SBIR Phase I: Novel Electric Field Probe for High-Speed Integrated Circuits and Semiconductor Devices

SBIR 第一阶段：用于高速集成电路和半导体器件的新型电场探针

基本信息

批准号：
9960557
负责人：
Daniel Kane
金额：
$ 10万
依托单位：
Southwest Sciences Inc
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2000
资助国家：
美国
起止时间：
2000-01-01 至 2000-06-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960557&HistoricalAwards=false
关键词：
SBIR Phase Novel Electric Field

项目摘要

This Small Business Innovation Research Phase I project will develop a novel electro-optic method for noninvasively probing electric fields, and hence waveforms, in integrated circuits without external probes. The technique will work on any semiconductor regardless of its crystal structure, and can be used for both imaging and single point detection without degradation of temporal resolution. Because the technique is optically based, no parasitic capacitance is added to the device being measured. A femtosecond laser probes the device to be measured; thus the technique's temporal resolution is several orders of magnitude faster than the time resolution required to probe present devices. Since silicon MOSFET technology is the dominant technology used in logic and memory devices, it is important to develop noninvasive techniques that work on silicon-based devices. This method for measuring the electric fields present in semiconductor devices will be effective on silicon as well as any other semiconductor. The benefit to industry, government, and academia will be enormous, allowing integrated circuits to be probed and p-n junctions to be studied and imaged. Commercial applications of the proposed research include the development of techniques for studying semiconductor devices, and the development of instrumentation to measure electronic waveforms in integrated circuits noninvasively. Such instrumentation could be used to diagnose problems in integrated circuits during development, on production lines, and in circuit boards.

这个小型企业创新研究第一阶段项目将开发一种新型电光方法，用于无创地探测集成电路中的电场，从而探测波形，无需外部探头。该技术适用于任何半导体，无论其晶体结构如何，并且可用于成像和单点检测，而不会降低时间分辨率。由于该技术是基于光学的，因此不会向被测设备添加寄生电容。飞秒激光探测待测设备；因此，该技术的时间分辨率比探测现有设备所需的时间分辨率快几个数量级。由于硅 MOSFET 技术是逻辑和存储器件中使用的主导技术，因此开发适用于硅基器件的非侵入性技术非常重要。这种测量半导体器件中电场的方法对于硅以及任何其他半导体都有效。这对工业界、政府和学术界的好处将是巨大的，可以探测集成电路、研究 p-n 结并对其进行成像。所提议研究的商业应用包括开发半导体器件研究技术以及开发用于无创测量集成电路中电子波形的仪器。此类仪器可用于诊断集成电路开发过程中、生产线上和电路板中的问题。