Ultra; Compact; Driver

This Small Business Innovation Research Phase I project is to develop compact, all-solid-state drivers for powering laser diode arrays and thereby increase their lifetime. New ultra-high-current semiconductor switch technology will be coupled with new proprietary diode protection circuits to extend diode laser lifetime tenfold. This leads directly to a tenfold reduction in annual laser operating cost. Recent breakthroughs in high power semiconductor technology, namely the GCT (Gate Commutated Thyristor) switch, also offer a tenfold improvement in speed and power over existing commercial devices. SRL (Science Research Laboratory ) proposes to develop an advanced, compact pulsed power module based on these technologies that has the power, speed and protection circuitry needed to reliably drive high power laser diode arrays. This GCT-based power conditioning technology offers the improvements in system compactness, reliability and lifetime that are essential to the economic viability of laser diode arrays for many new commercial applications. GCT technology coupled with proprietary SRL fast protection circuitry offers a tenfold decrease in diode laser array size and weight and a tenfold increase in diode lifetime. This new technology is also essential to developing the pulsed power required for critical medical applications including new and improved methods of detecting metastatic cancer and new cancer therapies now under development at SRL and at other laboratories.

该小型企业创新研究第一阶段项目旨在开发紧凑型全固态驱动器，为激光二极管阵列供电，从而延长其使用寿命。 新的超高电流半导体开关技术将与新的专有二极管保护电路相结合，将二极管激光器的使用寿命延长十倍。 这直接导致年度激光运营成本降低十倍。高功率半导体技术的最新突破，即 GCT（门极换流晶闸管）开关，其速度和功率比现有商用设备提高了十倍。 SRL（科学研究实验室）提议基于这些技术开发一种先进、紧凑的脉冲功率模块，该模块具有可靠驱动高功率激光二极管阵列所需的功率、速度和保护电路。 这种基于 GCT 的功率调节技术提高了系统的紧凑性、可靠性和使用寿命，这对于许多新商业应用的激光二极管阵列的经济可行性至关重要。 GCT 技术与专有的 SRL 快速保护电路相结合，可将二极管激光器阵列的尺寸和重量减少十倍，并将二极管寿命延长十倍。 这项新技术对于开发关键医疗应用所需的脉冲功率也至关重要，这些应用包括检测转移性癌症的新方法和改进方法以及 SRL 和其他实验室目前正在开发的新癌症疗法。