SBIR Phase II: Novel Electric Field Probe for High-Speed Integrated Circuits and Semiconductor Devices

SBIR 第二阶段：用于高速集成电路和半导体器件的新型电场探针

• 批准号: 0091454
• 负责人: Daniel Kane
• 金额: $ 50万
• 依托单位: Southwest Sciences Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-04-01 至 2003-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0091454&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Novel; Electric

This Small Business Innovation Research (SBIR) Phase II project will develop a prototype high speed, non-invasive, optical probe for electric fields, and hence waveforms, in semiconductor devices. The technique is designed to work on any semiconductor regardless of its crystal structure and can be used for both imaging and single point detection without degradation of temporal resolution. Because the technique is optically based, no parasitic capacitance is added to the device being measured. A femtosecond laser probes the device to be measured, and temporal resolution is several orders of magnitude faster than the time resolution required to probe present devices. Bandwidths of greater than 10 terahertz should be possible.This non-invasive probe technique will be applied to silicon-based devices. In their production and testing in the semiconductor industry.

这个小型企业创新研究 (SBIR) 第二阶段项目将开发一种原型高速、非侵入式光学探头，用于半导体器件中的电场，从而产生波形。 该技术设计用于任何半导体，无论其晶体结构如何，并且可用于成像和单点检测，而不会降低时间分辨率。 由于该技术是基于光学的，因此不会向被测设备添加寄生电容。 飞秒激光探测待测量的设备，时间分辨率比探测现有设备所需的时间分辨率快几个数量级。 大于 10 太赫兹的带宽应该是可能的。这种非侵入式探针技术将应用于硅基设备。 在半导体行业的生产和测试中。